TSM3N80 TSC | Alldatasheet

Document overview

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  • PDF pages: 12

Technical content

Features

  • Low R DS(ON) 3.3 Ω (Typ.)
  • Low gate charge typical @ 19nC (Typ.)
  • Low Crss typical @ 10.2pF (Typ.)
  • Improved dv/dt capability

Ordering Information

Part No. Package Packing TSM3N80CH C5G TO-251 75pcs / Tube TSM3N80CP ROG TO-252 2.5Kpcs / 13” Reel TSM3N80CZ C0 TO-220 50pcs / Tube TSM3N80CI C0 ITO-220 50pcs / Tube Note: “G” denotes for Halogen Free Absolute Maximum Rating (Ta = 25 oC unless otherwise noted) Parameter Symbol Limit Unit IPAK/DPAK ITO-220 TO-220 Drain-Source Voltage V DS 800 V Gate-Source Voltage V GS ±30 V Continuous Drain Current Tc = 25ºC ID 3 A Tc = 100ºC 1.83 A Pulsed Drain Current * I DM 12 A Single Pulse Avalanche Energy (Note 2) EAS 283 mJ Avalanche Current (Repetitive) (Note 1) I AR 3 A Repetitive Avalanche Energy (Note 1) E AR 9.4 mJ Peak Diode Recovery dv/dt (Note 3) dv/dt 4.5 V/ns Total Power Dissipation @ TC = 25 oC P TOT 94 32 94 W Operating Junction Temperature T J 150 ºC Storage Temperature Range T STG -55 to +150 oC Note: Limited by maximum junction temperature Pin Definition : 1. Gate 2. Drain 3. Source Block Diagram N-Channel MOSFET

800V N-Channel Power MOSFET 2/12 Version: B12 Thermal Performance Parameter Symbol IPAK/DPAK ITO-220 TO-220 Unit Thermal Resistance - Junction to Case R ӨJC 1.33 3.9 1.33 oC/W Thermal Resistance - Junction to Ambient R ӨJA 110 62.5 Electrical Specifications (Ta = 25 oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage V GS = 0V, I D = 250uA BV DSS 800 -- -- V Drain-Source On-State Resistance VGS = 10V, I D = 1.5A R DS(ON) -- 3.3 4.2 Ω Gate Threshold Voltage V DS = VGS , I D = 250uA V GS(TH) 2 -- 4 V Zero Gate Voltage Drain Current VDS = 800V, VGS = 0V I DSS -- -- 10 uA Gate Body Leakage V GS = ±30V, V DS = 0V I GSS -- -- ±100 nA Forward Transfer Conductance V DS = 30V, I D = 1.5A g fs -- 3.7 -- S Dynamic Total Gate Charge VDS = 640V, I D = 3A, VGS = 10V (Note 4,5) Q g -- 19 -- nC Gate-Source Charge Q gs -- 4 -- Gate-Drain Charge Q gd -- 7.6 -- Input Capacitance VDS = 25V, V GS = 0V, f = 1.0MHz C iss -- 696 -- pF Output Capacitance C oss -- 65 -- Reverse Transfer Capacitance C rss -- 10.2 -- Switching Turn-On Delay Time VGS = 10V, I D = 3A, VDD = 400V, R G =25 Ω (Note 4,5) td(on) -- 48 -- nS Turn-On Rise Time tr -- 36 -- Turn-Off Delay Time td(off) -- 106 -- Turn-Off Fall Time tf -- 41 -- Source-Drain Diode Ratings and Characteristic Source Current Integral reverse diode in the MOSFET IS -- -- 3 A Source Current (Pulse) ISM -- -- 12 A Diode Forward Voltage I S = 3A, V GS = 0V V SD -- -- 1.5 V Reverse Recovery Time VGS = 0V, I S =3A, dI F/dt = 100A/us tfr -- 370 -- nS Reverse Recovery Charge Q fr -- 1.8 -- uC Note 1: Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature Note 2: VDD = 50V, I AS =3A, L=59mH, RG =25 Ω, Starting T J=25ºC Note 3: ISD ≤4A, di/dt ≤200A/uS, V DD ≤BV DSS , Starting TJ=25ºC Note 4: Pulse test: pulse width ≤300uS, duty cycle ≤2% Note 5: Essentially Independent of Operating Temperature

800V N-Channel Power MOSFET 3/12 Version: B12 Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveform E AS Test Circuit & Waveform

800V N-Channel Power MOSFET 4/12 Version: B12 Diode Reverse Recovery Time Test Circuit & Waveform

800V N-Channel Power MOSFET 5/12 Version: B12 Electrical Characteristics Curve (Tc = 25 oC, unless otherwise noted) Output Characteristics Transfer Characteristics On-Resistance vs. Drain Current Gate Charge On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage

800V N-Channel Power MOSFET 6/12 Version: B12 Electrical Characteristics Curve (Ta = 25 oC, unless otherwise noted) Drain Current vs. Case Temperature BV DSS vs. Junction Temperature Maximum Safe Operating Area Capacitance vs. Drain-Source Voltage Maximum Safe Operating Area (ITO-220)

800V N-Channel Power MOSFET 7/12 Version: B12 Electrical Characteristics Curve (Ta = 25 oC, unless otherwise noted) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Thermal Transient Impedance, Junction-to-Ambient (ITO-220)

800V N-Channel Power MOSFET 8/12 Version: B12 TO-220 Mechanical Drawing TO-220 DIMENSION DIM MILLIMETERS INCHES MIN MAX MIN MAX A 10.00 10.50 0.394 0.413 B 3.74 3.91 0.147 0.154 C 2.44 2.94 0.096 0.116 D -- 6.35 -- 0.250 E 0.38 1.10 0.015 0.043 F 2.34 2.71 0.092 0.107 G 4.69 5.43 0.185 0.214 H 12.70 14.73 0.500 0.580 J 8.38 9.38 0.330 0.369 K 14.22 16.51 0.560 0.650 L 3.55 4.82 0.140 0.190 M 1.16 1.40 0.046 0.055 N 27.70 29.62 1.091 1.166 O 2.03 2.92 0.080 0.115 P 0.25 0.61 0.010 0.024

800V N-Channel Power MOSFET 9/12 Version: B12 ITO-220 Mechanical Drawing ITO-220 DIMENSION DIM MILLIMETERS INCHES MIN MAX MIN MAX A 10.04 10.07 0.395 0.396 B 6.20 (typ.) 0.244 (typ.) C 2.20 (typ.) 0.087 (typ.) D ∮1.40 (typ.) ∮0.055 (typ.) E 15.0 15.20 0.591 0.598 F 0.52 0.54 0.020 0.021 G 2.35 2.73 0.093 0.107 H 13.50 13.55 0.531 0.533 I 1.11 1.49 0.044 0.058 J 2.60 2.80 0.102 0.110 K 4.49 4.50 0.176 0.177 L 1.15 (typ.) 0.045 (typ.) M 3.03 3.05 0.119 0.120 N 2.60 2.80 0.102 0.110 O 6.55 6.65 0.258 0.262

800V N-Channel Power MOSFET 10/12 Version: B12 TO-251 Mechanical Drawing

800V N-Channel Power MOSFET 11/12 Version: B12 TO-252 Mechanical Drawing Unit: Millimeters

800V N-Channel Power MOSFET 12/12 Version: B12 Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale.