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Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 7

Technical content

Features

  • 100% Avalanche Tested
  • G-S ESD Protection Diode Embedded Block Diagram N-Channel MOSFET with ESD Protection

Ordering Information

Part No. Package Packing TSM4N60ECH C5G TO-251 75pcs / Tube TSM4N60ECP ROG TO-252 2.5kpcs / 13” Reel Note: “G” denotes for Halogen- and Antimony-free as those which contain <900ppm bromine, <900ppm chlorine (<1500p pm total Br + Cl) and <1000ppm antimony compounds Absolute Maximum Ratings (Tc=25oC unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 600 V Gate-Source Voltage VGS ±30 V Continuous Drain Current (Note 1) Tc=25℃ ID 4 A Tc=100℃ 2.34 A Pulsed Drain Current (Note 2) IDM 16 A Repetitive Avalanche Current (Note 1) IAR 4 A Repetitive Avalanche Energy (Note 1) EAR 8.62 mJ Single Pulse Avalanche Energy (Note 3) EAS 192 mJ Total Power Dissipation @ TC = 25℃ PD 86.2 W Derate above TC = 25℃ 0.68 W/℃ Peak Diode Recovery dV/dt (Note 4) dV/dt 4.5 V/ns Operating Junction Temperature TJ 150 ℃ Storage Temperature Range TSTG -55 to +150 ℃ Thermal Performance Parameter Symbol Limit Unit Thermal Resistance - Junction to Case RӨJC 1.45 ℃/W Thermal Resistance - Junction to Ambient RӨJA 110 ℃/W Pin Definition: 1. Gate 2. Drain 3. Source

600V, 4A, 2.5Ω N-Channel Power MOSFET 2/7 Version: A14 Electrical Specifications (TC = 25oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static (Note 5) Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA BVDSS 600 -- -- V Drain-Source On-State Resistance VGS = 10V, ID = 2A RDS(ON) -- 2 2.5 Ω Gate Threshold Voltage VDS = VGS, ID = 250µA VGS(TH) 3 -- 5 V Zero Gate Voltage Drain Current VDS = 600V, VGS = 0V IDSS -- -- 1 µA Gate Body Leakage VGS = ±30V, VDS = 0V IGSS -- -- ±100 µA Forward Transconductance VDS = 30V, ID = 2A gfs -- 6 -- S Dynamic (Note 6) Total Gate Charge VDS = 480V, ID = 4A, VGS = 10V Qg -- 12 -- nC Gate-Source Charge Qgs -- 3 -- Gate-Drain Charge Qgd -- 6 -- Input Capacitance VDS = 25V, VGS = 0V, f = 1MHz Ciss -- 545 -- pF Output Capacitance Coss -- 61 -- Reverse Transfer Capacitance Crss -- 10 -- Switching (Note 7) Turn-On Delay Time VDD = 300V, VGS = 10V, RG = 25W, ID = 4A td(on) -- 18 -- ns Turn-On Rise Time tr -- 27 -- Turn-Off Delay Time td(off) -- 47 -- Turn-Off Fall Time tf -- 21 -- Source-Drain Diode Ratings and Characteristic (Note 5) Maximum Continuous Drain-Source Diode Forward Current IS -- -- 4 A Maximum Pulse Drain-Source Diode Forward Current ISM -- -- 16 A Diode-Source Forward Voltage VGS = 0V, IS = 4A VSD -- -- 1.5 V Reverse Recovery Time VGS = 0V, IS = 4A dIF/dt = 100A/µs trr -- 316 -- ns Reverse Recovery Charge Qrr -- 1.2 -- nC Notes: 1. Current limited by package 2. Pulse width limited by the maximum junction temperature 3. VDD = 50V, L= 22mH, IAS = 4A, RG = 25W, Starting TJ = 25℃ 4. ISD ≤ 4A, di/dt ≤ 200A/µs, VDD ≤ BVDS, Starting TJ = 25℃ 5. Pulse test: PW ≤ 300µs, duty cycle ≤ 2% 6. For DESIGN AID ONLY, not subject to production testing. 7. Switching time is essentially independent of operating temperature.

600V, 4A, 2.5Ω N-Channel Power MOSFET 3/7 Version: A14 Electrical Characteristics Curves (TC = 25oC, unless otherwise noted) Output Characteristics Transfer Characteristics On-Resistance vs. Drain Current Gate Charge On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage

600V, 4A, 2.5Ω N-Channel Power MOSFET 4/7 Version: A14 Electrical Characteristics Curve (TC = 25oC, unless otherwise noted) Drain Current vs. Case Temperature BVDSS vs. Junction Temperature Threshold Voltage vs. Junction Temperature Capacitance vs. Drain-Source Voltage Maximum Safe Operating Area Normalized Transient Impedance

600V, 4A, 2.5Ω N-Channel Power MOSFET 5/7 Version: A14 TO-251 Mechanical Drawing Unit: Millimeters Marking Diagram Y = Year Code M = Month Code for Halogen Free Product (O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep, X=Oct, Y=Nov, Z=Dec) L = Lot Code

600V, 4A, 2.5Ω N-Channel Power MOSFET 6/7 Version: A14 TO-252 Mechanical Drawing Unit: Millimeters Marking Diagram Y = Year Code M = Month Code for Halogen Free Product (O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep, X=Oct, Y=Nov, Z=Dec) L = Lot Code

600V, 4A, 2.5Ω N-Channel Power MOSFET 7/7 Version: A14 Notice Specifications of the products displayed herein are subject to change wit hout notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property r ights is granted by this document. Except as provided in TSC ’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life -saving, or life -sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale.