TSM35N03 TSC | Alldatasheet

Document overview

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Technical content

Features

— Advanced trench process technology — High Density Cell Design for Ultra Low On-Resistance — Fully Characterized Avalanche Voltage and Current — Specially Designed for DC/DC Converters and Motor Drivers Block Diagram

Ordering Information

Part No. Packing Package TSM35N03CP Tape & Reel TO-252 Absolute Maximum Rating (TA = 25 oC unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V DS 30 V Gate-Source Voltage V GS ±20 V Continuous Drain Current I D 50 Pulsed Drain Current I DM 350 A TA = 25 oC 57 W Maximum Power Dissipation TA = 100 oC PD

23 W/ oC

Operating Junction Temperature T J +150 oC Operating Junction and Storage Temperature Range T J, TSTG -55 to +150 oC Single Pulse Drain to Source Avalanche Energy (VDD = 100V, VGS=10V, IAS=2A, L=10mH, RG=25Ω) EAS 300 mJ Thermal Performance Parameter Symbol Limit Unit Lead Temperature (1/8” from case) T L 10 S Junction-to-case Thermal Resistance R θjc 2.2 Junction to Ambient Thermal Resistance (PCB mounted) R θja 50 oC/W Note: 1. Maximum DC current limited by the package 2 . 1 - i n2 2oz Cu PCB board Pin assignment: 1. Gate 2. Drain 3. Source

TSM35N03 2-3 2005/04 rev. A

Electrical Characteristics

TJ = 25 oC, unless otherwise noted Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage V GS = 0V, ID = 250uA BV DSS 30 -- -- V Drain-Source On-State Resistance V GS = 4.5V, ID = 30A R DS(ON) -- 10.0 13.0 m Ω Drain-Source On-State Resistance V GS = 10V, ID = 30A R DS(ON) -- 6.5 8.5 m Ω Gate Threshold Voltage V DS = VGS, ID = 250uA V GS(TH) 1.0 1.6 3.0 V Zero Gate Voltage Drain Current V DS = 24V, VGS = 0V I DSS -- -- 1.0 uA Gate Body Leakage V GS = ± 20V, VDS = 0V I GSS -- -- ± 100 nA Gate Resisrance Rg -- -- -- Forward Transconductance V DS =10V, ID = 35A g fs -- -- -- S Dynamic Total Gate Charge Q g -- 24 -- Gate-Source Charge Q gs -- 5.4 -- Gate-Drain Charge VDS = 15V, ID = 35A, VGS = 10V Qgd -- 4.0 -- nC Turn-On Delay Time t d(on) -- 15 -- Turn-On Rise Time t r -- 3.2 -- Turn-Off Delay Time t d(off) -- 36 -- Turn-Off Fall Time VDD = 15V, RL = 15Ω, ID = 1A, VGEN = 10V, RG = 24Ω tf -- 4.8 -- nS Input Capacitance C iss -- 1940 -- Output Capacitance C oss -- 312 -- Reverse Transfer Capacitance VDS = 15V, VGS = 0V, f = 1.0MHz Crss -- 122 -- pF Source-Drain Diode Max. Diode Forward Current I S -- -- 50 A Diode Forward Voltage I S = 20A, VGS = 0V V SD -- 0.87 1.5 V Note: 1. pulse test: pulse width <=300uS, duty cycle <=2% 2. Negligible, Dominated by circuit inductance.

TSM35N03 3-3 2005/04 rev. A TO-252 Mechanical Drawing B CD A F G I H EJ TO-252 DIMENSION MILLIMETERS INCHES DIM MIN MAX MIN MAX A 6.570 6.840 0.259 0.269 B 9.250 10.400 0.364 0.409 C 0.550 0.700 0.022 0.028 D 2.560 2.670 0.101 0.105 E 2.300 2.390 0.090 0.094 F 0.490 0.570 0.019 0.022 G 1.460 1.580 0.057 0.062 H 0.520 0.570 0.020 0.022 I 5.340 5.550 0.210 0.219 J 1.460 1.640 0.057 0.065