TSM3N100CP TSC | Alldatasheet

Document overview

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  • PDF pages: 6

Technical content

1 Version: A1606

1000V, 2.5A, 6Ω

FEATURES

  • 100% avalanche tested
  • Advanced planar process
  • Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC
  • Halogen-free according to IEC 61249-2-21 KEY PERFORMANCE PARAMETERS PARAMETER VALUE UNIT VDS 1000 V RDS(on) (max) 6 Ω Qg 19 nC

APPLICATIONS

  • AC/DC LED Lighting
  • Power Supply
  • Power Meter TO-252 (DPAK) Notes: MSL 3 (Moisture Sensitivity Level) per J-STD-020 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL Limit UNIT Drain-Source Voltage VDS 1000 V Gate-Source Voltage VGS ±30 V Continuous Drain Current (Note 1) TC = 25°C ID 2.5 A TC = 100°C 1.57 Pulsed Drain Current (Note 2) IDM 10 A Total Power Dissipation @ TC = 25°C PDTOT 99 W Single Pulse Avalanche Energy (Note 3) EAS 20 mJ Single Pulse Avalanche Current (Note 3) IAS 1.4 A Operating Junction and Storage Temperature Range TJ, TSTG - 55 to +150 °C THERMAL PERFORMANCE PARAMETER SYMBOL Limit UNIT Junction to Case Thermal Resistance RӨJC 1.26 °C/W Junction to Ambient Thermal Resistance RӨJA 62 °C/W Thermal Performance Note: RӨJA is the sum of the junction -to-case and case -to-ambient thermal resistances. The case - thermal reference is defined at the solder mounting surface of t he drain pins. R ӨJA is guaranteed by design while R ӨCA is determined by the user’s board design. RӨJA shown below for single device operation on FR-4 PCB in still air.

2 Version: A1606

ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER CONDITIONS SYMBOL MIN TYP MAX UNIT Static Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA BVDSS 1000 -- -- V Gate Threshold Voltage VDS = VGS, ID = 250µA VGS(TH) 3.5 4.5 5.5 V Gate Body Leakage VGS = ±30V, VDS = 0V IGSS -- -- ±100 nA Zero Gate Voltage Drain Current VDS = 1000V, VGS = 0V IDSS -- -- 1 µA Drain-Source On -State Resistance (Note 4) VGS = 10V, ID = 1.25A RDS(on) -- 5.6 6 Ω Dynamic (Note 5) Total Gate Charge VDS = 800V, ID = 2.5A, VGS = 10V Qg -- 19 -- nC Gate-Source Charge Qgs -- 6 -- Gate-Drain Charge Qgd -- 10 -- Input Capacitance VDS = 25V, VGS = 0V, f = 1.0MHz Ciss -- 664 -- pF Output Capacitance Coss -- 40 -- Reverse Transfer Capacitance Crss 17 Gate Resistance f = 1.0MHz, open drain Rg -- 2.2 -- Ω Switching (Note 6) Turn-On Delay Time VDD = 500V, RG = 25Ω, ID = 1.25A, VGS = 10V td(on) -- 45 -- ns Turn-On Rise Time tr -- 25 -- Turn-Off Delay Time td(off) -- 70 -- Turn-Off Fall Time tf -- 28 -- Source-Drain Diode Forward Voltage (Note 4) IS = 2.5A, VGS = 0V VSD -- -- 1.4 V Reverse Recovery Time VR = 100V, IS = 2.5A dIF/dt = 100A/μs trr -- 378 -- ns Reverse Recovery Charge Qrr -- 1.62 -- μC Notes: 1. Current limited by package 2. Pulse width limited by the maximum junction temperature 3. L = 20mH, IAS = 1.4A, VDD = 50V, RG = 25Ω, Starting TJ = 25oC 4. Pulse test: PW ≤ 300µs, duty cycle ≤ 2% 5. For DESIGN AID ONLY, not subject to production testing. 6. Switching time is essentially independent of operating temperature.

ORDERING INFORMATION

PART NO. PACKAGE PACKING TSM3N100CP ROG TO-252 (DPAK) 2,500pcs / 13” Reel

3 Version: A1606

(TC = 25°C unless otherwise noted) Output Characteristics Transfer Characteristics On-Resistance vs. Drain Current Gate-Source Voltage vs. Gate Charge On-Resistance vs. Junction Temperature Source-Drain Diode Forward Current vs. Voltage ID, Continuous Drain Current (A) ID, Continuous Drain Current (A) VDS, Drain to Source Voltage (V) VGS, Gate to Source Voltage (V) Qg, Gate Charge (nC) VGS, Gate to Source Voltage (V) RDS(on), Drain-Source On-Resistance (Ω) ID, Continuous Drain Current (A) RDS(on), Drain-Source On-Resistance (Normalized) TJ, Junction Temperature (°C) VSD, Body Diode Forward Voltage (V) IS, Body Diode Forward Current (A)

4 Version: A1606

(TC = 25°C unless otherwise noted) Capacitance vs. Drain-Source Voltage BVDSS vs. Junction Temperature Maximum Safe Operating Area Normalized Thermal Transient Impedance, Junction-to-Case (DPAK/IPAK) C, Capacitance (pF) VDS, Drain to Source Voltage (V) BVDSS (Normalized) Drain-Source Breakdown Voltage (V) TJ, Junction Temperature (°C) ID, Continuous Drain Current (A) VDS, Drain to Source Voltage (V) Continuous Drain Current (A) 100 Normalized Effective Transient Thermal Impedance 10-5 10-4 10-3 10-2 10-2 10-1 10-3 Square Wave Pulse Duration (s) Duty=0.5 Duty=0.2 Duty=0.1 Duty=0.05 Duty=0.02 Duty=0.01 Single pulse 10-1 101 SINGLE PULSE RӨJC=1.26˚C/W Notes: Duty = t1 / t2 TJ = TC + PDM x ZӨJC x RӨJC

5 Version: A1606

PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters) TO-252 SUGGESTED PAD LAYOUT MARKING DIAGRAM Y = Year Code M = Month Code for Halogen Free Product O =Jan P =Feb Q =Mar R =Apr S =May T =Jun U =Jul V =Aug W =Sep X =Oct Y =Nov Z =Dec L = Lot Code (1~9, A~Z)

6 Version: A1606

Specifications of the products displayed herein are sub ject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life -saving, o r life -sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale.