TSM5ND50CPROG

TSM5ND50_11 TSC | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 9

Technical content

Features

• Low gate charge typical @ 20nC
• Low Crss typical @ 17pF
• Fast Switching
• Improved dv/dt capability
• ESD Protection Block Diagram N-Channel MOSFET

Ordering Information

Part No. Package Packing TSM5ND50CP ROG TO-252 2,500pcs / 13” Reel TSM5ND50CH C5G TO-251 75pcs / Tube Note: “G” denotes for Halogen Free Absolute Maximum Rating (Ta = 25 oC unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 500 V Gate-Source Voltage VGS ±30 V Continuous Drain Current ID 4.4 A Pulsed Drain Current IDM 17.6 A Continuous Source Current (Diode Conduction) I S 4.4 A Peak Diode Recovery (Note 2) dv/dt 4.5 V/ns Single Pulse Drain to Source Avalanche Energy (Note 3) EAS 130 mJ Total Power Dissipation @Ta = 25 oC P DTOT 70 W Operating Junction and Storage Temperature Range T J, T STG -55 to +150 oC Thermal Performance Parameter Symbol Limit Unit Thermal Resistance - Junction to Case R ӨJC 1.78 oC/W Thermal Resistance - Junction to Ambient R ӨJA 62.5 oC/W Notes: Surface mounted on FR4 board t ≤ 10sec Pin Definition : 1. Gate 2. Drain 3. Source

500V N-Channel Power MOSFET 2/9 Version: F11 Electrical Specifications (Ta = 25 oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage V GS = 0V, I D = 250uA BV DSS 500 -- -- V Drain-Source On-State Resistance VGS = 10V, I D = 2.2A R DS(ON) -- 1.2 1.5 Ω Gate Threshold Voltage V DS = VGS , I D = 50uA V GS(TH) 3.0 -- 4.8 V Zero Gate Voltage Drain Current VDS = 500V, V GS = 0V I DSS -- -- 1 uA Gate Body Leakage V GS = ±20V, V DS = 0V I GSS -- -- ±10 uA Forward Transconductance V DS = 15V, I D = 2.2A g fs -- 3.1 -- S Dynamic b Total Gate Charge VDS = 250V, I D = 4.4A, VGS = 10V Q g -- 20 -- nC Gate-Source Charge Q gs -- 4 -- Gate-Drain Charge Q gd -- 10 -- Input Capacitance VDS = 25V, V GS = 0V, f = 1.0MHz C iss -- 535 -- pF Output Capacitance C oss -- 75 -- Reverse Transfer Capacitance C rss -- 17 -- Switching c Turn-On Delay Time VGS = 10V, I D = 4.4A, VDD = 250V, R G = 25 Ω td(on) -- 21.6 -- nS Turn-On Rise Time tr -- 11.7 -- Turn-Off Delay Time td(off) -- 14.5 -- Turn-Off Fall Time tf -- 4.5 -- Source Drain Diode Source-drain Current I SD -- -- 4.4 A Diode Forward Voltage I S = 4.4A, V GS = 0V V SD -- 0.82 1.2 V Reverse Recovery Time VDD = 30V, I SD = 4.4A, dI F/dt = 100A/us. TJ=150ºC trr -- 310 -- nS Reverse Recovery Charge Q rr -- 1425 -- nC Reverse Recovery Current IRRM -- 9.2 -- A Notes: 1. Pulse test: pulse width ≤300uS, duty cycle ≤2% 2. I SD <4.4A, di/dt<200A/us, VDD<BV DSS 3. Starting VDD = 50V, I AS =4.4A, T J=25ºC 4. For design reference only, not subject to production testing. 5. Switching time is essentially independent of operating temperature.

500V N-Channel Power MOSFET 3/9 Version: F11 Electrical Characteristics Curve (Ta = 25 oC, unless otherwise noted) Output Characteristics Transfer Characteristics On-Resistance vs. Drain Current Gate Charge On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage

500V N-Channel Power MOSFET 4/9 Version: F11 Electrical Characteristics Curve (Ta = 25 oC, unless otherwise noted) On-Resistance vs. Gate-Source Voltage Threshold Voltage Maximum Safe Operating Area Normalized Thermal Transient Impedance, Junction-to-Ambient

500V N-Channel Power MOSFET 5/9 Version: F11 Unclamped Inductive Load Test Circuit and Waveform Switching Time Test Circuits for Resistive Load Gate Charge Test Circuit

500V N-Channel Power MOSFET 6/9 Version: F11 Test Circuit for Inductive Load Switching and Diode Recovery Times

500V N-Channel Power MOSFET 7/9 Version: F11 TO-251 Mechanical Drawing Marking Diagram Y = Year Code M = Month Code for Halogen Fr ee Product (O =Jan, P=Feb, Q =Mar, R =Apl, S=May, T=Jun, U =Jul, V=Aug, W =Sep, X=Oct, Y=Nov, Z=Dec) L = Lot Code TO-251 DIMENSION DIM MILLIMETERS INCHES MIN MAX MIN MAX A 2.10 2.50 0.083 0.098 b 0.65 1.05 0.026 0.041 b1 0.58 0.62 0.023 0.024 b2 4.80 5.20 0.189 0.205 b3 0.68 0.72 0.027 0.028 C 0.35 0.65 0.014 0.026 C1 0.40 0.60 0.016 0.024 D 5.30 5.70 0.209 0.224 E 6.30 6.70 0.248 0.264 e 2.30 BSC 0.09 BSC L 7.00 8.00 0.276 0.315 L1 1.40 1.80 0.055 0.071 L2 1.30 1.70 0.051 0.067 L3 0.50 0.90 0.020 0.035

500V N-Channel Power MOSFET 8/9 Version: F11 TO-252 Mechanical Drawing Marking Diagram Y = Year Code M = Month Code for Halogen Free Product (O =Jan, P=Feb, Q =Mar, R =Apl, S=May, T=Jun, U =Jul, V=Aug, W =Sep, X=Oct, Y=Nov, Z=Dec) L = Lot Code TO-252 DIMENSION DIM MILLIMETERS INCHES MIN MAX MIN MAX A 2.30 BSC 0.090 BSC B 10.20 10.80 0.402 0.425 C 5.30 5.70 0.209 0.224 D 6.30 6.70 0.248 0.264 E 2.10 2.50 0.083 0.098 F 0.00 0.20 0.000 0.008 G 4.80 5.20 0.189 0.205 G1 0.40 0.80 0.016 0.031 H 0.40 0.60 0.016 0.024 H1 0.35 0.65 0.014 0.026 J 3.35 3.65 0.132 0.144 K 0.50 1.10 0.020 0.043 L 0.90 1.50 0.035 0.059 M 1.30 1.70 0.051 0.067

500V N-Channel Power MOSFET 9/9 Version: F11 Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale.