TSM4539D TSC | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 4
Technical content
Features
- Advance Trench Process Technology
- High Density Cell Design for Ultra Low On-resistance Application
- Load Switch
- PA Switch
Ordering Information
Part No. Package Packing TSM4539DCS RLG SOP-8 2.5Kpcs / 13” Reel Note: “G” denote for Halogen Free Product (TA=25 oC unless otherwise noted) Parameter Symbol N-CH Limit P-CH Limit Unit Drain-Source Voltage VDS 30 -30 V Gate-Source Voltage VGS ±20 ±20 V Continuous Drain Current, V GS I D 6.5 -4.2 A Pulsed Drain Current, IDM 28 -20 A Drain-Source Diode Forward Current I S 2.5 -1.9 A Power Dissipation @ Ta = 25 oC PD 2.1 2.1 W Operating Junction Temperature T J 150 oC Operating Junction and Storage Temperature Range TJ, T STG -55 ~ +150 oC Thermal Performance Parameter Symbol N-CH Limit P-CH Limit Unit Junction to Ambient Thermal Resistance R ӨJA 62.5 62.5 oC/W Junction to Lead Thermal Resistance R ӨJL 40 40 oC/W Notes: a. Pulse width limited by the Maximum junction temperature b. Surface Mounted on FR4 Board using 1 inch sq pad size, t ≤ 5sec. c. Surge Applied at Rated Load Conditions, Half-Wave, Single Phase, 60Hz. Block Diagram N-Channel P-Channel Pin Definition : 1. Source 1 8. Drain 1 2. Gate 1 7. Drain 1 3. Source 2 6. Drain 2 4. Gate 2 5. Drain 2
Complementary Enhancement MOSFET 2/4 Version: A12 Electrical Specifications (TA=25 oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage VGS =0V, I D = 250uA BV DSS N-CH 30 -- -- V VGS =0V, I D =-250uA P-CH -30 -- -- Gate Body Leakage VGS = ±20V, V DS =0V IGSS N-CH -- -- ±100 nA VGS = ±20V, V DS =0V P-CH -- -- ±10 Zero Gate Voltage Drain Current VDS =24V, V GS =0V IDSS N-CH -- -- 1 µA VDS =-24V, V GS =0V P-CH -- -- -1 Drain-Source On-State Resistance a VGS =10V, I D =6.5A R DS(ON) N-CH -- 23 28 m Ω VGS =-10V, I D =-4.2A P-CH -- 50 65 VGS =4.5V, I D =5A N-CH -- 35 42 VGS =-4.5V, I D =-3.5A P-CH 82 90 Dynamic b Total Gate Charge N-Channel V DS =10V, I D =1A, VGS =10V Q g N-CH -- 7 -- nC P-CH -- 9.7 -- Gate-Source Charge Q gs N-CH -- 1.6 -- P-Channel V DS =-15V, I D =-5.2A, VGS =-10V P-CH -- 1.6 -- Gate-Drain Charge Q gd N-CH -- 1.0 -- P-CH -- 1.3 -- Input Capacitance N-Channel V DS =15V, V GS = 0V, f = 1.0MHz C iss N-CH -- 610 -- pF P-CH -- 100 -- Output Capacitance C oss N-CH -- 77 -- P-Channel V DS =-15V, V GS = 0V, f = 1.0MHz P-CH -- 551 -- Reverse Transfer Capacitance C rss N-CH -- 90 -- P-CH -- 60 -- Switching b Turn-On Delay Time N-Channel V DD =15V, ID = 1A, VGEN =10V, R G = 6Ω td(on) N-CH -- 7 -- nS P-CH -- 6.2 -- Turn-On Rise Time tr N-CH -- 10 -- P-CH -- 6.2 -- Turn-Off Delay Time P-Channel V DD =-15V, ID = -1A, VGEN =-10V, R G = 6Ω td(off) N-CH -- 16 -- P-CH -- 26 -- Turn-Off Fall Time tf N-CH -- 7 -- P-CH -- 5.5 -- Diode Forward Voltage IS =1 A, V GS = 0V VSD N-CH -- -- 1.0 V IS =-1.9A, V GS = 0V P-CH -- -- -1.3 Notes: a. Pulse test: PW ≤300µS, duty cycle ≤2% b. For DESIGN AID ONLY, not subject to production testing.
Complementary Enhancement MOSFET 3/4 Version: A12 SOP-8 Mechanical Drawing SOP-8 DIMENSION DIM MILLIMETERS INCHES MIN MAX MIN MAX. A 4.80 5.00 0.189 0.196 B 3.80 4.00 0.150 0.157 C 1.35 1.75 0.054 0.068 D 0.35 0.49 0.014 0.019 F 0.40 1.25 0.016 0.049 G 1.27BSC 0.05BSC K 0.10 0.25 0.004 0.009 M 0º 7º 0º 7º P 5.80 6.20 0.229 0.244 R 0.25 0.50 0.010 0.019
Complementary Enhancement MOSFET 4/4 Version: A12 Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale.