TSM4410D TSC | Alldatasheet

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Technical content

Features

— Advanced trench process technology — High density cell design for ultra low on-resistance — Excellent thermal and electrical capabilities — Fully characterized avalanche voltage and current

Ordering Information

Part No. Packing Package TSM4410DCS RL Tape & Reel 2,500/per reel SOP-8 Block Diagram Absolute Maximum Rating (TA = 25 oC unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V DS 25 V Gate-Source Voltage V GS ±20 V Continuous Drain Current I D 10 Pulsed Drain Current I DM 50 A TA = 25 oC 2.5 Maximum Power Dissipation TA = 70 oC PD 1.6 W Operating Junction Temperature T J +150 oC Operating Junction and Storage Temperature Range T J, TSTG -55 to +150 oC Thermal Performance Parameter Symbol Limit Unit Junction-to-Foot Thermal Resistance R θjF 22 Junction to Ambient Thermal Resistance (PCB mounted) R θja 50 oC/W Note: 1. Maximum DC current limited by the package 2 . 1 - i n2 2oz Cu PCB board Pin assignment: 1. Source 1 8. Drain 1 2. Gate 1 7. Drain 1 3. Source 2 6. Drain 2 4. Gate 2 5. Drain 2

TSM4410D 2-2 2006/04 rev. A Electrical Characteristics (single channel) TJ = 25 oC, unless otherwise noted Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage V GS = 0V, ID = 250uA BV DSS 25 -- -- V VGS = 4.5V, ID = 8A R DS(ON) -- 13 15 m Ω Drain-Source On-State Resistance VGS = 10V, ID = 10A R DS(ON) -- 18 21 m Ω Gate Threshold Voltage V DS = VGS, ID = 250uA V GS(TH) 1.0 -- 3.0 V Zero Gate Voltage Drain Current V DS = 25V, VGS = 0V I DSS -- -- 1.0 uA Gate Body Leakage V GS = ± 20V, VDS = 0V I GSS -- -- ±100 nA Forward Transconductance V DS =10V, ID = 10A g fs -- 15 -- S Dynamic Total Gate Charge Q g -- 15 26 Gate-Source Charge Q gs -- 2.5 -- Gate-Drain Charge VDS = 15V, ID = 10A, VGS = 10V Qgd -- 3 -- nC Turn-On Delay Time t d(on) -- 20 -- Turn-On Rise Time t r -- 6 -- Turn-Off Delay Time t d(off) -- 49 -- Turn-Off Fall Time VDD = 15V, RL = 15Ω, ID = 1A, VGEN = 10V, RG = 6Ω tf -- 16 -- nS Input Capacitance C iss -- 921 -- Output Capacitance C oss -- 208 -- Reverse Transfer Capacitance VDS = 15V, VGS = 0V, f = 1.0MHz Crss -- 108 -- pF Source-Drain Diode Max. Diode Forward Current I S -- -- 3 A Diode Forward Voltage I S = 3A, VGS = 0V V SD -- 0.87 1.5 V Note: 1. pulse test: pulse width <=300uS, duty cycle <=2% 2. Negligible, Dominated by circuit inductance.

TSM4410D 3-3 2006/04 rev. A Typical Characteristics Curve (single channel) (Ta = 25 oC unless otherwise noted))

TSM4410D 4-4 2006/04 rev. A Electrical Characteristics Curve (continued)

TSM4410D 5-5 2006/04 rev. A SOP-8 Mechanical Drawing C PB D K G 1 8 A 16 9 R M F SOP-8 DIMENSION MILLIMETERS INCHES DIM MIN MAX MIN MAX A 4.80 5.00 0.189 0.196 B 3.80 4.00 0.150 0.157 C 1.35 1.75 0.054 0.068 D 0.35 0.49 0.014 0.019 F 0.40 1.25 0.016 0.049 G 1.27 (typ) 0.05 (typ) K 0.10 0.25 0.004 0.009 M 0 o 7 o 0 o 7 o P 5.80 6.20 0.229 0.244 R 0.25 0.50 0.010 0.019