TSM60N06_15 TSC | Alldatasheet

Document overview

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Technical content

Features

  • Advanced Trench Technology
  • Low RDS(ON) 7.3mΩ (Max.)
  • Low gate charge typical @ 81nC (Typ.)
  • Low Crss typical @ 339pF (Typ.) Block Diagram N-Channel MOSFET

Ordering Information

Part No. Package Packing TSM60N06CP ROG TO-252 2.5Kpcs / 13” Reel Note: “G” denote for Halogen Free Product Absolute Maximum Rating (TC = 25℃ unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V Continuous Drain Current TC = 25℃ ID A TC = 70℃ 53 TA = 25℃ 13 TA = 70℃ 10 Drain Current-Pulsed Note 1 IDM 150 A Avalanche Current, L = 0.1mH IAS, IAR 53 A Avalanche Energy, L = 0.1mH EAS, EAR 400 mJ Maximum Power Dissipation TC = 25℃ PD 44.6 W TC = 70℃ 28.6 TA = 25℃ 2 TA = 70℃ 1.3 Storage Temperature Range TSTG -55 to +150 ℃ Operating Junction Temperature Range TJ -55 to +150 ℃ * Limited by maximum junction temperature Thermal Performance Parameter Symbol Limit Unit Thermal Resistance - Junction to Case RӨJC 2.8 ℃/W Thermal Resistance - Junction to Ambient RӨJA 62 ℃/W Pin Definition: 1. Gate 2. Drain 3. Source

60V N-Channel Power MOSFET 2/4 Version: A12 Electrical Specifications (TC = 25℃ unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage VGS = 0V, ID = 250uA BVDSS 60 -- -- V Drain-Source On-State Resistance VGS = 10V, ID = 30A RDS(ON) -- 6.3 7.3 mΩ Gate Threshold Voltage VDS = VGS, ID = 250uA VGS(TH) 2 3 4 V Zero Gate Voltage Drain Current VDS = 48V, VGS = 0V IDSS -- -- 1 uA Gate Body Leakage VGS = ±20V, VDS = 0V IGSS -- -- ±100 nA Dynamic Total Gate Charge VDS = 30V, ID = 30A, VGS = 10V Qg -- 81 -- nC Gate-Source Charge Qgs -- 23 -- Gate-Drain Charge Qgd -- 24 -- Input Capacitance VDS = 30V, VGS = 0V, f = 1.0MHz Ciss -- 4382 -- pF Output Capacitance Coss -- 668 -- Reverse Transfer Capacitance Crss -- 339 -- Switching Turn-On Delay Time VGS = 10V, VDS = 30V, RG = 3.3Ω, ID = 30A td(on) -- 25 -- nS Turn-On Rise Time tr -- 19 -- Turn-Off Delay Time td(off) -- 85 -- Turn-Off Fall Time tf -- 43 -- Drain-Source Diode Characteristics and Maximum Rating Drain-Source Diode Forward Voltage VGS = 0V, IS = 20A VSD - 0.8 1.3 V Reverse Recovery Time IS = 30A, TJ = 25 ℃ dI/dt = 100A/us tfr 36 nS Reverse Recovery Charge Qfr 53 nC Notes: 1. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 2. RθJA is the sum of the junction -to-case and case -to-ambient thermal resistance wher e the case thermal reference is defined as the solder mounting surface of the drain pins. R θJC is guaranteed by design while R θCA is determined by the user's board design. RθJA shown below for single device operation on FR-4 in still air

60V N-Channel Power MOSFET 3/4 Version: A12 TO-252 Mechanical Drawing TO-252 DIMENSION DIM MILLIMETERS INCHES MIN MAX MIN MAX A 2.286 BSC 0.090 BSC B 9.40 10.40 0.370 0.409 C 5.40 6.23 0.213 0.245 D 6.40 6.80 0.252 0.268 E 2.20 2.40 0.087 0.094 F 0.00 0.20 0.000 0.008 G 5.20 5.50 0.205 0.217 G1 0.50 0.91 0.020 0.036 H 0.45 0.60 0.018 0.024 H1 0.40 0.60 0.016 0.024 J 2.50 2.90 0.098 0.114 K 0.60 1.00 0.023 0.039 L 1.40 1.78 0.055 0.070 M 0.88 1.28 0.034 0.050

60V N-Channel Power MOSFET 4/4 Version: A12 Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC ’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life -saving, or life -sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale.