TSM4NB60 TSC | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 10

Technical content

Features

  • Low R DS(ON) 2.2 Ω (Typ.)
  • Low gate charge typical @ 14.5nC (Typ.)
  • Low Crss typical @ 7.0pF (Typ.)
  • 100% Avalanche Tested

Ordering Information

Part No. Package Packing TSM4NB60CH C5G TO-251 75pcs / Tube TSM4NB60CP ROG TO-252 2.5Kpcs / 13” Reel TSM4NB60CZ C0 TO-220 50pcs / Tube TSM4NB60CI C0 ITO-220 50pcs / Tube Note: “G” denotes for Halogen Free Absolute Maximum Rating (Ta = 25 oC unless otherwise noted) Parameter Symbol Limit Unit IPAK/DPAK ITO-220 TO-220 Drain-Source Voltage V DS 600 V Gate-Source Voltage V GS ±30 V Continuous Drain Current Tc = 25ºC ID 4 A Tc = 100ºC 2.4 A Pulsed Drain Current * I DM 16 A Single Pulse Avalanche Energy (Note 2) EAS 100 mJ Avalanche Current (Repetitive) (Note 1) I AR 4 A Repetitive Avalanche Energy (Note 1) E AR 5 mJ Peak Diode Recovery dv/dt (Note 3) dv/dt 4.5 V/ns Total Power Dissipation @ TC = 25 oC P TOT 50 25 70 W Operating Junction Temperature T J 150 ºC Storage Temperature Range T STG -55 to +150 oC Note: Limited by maximum junction temperature Block Diagram N-Channel MOSFET Pin Definition : 1. Gate 2. Drain 3. Source

600V N-Channel Power MOSFET 2/10 Version: B11 Thermal Performance Parameter Symbol Limit Unit IPAK/DPAK ITO-220 TO-220 Thermal Resistance - Junction to Case R ӨJC 2.5 5 1.78 oC/W Thermal Resistance - Junction to Ambient R ӨJA 83 62.5 62.5 oC/W Electrical Specifications (Ta = 25 oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage V GS = 0V, I D = 250uA BV DSS 600 -- -- V Drain-Source On-State Resistance VGS = 10V, I D = 2A R DS(ON) -- 2.2 2.5 Ω Gate Threshold Voltage V DS = VGS , I D = 250uA V GS(TH) 2.5 3.5 4.5 V Zero Gate Voltage Drain Current VDS = 600V, V GS = 0V I DSS -- -- 1 uA Gate Body Leakage V GS = ±30V, V DS = 0V I GSS -- -- ±100 nA Forward Transfer Conductance V DS = 40V, I D = 2A g fs -- 2.6 -- S Dynamic Total Gate Charge VDS = 480V, I D = 4A, VGS = 10V (Note 4,5) Q g -- 14.5 -- nC Gate-Source Charge Q gs -- 3.4 -- Gate-Drain Charge Q gd -- 7 -- Input Capacitance VDS = 25V, V GS = 0V, f = 1.0MHz C iss -- 500 -- pF Output Capacitance C oss -- 53.2 -- Reverse Transfer Capacitance C rss -- 7 -- Switching Turn-On Delay Time VGS = 10V, I D = 4A, VDD = 300V, R G =25 Ω (Note 4,5) td(on) -- 11 -- nS Turn-On Rise Time tr -- 20 -- Turn-Off Delay Time td(off) -- 30 -- Turn-Off Fall Time tf -- 19 -- Source-Drain Diode Ratings and Characteristic Source Current Integral reverse diode in the MOSFET IS -- -- 4 A Source Current (Pulse) ISM -- -- 16 A Diode Forward Voltage I S = 4A, V GS = 0V V SD -- -- 1.13 V Reverse Recovery Time VGS = 0V, I S =4A, dI F/dt = 100A/us tfr -- 522 -- nS Reverse Recovery Charge Q fr -- 1.6 -- uC Note 1: Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature Note 2: VDD = 50V, I AS =4A, L=8mH, RG =25 Ω, Starting T J=25ºC Note 3: ISD ≤4A, di/dt ≤200A/uS, V DD ≤BV DSS , Starting TJ=25ºC Note 4: Pulse test: pulse width ≤300uS, duty cycle ≤2% Note 5: Essentially Independent of Operating Temperature

600V N-Channel Power MOSFET 3/10 Version: B11 Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveform E AS Test Circuit & Waveform

600V N-Channel Power MOSFET 4/10 Version: B11 Diode Reverse Recovery Time Test Circuit & Waveform

600V N-Channel Power MOSFET 5/10 Version: B11 Electrical Characteristics Curve (Ta = 25ºC, unless otherwise noted) Output Characteristics Transfer Characteristics On-Resistance vs. Drain Current Gate Charge

600V N-Channel Power MOSFET 6/10 Version: B11 TO-220 Mechanical Drawing Marking Diagram Y = Year Code M = Mon th Code (A =Jan, B =Feb, C =Mar, D =Apl, E=May, F=Jun, G =Jul, H =Aug, I=Sep, J=Oct, K =Nov, L=Dec) L = Lot Code TO-220 DIMENSION DIM MILLIMETERS INCHES MIN MAX MIN MAX A 10.000 10.500 0.394 0.413 B 3.740 3.910 0.147 0.154 C 2.440 2.940 0.096 0.116 D - 6.350 - 0.250 E 0.381 1.106 0.015 0.040 F 2.345 2.715 0.092 0.058 G 4.690 5.430 0.092 0.107 H 12.700 14.732 0.500 0.581 J 14.224 16.510 0.560 0.650 K 3.556 4.826 0.140 0.190 L 0.508 1.397 0.020 0.055 M 27.700 29.620 1.060 1.230 N 2.032 2.921 0.080 0.115 O 0.255 0.610 0.010 0.024 P 5.842 6.858 0.230 0.270

600V N-Channel Power MOSFET 7/10 Version: B11 ITO-220 Mechanical Drawing Marking Diagram Y = Year Code M = Month Code (A =Jan, B =Feb, C =Mar, D =Apl, E=May, F=Jun, G =Jul, H =Aug, I=Sep, J=Oct, K =Nov, L=Dec) L = Lot Code ITO-220 DIMENSION DIM MILLIMETERS INCHES MIN MAX MIN MAX A 10.04 10.07 0.395 0.396 B 6.20 (typ.) 0.244 (typ.) C 2.20 (typ.) 0.087 (typ.) D ∮1.40 (typ.) ∮0.055 (typ.) E 15.0 15.20 0.591 0.598 F 0.52 0.54 0.020 0.021 G 2.35 2.73 0.093 0.107 H 13.50 13.55 0.531 0.533 I 1.11 1.49 0.044 0.058 J 2.60 2.80 0.102 0.110 K 4.49 4.50 0.176 0.177 L 1.15 (typ.) 0.045 (typ.) M 3.03 3.05 0.119 0.120 N 2.60 2.80 0.102 0.110 O 6.55 6.65 0.258 0.262

600V N-Channel Power MOSFET 8/10 Version: B11 TO-251 Mechanical Drawing Marking Diagram Y = Year Code M = Month Code for Halogen Free Product (O =Jan, P=Feb, Q =Mar, R =Apl, S=May, T=Jun, U =Jul, V=Aug, W =Sep, X=Oct, Y=Nov, Z=Dec) L = Lot Code TO-251 DIMENSION DIM MILLIMETERS INCHES MIN MAX MIN MAX A 2.10 2.50 0.083 0.098 b 0.65 1.05 0.026 0.041 b1 0.58 0.62 0.023 0.024 b2 4.80 5.20 0.189 0.205 b3 0.68 0.72 0.027 0.028 C 0.35 0.65 0.014 0.026 C1 0.40 0.60 0.016 0.024 D 5.30 5.70 0.209 0.224 E 6.30 6.70 0.248 0.264 e 2.30 BSC 0.09 BSC L 7.00 8.00 0.276 0.315 L1 1.40 1.80 0.055 0.071 L2 1.30 1.70 0.051 0.067 L3 0.50 0.90 0.020 0.035

600V N-Channel Power MOSFET 9/10 Version: B11 TO-252 Mechanical Drawing Marking Diagram Y = Year Code M = Month Code for Halogen Free Product (O =Jan, P=Feb, Q =Mar, R =Apl, S=May, T=Jun, U =Jul, V=Aug, W =Sep, X=Oct, Y=Nov, Z=Dec) L = Lot Code TO-252 DIMENSION DIM MILLIMETERS INCHES MIN MAX MIN MAX A 2.30 BSC 0.090 BSC B 10.20 10.80 0.402 0.425 C 5.30 5.70 0.209 0.224 D 6.30 6.70 0.248 0.264 E 2.10 2.50 0.083 0.098 F 0.00 0.20 0.000 0.008 G 4.80 5.20 0.189 0.205 G1 0.40 0.80 0.016 0.031 H 0.40 0.60 0.016 0.024 H1 0.35 0.65 0.014 0.026 J 3.35 3.65 0.132 0.144 K 0.50 1.10 0.020 0.043 L 0.90 1.50 0.035 0.059 M 1.30 1.70 0.051 0.067

600V N-Channel Power MOSFET 10/10 Version: B11 Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale.