TSM4N60 TSC | Alldatasheet

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TSM4N60 600V N-Channel Power MOSFET 1/9 Version: A07 TO-220 ITO-220 TO-251 (IPAK) TO-252 (DPAK) Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 600 V Gate-Source Voltage VGS ±30 V Continuous Drain Current ID 4 A Pulsed Drain Current IDM 16 A Single Pulse Drain to Source Avalanche Energy (VDD = 50V, IAS=4A, L=27.5mH, RG=25Ω), Starting TJ = 25oC EAS 240 mJ Repetitive Avalanche Energy (Pulse width limited by junction temperature) EAR 10 mJ Peak Diode Recovery dv/dt (ISD ≤ 4A, di/dt ≤ 200A/us, VDD ≤ BVDSS) Starting TJ=25ºC dv/dt 4.5 V/ns TO-220 / TO-251 / TO-252 70 Maximum Power Dissipation @Ta = 25oC ITO-220 PD 25 W Operating Junction Temperature TJ +150 oC Operating Junction and Storage Temperature Range TJ, TSTG -55 to +150 oC Block Diagram N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on)(Ω) ID (A) 600 2.5 @ VGS =10V 2 Pin Definition: 1. Gate 2. Drain 3. Source

TSM4N60 600V N-Channel Power MOSFET 2/9 Version: A07

TSM4N60 600V N-Channel Power MOSFET 3/9 Version: A07 Electrical Characteristics Curve (Ta = 25 oC, unless otherwise noted) Output Characteristics Transfer Characteristics On-Resistance vs. Drain Current Gate Charge On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage

TSM4N60 600V N-Channel Power MOSFET 4/9 Version: A07 Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) Breakdown Voltage vs. Temperature Threshold Voltage vs. Temperature Maximum Safe Operating Area Normalized Thermal Transient Impedance, Junction-to-Ambient

TSM4N60 600V N-Channel Power MOSFET 5/9 Version: A07 TO-220 Mechanical Drawing

TSM4N60 600V N-Channel Power MOSFET 6/9 Version: A07 ITO-220 Mechanical Drawing

TSM4N60 600V N-Channel Power MOSFET 7/9 Version: A07 SOT-251 Mechanical Drawing

TSM4N60 600V N-Channel Power MOSFET 8/9 Version: A07 SOT-252 Mechanical Drawing

TSM4N60 600V N-Channel Power MOSFET 9/9 Version: A07