TSM600N25E TSC | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 7
Technical content
Features
- 100% avalanche tested
- Improved ESD performance Block Diagram N-Channel MOSFET
Ordering Information
Part No. Package Packing TSM600N25ECH C5G TO-251 75pcs / Tube TSM600N25ECP ROG TO-252 2.5kpcs / 13” Reel Note: “G” denotes for Halogen- and Antimony-free as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds Absolute Maximum Ratings Parameter Symbol Limit Unit Drain-Source Voltage VDS 250 V Gate-Source Voltage VGS ±30 V Continuous Drain Current Tc = 25ºC ID 8 A Tc = 100ºC 3.6 A Pulsed Drain Current (Note 1) IDM 32 A Single Pulse Avalanche Energy (Note 2) EAS 147 mJ Repetitive Avalanche Current (Note 1) I AR 8 A Repetitive Avalanche Energy (Note 1) EAR 5.2 mJ Power Dissipation @ TC = 25 oC P D 52 W Peak Diode Recovery (Note 3) dv/dt 4.5 V/ns Operating Junction Temperature T J 150 ºC Storage Temperature Range TSTG -55 to +150 oC Thermal Performance Parameter Symbol Limit Unit Thermal Resistance - Junction to Case R ӨJC 2.4 oC/W Thermal Resistance - Junction to Ambient R ӨJA 110 Pin Definition : 1. Gate 2. Drain 3. Source
250V N-Channel Power MOSFET 2/7 Version: A14 Electrical Specifications (Tc=25 oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage V GS = 0V, I D = 250µA BV DSS 250 -- -- V Drain-Source On-State Resistance VGS = 10V, I D = 4A R DS(ON) -- 0.5 0.6 Ω Gate Threshold Voltage V DS = VGS , I D = 250µA V GS(TH) 3 -- 5 V Zero Gate Voltage Drain Current VDS = 250V, V GS = 0V IDSS -- -- 1 µA VDS = 200V, Tc = 125ºC -- -- 10 Gate Body Leakage V GS = ±30V, V DS = 0V I GSS -- -- ±100 µA Forward Transconductance (Note 4) V DS = 30V, I D = 4A g fs -- 7.5 -- S Dynamic Total Gate Charge (Note 4,5) VDS = 200V, I D = 8A, VGS = 10V Q g -- 8.4 -- nC Gate-Source Charge (Note 4,5) Q gs -- 1.9 -- Gate-Drain Charge (Note 4,5) Q gd -- 4 -- Input Capacitance VDS = 25V, V GS = 0V, f = 1.0MHz C iss -- 423 -- pF Output Capacitance C oss -- 74 -- Reverse Transfer Capacitance C rss -- 12 -- Switching Turn-On Delay Time (Note 4,5) VDD = 125V, I D = 8A, R GEN =25 Ω td(on) -- 14 -- ns Turn-On Rise Time (Note 4,5) tr -- 25 -- Turn-Off Delay Time (Note 4,5) td(off) -- 30 -- Turn-Off Fall Time (Note 4,5) tf -- 14 -- Source-Drain Diode Ratings and Characteristic Maximum Continuous Drain-Source Diode Forward Current I S -- -- 8 A Maximum Pulse Drain-Source Diode Forward Current I SM -- -- 32 A Diode-Source Forward Voltage V GS = 0V, IS = 8A V SD -- -- 1.5 V Reverse Recovery Time (Note 4) V GS = 0V, IS = 8A dI F/dt = 100A/µs trr -- 157 -- ns Reverse Recovery Charge (Note 4) Q rr -- 0.6 -- µC Note: 1. Pulse width limited by safe operating area 2. L=3.68mH, I AS =8A, V DD = 50V, R G = 25Ω, Starting T J = 25ºC 3. ISD ≤8A, di/dt ≤ 200A/µs, V DD ≤ BV DS , Starting T J=25 ℃
4 Pulse test: pulse width ≤300µs, duty cycle ≤2%
- Switching time is essentially independent of operating temperature.
250V N-Channel Power MOSFET 3/7 Version: A14 Electrical Characteristics Curves Output Characteristics Transfer Characteristics On-Resistance vs. Drain Current Gate Charge On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage
250V N-Channel Power MOSFET 4/7 Version: A14 Electrical Characteristics Curves Drain Current vs. Case Temperature BV DSS vs. Junction Temperature VTH vs. Junction Temperature Capacitance vs. Drain-Source Voltage Maximum Safe Operating Area Transient Thermal Impedance
250V N-Channel Power MOSFET 5/7 Version: A14 TO-251 Mechanical Drawing Unit: Millimeters Marking Diagram Y = Year Code M = Month Code for Halog en Free Product (O =Jan, P=Feb, Q =Mar, R =Apl, S=May, T=Jun, U =Jul, V=Aug, W =Sep, X=Oct, Y=Nov, Z=Dec) L = Lot Code
250V N-Channel Power MOSFET 6/7 Version: A14 TO-252 Mechanical Drawing Unit: Millimeters Marking Diagram Y = Year Code M = Month Code for Halogen Fr ee Product (O =Jan, P=Feb, Q =Mar, R =Apl, S=May, T=Jun, U =Jul, V=Aug, W =Sep, X=Oct, Y=Nov, Z=Dec) L = Lot Code
250V N-Channel Power MOSFET 7/7 Version: A14 Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale.