TSM4N80_1310 TSC | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 10
Technical content
Features
- Low R DS(ON) 3Ω (Max.)
- Low gate charge typical @ 25nC (Typ.)
- Improve dv/dt capability
Ordering Information
Part No. Package Packing TSM4N80CZ C0 TO-220 50pcs / Tube TSM4N80CI C0 ITO-220 50pcs / Tube Absolute Maximum Rating (Ta = 25 oC unless otherwise noted) Parameter Symbol TO-220 ITO-220 Unit Drain-Source Voltage V DS 800 V Gate-Source Voltage V GS ±30 V Continuous Drain Current Tc = 25 oC ID 4 4 * A Tc = 100 oC 2.5 2.5 * Pulsed Drain Current * I DM 16 16 * A Peak Diode Recovery dv/dt (Note 3) dv/dt 4.5 V Single Pulse Avalanche Energy (Note 2) EAS 85 mJ Avalanche Current (Repetitive) (Note 1) I AR 4 A Repetitive Avalanche Energy (Note 1) E AR 12.3 mJ Power Dissipation Tc = 25 oC PD 123 38.7 W Derate above 25 ℃ 0.98 0.3 ºC/W Operating Junction Temperature T J 150 ºC Storage Temperature Range T STG -55 to +150 o C * Limited by maximum junction temperature Block Diagram N-Channel MOSFET Pin Definition: 1. Gate 2. Drain 3. Source
800V N-Channel Power MOSFET 2/10 Version: C13 Thermal Performance Parameter Symbol TO-220 ITO-220 Unit Thermal Resistance - Junction to Case R ӨJC 1.01 3.23 oC/W Thermal Resistance - Junction to Ambient R ӨJA 62.5 Notes: Surface mounted on FR4 board t ≤ 10sec Electrical Specifications (Tc = 25 oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage V GS = 0V, I D = 250uA BV DSS 800 -- -- V Drain-Source On-State Resistance VGS = 10V, I D = 2.0A R DS(ON) -- 2.5 3.0 Ω Gate Threshold Voltage V DS = VGS , I D = 250uA V GS(TH) 2.0 -- 4.0 V Zero Gate Voltage Drain Current VDS = 800V, V GS = 0V I DSS -- -- 10 uA Gate Body Leakage V GS = ±30V, V DS = 0V I GSS -- -- ±100 nA Forward Transconductance V DS = 30V, I D = 2.0A g fs -- 7.1 -- S Diode Forward Voltage I S = 4A, V GS = 0V V SD -- -- 1.5 V Dynamic b Total Gate Charge VDS = 640V, I D = 4A, VGS = 10V Q g -- 20 -- nC Gate-Source Charge Q gs -- 3.7 -- Gate-Drain Charge Q gd -- 8.2 -- Input Capacitance VDS = 25V, V GS = 0V, f = 1.0MHz C iss -- 955 -- pF Output Capacitance C oss -- 80 -- Reverse Transfer Capacitance C rss -- 13 -- Switching c Turn-On Delay Time VGS = 10V, I D = 4A, VDD = 400V, R G = 25 Ω td(on) -- 49 -- nS Turn-On Rise Time tr -- 38 -- Turn-Off Delay Time td(off) -- 146 -- Turn-Off Fall Time tf -- 50 -- Reverse Recovery Time VGS = 0V, I S = 4A, dI F/dt = 100A/us tfr -- 487 -- nS Reverse Recovery Charge Q fr -- 2.8 -- uC Notes: 1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature 2. V DD = 50V, I AS =4A, L=10mH, R G =25 Ω, Starting T J=25 ℃ 3. ISD ≤8A, di/dt ≤ 200A/uS, Vdd ≤ BV, Starting T J=25 ℃ 4. Pulse test: pulse width ≤300uS, duty cycle ≤2% 5. b For design reference only, not subject to production testing. 6. c Switching time is essentially independent of operating temperature.
800V N-Channel Power MOSFET 3/10 Version: C13 Electrical Characteristics Curve (Tc = 25 oC, unless otherwise noted) Output Characteristics Transfer Characteristics On-Resistance vs. Drain Current Gate Charge On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage
800V N-Channel Power MOSFET 4/10 Version: C13 Electrical Characteristics Curve (Ta = 25 oC, unless otherwise noted) Drain Current vs. Case Temperature BV DSS vs. Junction Temperature Maximum Safe Operating Area (TO-220) Capacitance vs. Drain-Source Voltage Maximum Safe Operating Area (ITO-220)
800V N-Channel Power MOSFET 5/10 Version: C13 Electrical Characteristics Curve (Ta = 25 oC, unless otherwise noted) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Thermal Transient Impedance, Junction-to-Ambient(ITO-220)
800V N-Channel Power MOSFET 6/10 Version: C13 Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveform E AS Test Circuit & Waveform
800V N-Channel Power MOSFET 7/10 Version: C13 Diode Reverse Recovery Time Test Circuit & Waveform
800V N-Channel Power MOSFET 8/10 Version: C13 TO-220 Mechanical Drawing Unit: Millimeters Marking Diagram Y = Year Code M = Month Code (A =Jan, B =Feb, C =Mar, D =Apl, E=May, F=Jun, G =Jul, H =Aug, I=Sep, J=Oct, K =Nov, L=Dec) L = Lot Code
800V N-Channel Power MOSFET 9/10 Version: C13 ITO-220 Mechanical Drawing Unit: Millimeters Marking Diagram Y = Year Code M = Month Code (A =Jan, B =Feb, C =Mar, D =Apl, E=May, F=Jun, G =Jul, H =Aug, I=Sep, J=Oct, K =Nov, L=Dec) L = Lot Code
800V N-Channel Power MOSFET 10/10 Version: C13 Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale.