TSM60N03CP

TSM60N03CP VBSEMI | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 6

Technical content

FEATURES

/C0068TrenchFET/C0114 Power MOSFET /C0068175/C0095C Maximum Junction Temperature /C0068100% Rg Tested N-Channel 20-V (D-S)175 /C0095C MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (/C0087) ID (A)a 0.006 @ VGS = 4.5 V 65 0.008 @ VGS = 2.5 V 45 D G S N-Channel MOSFET TO-252 SGD Top View Drain Connected to Tab ABSOLUTE MAXIMUM RATINGS (TA = 25/C0095C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS /C003415 V Continuous Drain Currenta TC = 25/C0095C ID Continuous Drain Currenta TC = 100/C0095C ID A Pulsed Drain Current IDM 200 A Continuous Source Current (Diode Conduction)a IS 65 Maximum Power Dissipation TC = 25/C0095C PD WMaximum Power Dissipation TA = 25/C0095C PD 8.3b, c W Operating Junction and Storage Temperature Range TJ, Tstg -55 to 175 /C0095C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit b t /C0118 10 sec. 15 18 Maximum Junction-to-Ambientb Steady State RthJA 40 50 /C0095C/W Maximum Junction-to-Case RthJC 1.75 2.1 Notes a. Package Limited b. Surface Mounted on 1” x 1” FR4 Board c. t /C0118 10 sec E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw TSM60N03CP A ll data sheet.com

SPECIFICATIONS (TJ = 25/C0095C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typa Max Unit Static Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 /C0109A 20 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 /C0109A 0.5 V Gate-Body Leakage IGSS VDS = 0 V, VGS = /C003412 V /C0034100 nA Zero Gate Voltage Drain Current IDSS VDS = 20 V, VGS = 0 V 1 /C0109AZero Gate Voltage Drain Current IDSS VDS = 20 V, VGS = 0 V, TJ = 125/C0095C 50 /C0109A On-State Drain Currentb ID(on) VDS = 5 V, VGS = 4.5 V 65 A VGS = 4.5 V, ID = 20 A 0.0045 0.006 Drain-Source On-State Resistanceb rDS(on) VGS = 4.5 V, ID = 20 A, TJ = 125/C0095C 0.0055 0.007 /C0087DS(on) VGS = 2.5 V, ID = 20 A 0.006 0.008 Forward Transconductanceb gfs VDS = 5 V, ID = 40 A 20 S Dynamica Input Capacitance Ciss 3660 Output Capacitance Coss VGS = 0 V, VDS = 20 V, f = 1 MHz 730 pF Reverse Transfer Capacitance Crss 375 Total Gate Chargec Qg 26 35 Gate-Source Chargec Qgs VDS = 10 V, VGS = 4.5 V, ID = 40 A 5 nC Gate-Drain Chargec Qgd DS , GS , D Gate Resistance Rg 1 3.7 /C0087 Turn-On Delay Timec td(on) 20 35 Rise Timec tr VDD = 10 V, RL = 0.25 /C0087 120 190 ns Turn-Off Delay Timec td(off) VDD = 10 V, RL = 0.25 /C0087 ID /C0094 40 A, VGEN = 4.5 V, RG = 2.5 /C0087 45 70 ns Fall Timec tf 20 35 Source-Drain Diode Ratings and Characteristic (TC = 25/C0095C) Pulsed Current ISM 100 A Diode Forward Voltageb VSD IF = 100 A, VGS = 0 V 1.2 1.5 V Source-Drain Reverse Recovery Time trr IF = 40 A, di/dt = 100 A//C0109s 35 70 ns Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width /C0118 300 /C0109s, duty cycle /C0118 2%. c. Independent of operating temperature. 1.5 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw TSM60N03CP A ll data sheet.com

TYPICAL CHARACTERISTICS (25/C0095C UNLESS NOTED) 1000 2000 3000 4000 5000 04 8 1 2 1 6 2 0 0 1 02 03 04 05 06 07 0 100 120 0 2 04 06 08 0 1 0 0 0.000 0.003 0.006 0.009 0.012 0 2 04 06 08 0 1 0 0 100 100 02468 1 0 Output Characteristics Transfer Characteristics Capacitance Gate Charge Transconductance On-Resistance vs. Drain Current VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) - Drain Current (A)I D- Gate-to-Source Voltage (V) Qg - Total Gate Charge (nC) ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) C - Capacitance (pF) V GS VGS - Gate-to-Source Voltage (V) - Transconductance (S)g fs 25/C0095C -55/C0095C1 V TC = 125/C0095C VGS = 10 V ID = 40 A VGS = 4.5 thru 3 V 2.5 V VGS = 2.5 V Ciss Coss Crss TC = -55 /C0095C 25/C0095C 125/C0095C 2 V VGS = 4.5 V - On-Resistance (rDS(on) /C0087) - Drain Current (A)I D E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw TSM60N03CP A ll data sheet.com

TYPICAL CHARACTERISTICS (25/C0095C UNLESS NOTED) 0.0 0.4 0.8 1.2 1.6 2.0 -50 -25 0 25 50 75 100 125 150 175 On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage TJ - Junction Temperature (/C0095C) VSD - Source-to-Drain Voltage (V) - Source Current (A)I S 100 VGS = 4.5 V ID = 20 A TJ = 25/C0095C TJ = 150/C0095C (Normalized) - On-Resistance (rDS(on) /C0087) THERMAL RATINGS 0 25 50 75 100 125 150 175 Safe Operating Area VDS - Drain-to-Source Voltage (V) 200 0.1 1 10 100 Limited by rDS(on) 100 TC = 25/C0095C Single Pulse Maximum Avalanche Drain Current vs. Case Temperature TC - Case Temperature (/C0095C) - Drain Current (A)I D 1 ms 10 ms 100 ms dc 10 /C0109s 100 /C0109s Normalized Thermal Transient Impedance, Junction-to-Case Square Wave Pulse Duration (sec) 0.1 0.01 10-4 10-3 10-2 10-1 100 Normalized Effective Transient Thermal Impedance 600 0.2 0.1 Duty Cycle = 0.5 - Drain Current (A)I D 1 10 0.05 0.02 Single Pulse E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw TSM60N03CP A ll data sheet.com

• Dimension L3 is for re f erence only. L3D b b2 C gage plane height (0.5 mm) e E A L H MILLIMETERS INCHES A 2.18 2.38 0.086 0.094 A1 - 0.127 - 0.005 b 0.64 0.88 0.025 0.035 b2 0.76 1.14 0.030 0.045 b3 4.95 5.46 0.195 0.215 C 0.46 0.61 0.018 0.024 C2 0.46 0.89 0.018 0.035 D 5.97 6.22 0.235 0.245 D1 5.21 - 0.205 - E 6.35 6.73 0.250 0.265 E1 4.32 - 0.170 - H 9.40 10.41 0.370 0.410 e 2.28 BSC 0.090 BSC e1 4.56 BSC 0.180 BSC L 1.40 1.78 0.055 0.070 L3 0.89 1.27 0.035 0.050 L4 - 1.02 - 0.040 L5 1.14 1.52 0.045 0.060 ECN: X12-0247-Rev. M, 24-Dec-12 DWG: 5347 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw TSM60N03CP A ll data sheet.com

All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.tw) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. To the maximum extent permitted by applicable law on Taiwan VBsemi relinquished: (1) any application and all liability arising out of or use of any products; (2) any and all liability, including but not limited to special, consequential damages or incidental ; (3) any and all implied warranties, including a particular purpose, non-infringement and merchantability guarantee. Statement on certain types of applications are based on knowledge of the product is often used in a typical application of the general product VBsemi Taiwan demand that the Taiwan VBsemi of. Statement on whether the product is suitable for a particular application is non-binding. It is the customer's responsibility to verify specific product features in the products described in the specification is appropriate for use in a particular application. Parameter data sheets and technical specifications can be provided may vary depending on the application and performance over time. All operating parameters, including typical parameters must be made by customer's technical experts validated for each customer application. Product specifications do not expand or modify Taiwan VBsemi purchasing terms and conditions, including but not limited to warranty herein. Unless expressly stated in writing, Taiwan VBsemi products are not intended for use in medical, life saving, or life sustaining applications or any other application. Wherein VBsemi product failure could lead to personal injury or death, use or sale of products used in Taiwan VBsemi such applications using client did not express their own risk. Contact your authorized Taiwan VBsemi people who are related to product design applications and other terms and conditions in writing. The information provided in this document and the company's products without a license, express or implied, by estoppel or otherwise, to any intellectual property rights granted to the VBsemi act or document. Product names and trademarks referred to herein are trademarks of their respective representatives will be all. Material Category Policy Taiwan VBsemi Electronics Co., Ltd., hereby certify that all of the products are determined to be RoHS compliant and meets the definition of restrictions under Directive of the European Parliament 2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and electronic equipment (EEE) - modification, unless otherwise specified as inconsistent.(www.VBsemi.tw) Please note that some documents may still refer to Taiwan VBsemi RoHS Directive 2002/95 / EC. We confirm that all products identified as consistent with the Directive 2002/95 / EC European Directive 2011/65 /. Taiwan VBsemi Electronics Co., Ltd. hereby certify that all of its products comply identified as halogen-free halogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese VBsemi documents still refer to the definition of IEC 61249-2-21, and we are sure that all products conform to confirm compliance with IEC 61249-2-21 standard level JS709A. E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw TSM60N03CP A ll data sheet.com