TSM60N750 TSC | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 7
Technical content
Features
- Super-Junction technology
- High performance due to small figure-of-merit
- High ruggedness performance
- High commutation performance Block Diagram N-Channel MOSFET Application
- Power Supply.
- Lighting
Ordering Information
Part No. Package Packing TSM60N750CH C5G TO-251 75pcs / Tube TSM60N750CP ROG TO-252 2.5kpcs / 13” Reel Note: “G” denotes for Halogen- and Antimony-free as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds Absolute Maximum Ratings (TA=25oC unless otherwise noted) Parameter Symbol Limit Unit IPAK/DPAK Drain-Source Voltage VDS 600 V Gate-Source Voltage VGS ±30 V Continuous Drain Current (Note 1) TC = 25oC ID 6 A Pulsed Drain Current (Note 2) IDM 18 A Total Power Dissipation @ TC=25oC PDTOT 62.5 W Single Pulsed Avalanche Energy (Note 3) EAS 90 mJ Single Pulsed Avalanche Current (Note 3) IAS 1.9 A Operating Junction and Storage Temperature Range TJ, TSTG - 55 to +150 oC Pin Definition: 1. Gate 2. Drain 3. Source
600V, 6A, 0.75Ω N-Channel Power MOSFET 2/7 Version: A14 Thermal Performance Parameter Symbol Limit Unit IPAK/DPAK Junction to Case Thermal Resistance RӨJC 2 oC/W Junction to Ambient Thermal Resistance RӨJA 62 oC/W Electrical Specifications (TJ=25oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static (Note 4) Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA BVDSS 600 -- -- V Gate Threshold Voltage VDS = VGS, ID = 250µA VGS(TH) 2 3 4 V Gate Body Leakage VGS = ±30V, VDS = 0V IGSS -- -- ±100 nA Zero Gate Voltage Drain Current VDS = 600V, VGS = 0V IDSS -- -- 1 µA Drain-Source On-State Resistance VGS = 10V, ID = 3A RDS(ON) -- 0.53 0.75 Ω Dynamic (Note 5) Total Gate Charge VDS = 380V, ID = 6A, VGS = 10V Qg -- 10.8 -- nC Gate-Source Charge Qgs -- 2.7 -- Gate-Drain Charge Qgd -- 3.7 -- Input Capacitance VDS = 100V, VGS = 0V, f = 1.0MHz Ciss -- 554 -- pF Output Capacitance Coss -- 46 -- Gate Resistance f=1MHz, open drain Rg -- 2.7 -- Ω Switching (Note 6) Turn-On Delay Time VDD = 380V, RGEN = 25Ω, ID = 6A, VGS = 10V, td(on) -- 17.3 -- ns Turn-On Rise Time tr -- 22 -- Turn-Off Delay Time td(off) -- 28 -- Turn-Off Fall Time tf -- 22 -- Source-Drain Diode (Note 4) Forward On Voltage IS=6A, VGS=0V VSD -- -- 1.4 V Reverse Recovery Time VR=200V, IS=3A dIF/dt=100A/μs trr -- 182 -- ns Reverse Recovery Charge Qrr -- 1.3 -- μC Notes: 1. Current limited by package 2. Pulse width limited by the maximum junction temperature 3. L=50mH, IAS=1.9A, VDD=50V, RG=25Ω, Starting TJ=25oC 4. Pulse test: PW ≤ 300µs, duty cycle ≤ 2% 5. For DESIGN AID ONLY, not subject to production testing. 6. Switching time is essentially independent of operating temperature.
600V, 6A, 0.75Ω N-Channel Power MOSFET 3/7 Version: A14 Electrical Characteristics Curves Output Characteristics Transfer Characteristics On-Resistance vs. Drain Current Gate-Source Voltage vs. Gate Charge On-Resistance vs. Junction Temperature Source-Drain Diode Forward Current vs. Voltage
600V, 6A, 0.75Ω N-Channel Power MOSFET 4/7 Version: A14 Electrical Characteristics Curves Capacitance vs. Drain-Source Voltage BVDSS vs. Junction Temperature Maximum Safe Operating Area (DPAK/IPAK) Normalized Thermal Transient Impedance, Junction-to-Case (DPAK/IPAK) Normalized Effective Transient Thermal Impedance Square Wave Pulse Duration (s) Duty=0.5 Duty=0.2 Duty=0.1 Duty=0.05 Duty=0.02 Duty=0.01 Single pulse
600V, 6A, 0.75Ω N-Channel Power MOSFET 5/7 Version: A14 TO-251 (IPAK) Mechanical Drawing Unit: Millimeters Marking Diagram Y = Year Code M = Month Code for Halogen Free Product (O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep, X=Oct, Y=Nov, Z=Dec) L = Lot Code
600V, 6A, 0.75Ω N-Channel Power MOSFET 6/7 Version: A14 TO-252 (DPAK) Mechanical Drawing Unit: Millimeters Marking Diagram Y = Year Code M = Month Code for Halogen Free Product (O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep, X=Oct, Y=Nov, Z=Dec) L = Lot Code
600V, 6A, 0.75Ω N-Channel Power MOSFET 7/7 Version: A14 Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product descrip tion only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implie d warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown her ein are not designed for use in medical, life -saving, or life -sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale.