TSM4415 TSC | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 4

Technical content

Features

  • Advance Trench Process Technology
  • High Density Cell Design for Ultra Low On-resistance Application
  • Load Switch
  • PA Switch

Ordering Information

Part No. Package Packing TSM4415CS RL SOP-8 2.5kpcs/13” reel Absolute Maximum Rating (Ta = 25 oC unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V DS -30 V Gate-Source Voltage V GS ±25 V Continuous Drain Current, VGS @4.5V. I D -8 A Pulsed Drain Current, VGS @4.5V I DM -30 A Continuous Source Current (Diode Conduction)a,b I S -1 A Ta = 25 oC 3 Maximum Power Dissipation Ta = 70oC PD 2.1 W Operating Junction Temperature T J +150 oC Operating Junction and Storage Temperature Range T J, TSTG - 55 to +150 oC Thermal Performance Parameter Symbol Limit Unit Junction to Foot (Drain) Thermal Resistance R ӨJF 30 oC/W Junction to Ambient Thermal Resistance (PCB mounted) R ӨJA 75 oC/W Notes: a. Pulse width limited by the Maximum junction temperature b. Surface Mounted on FR4 Board, t ≤ 5 sec. PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) ID (A) 26 @ VGS = -20V -8.0 -30 35 @ VGS = -10V -8.0 Block Diagram P-Channel MOSFET Pin Definition: 1. Source 8. Drain 2. Source 7. Drain 3. Source 6. Drain 4. Gate 5, Drain (1,2,3) (5,6,7,8) (4)

2/2 Version: Preliminary Electrical Specifications Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage V GS = 0V, ID = -250uA BV DSS -30 -- -- V Gate Threshold Voltage V DS = VGS, ID = -250µA V GS(TH) -1.0 -- -3.0 V Gate Body Leakage V GS = ±20V, VDS = 0V I GSS -- -- ±100 nA Zero Gate Voltage Drain Current V DS = -24V, VGS = 0V I DSS -- -- -1.0 µA On-State Drain Currenta V DS ≥-10V, VGS = -5V I D(ON) -6 -- -- A VGS = -20V, ID = -8A -- 21 26 VGS = -10V, ID = -8A -- 28 35 Drain-Source On-State Resistancea VGS = -6V, ID = -5A RDS(ON) -- 41 -- mΩ Forward Transconductancea V DS = -5V, ID = -8A g fs -- 11.5 -- S Diode Forward Voltage I S = -1A, VGS = 0V V SD -- -0.8 -1.0 V Dynamicb Total Gate Charge Q g -- 18.1 -- Gate-Source Charge Q gs -- 6.5 -- Gate-Drain Charge VDS = -15V, ID = -8A, VGS = -10V Qgd -- 3.2 -- nC Input Capacitance C iss -- 1047.9 -- Output Capacitance C oss -- 172.8 -- Reverse Transfer Capacitance VDS = -15V, VGS = 0V, f = 1.0MHz Crss -- 115.5 -- pF Switchingc Turn-On Delay Time t d(on) -- 20.5 -- Turn-On Rise Time t r -- 4.4 -- Turn-Off Delay Time t d(off) -- 42.8 -- Turn-Off Fall Time VDD = -15V, RL = 1.8Ω, ID = -1A, VGEN = -10V, RG = 3Ω tf -- 7.3 -- nS Notes: a. pulse test: PW ≤300µS, duty cycle ≤2% b. For DESIGN AID ONLY, not subject to production testing. b. Switching time is essentially independent of operating temperature.

3/3 Version: Preliminary SOP-8 Mechanical Drawing C PB D K G 1 8 A 16 9 R M F SOP-8 DIMENSION MILLIMETERS INCHES DIM MIN MAX MIN MAX. A 4.80 5.00 0.189 0.196 B 3.80 4.00 0.150 0.157 C 1.35 1.75 0.054 0.068 D 0.35 0.49 0.014 0.019 F 0.40 1.25 0.016 0.049 G 1.27BSC 0.05BSC K 0.10 0.25 0.004 0.009 M 0º 7º 0º 7º P 5.80 6.20 0.229 0.244 R 0.25 0.50 0.010 0.019

4/4 Version: Preliminary Notice Specifications of the products displa yed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product descri ption only. No license, express or implied, to any intellectual property rights is granted by this document. Exc ept as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disc laims any express or implied warranty, relating to sale and/or use of TSC product s including liability or warrantie s relating to fitness for a parti cular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medica l, life-saving, or life-sust aining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale.