TSM3443_08 TSC | Alldatasheet
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hI) SEMICONDUCTOR TSM3443 20V P-Channel MOSFET e) RoHS COMPLIANCE SOT-26 _Pin Definition: PRODUCT SUMMARY 654 1. Drain 6. Drain ~Se¢ 2. Drain 5, Drain Vos(V) | Roson(mQ) | __‘Ip (A) a | 3.Gate 4. Source 60 @ VGS =-4.5V “47 20 - - 123 100 @ VGS = -2.5V -3.8 Features Block Diagram e Advance Trench Process Technology © High Density Cell Design fPor Ultra Low On-resistance ms Application e Load Switch e PA Switch @G cam
Ordering Information
Part No. Packing TSM3443CX6 RF SOT-26 3Kpces /7” Reel (1,2,5,6)D TSM3443CX6 RFG SOT-26 3Kpes /7” Reel P-Channel MOSFET Note: “G” denote for Halogen Free Product Absolute Maximum Rating (Ta = 25°C unless otherwise noted) Parameter | symbol | Limit | unit Drain-Source Voltage v Gate-Source Voltage v Continuous Drain Current, Vos @4.5V. |» | «a7 | A Pulsed Drain Current, Vos @4.5V [tw | to Continuous Source Current (Diode Conduction)*” ee ee A fra = 25°C Maximum Power Dissipation aa w fra = 70°C Operating Junction Temperature °c Operating Junction and Storage Temperature Range - 55 to +150 °c Thermal Performance Parameter | symbol [| Limit | unit Junction to Case Thermal Resistance °CIW. Junction to Ambient Thermal Resistance (PCB mounted) [| Re» | so iz “cw Notes: a, Pulse width limited by the Maximum junction temperature b. Surface Mounted on FR4 Board, t < 5 sec. 1/6 Version: CO7
] SEMICONDUCTOR TSM3443 20V P-Channel MOSFET Pe) RoHS COMPLIANCE Electrical Specifications (Ta = 25°C unless otherwise noted) Static Drain-Source Breakdown Voltage _| Vos= OV, Ip=-250uA | BVoss_| -20 | - | - | v Gate Threshold Voltage Vos=Vos.lo=-250uA_| Vesmy | -06 | ~- | -14 |v Gate Body Leakage Vos=#12V,Vps=0V_ | toss | ~ | =~ | +100 | na Zero Gate Voltage Drain Current Vos = -20V, Ves = OV [ss | - | - | -10 | HA On-State Drain Current* Vos=-5V, Vos=-4.5V_ | loom | -15 | - | ~- | A istance® LVO8=-4:5V, lo= -4.7A | - | 43 | 60 | Drain-Source On-State Resistance’ Rosion) mQ Forward Transconductance* Vos = -10V, Ip = -4.7A | o | - | 1 | - | Ss Diode Forward Voltage b=-17AVos=ov [| Vo | ~ | oe | 42 |v Dynamic” Gate-Drain Charge _— | Qs | - [| 19 | ~ | OuputCapactance aaa Reverse Transfer Capacitance | Gee [| - | o | - | Switching® Tum-On Delay Tine Vaoatov mown, Pua [=| 2 [3%] Ip=-1A, Voen = -4.5V, ns Turn-Off Delay Time R= 60 | tw [| ~- | 45 | 70 | Turn-Off Fall Time ° p « J - [2 | 50 | Notes: a, pulse test: PW <300uS, duty cycle <2% b. For DESIGN AID ONLY, not subject to production testing. b. Switching time is essentially independent of operating temperature. Voo ton tot Ro ta{on} tr taiofh 4 tr Vin 90% os 0. Vout Output, Vout 10% 10%, Voen 3 INVERTED G buT Tl B 90% 50% 50% a Input, Vin 10% PULSE WIDTH Switching Test Circuit Switchin Waveforms 2/6 Version: CO7
i] SemiConoucToR TSM3443 (a) RoHS 20V P-Channel MOSFET COMPLIANCE Electrical Characteristics Curve (Ta = 25°C, unless otherwise noted) Output Characteristics Transfer Characteristics 20; 1] 20 7 7] Pele) Jeo | — P acl = 16 = 16 y ofr | | | lg | ar | 5 Ee £ 12 L a) (eee eee eee a s+ ae TT 8 | a) ee ee Ae “Berrre) “OO C 2 3 4 A OOS 10 1520 25 30 35 40 Vos - Drain-to-Source Voltage (V) Ves - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current Gate Charge
00 Ss 5
ise 4 ID=47A 2 / o ce] zy | | | | ett 2 3 : pt LEE | | | | ° 2 : one eVI LI TI IT e 3 oo oF ry r7 . 7] rr o 1 2 3 4 5 6 7 8 lo - Drain Current (A) Qg - Total Gate Charge (nC) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 1.6 30 e vsfvee +t} ttt i pee Cee g2t++ +l § GEE PAE eevtt TT Ler tT | .———-.- 52,5 | 1 7 1 tt a | SCOT 3 J] 260 B caper | | Tt tT - eo | 50-25 0 25 50 75 100 125 150 0 02 04 06 08 1.0 12 14 16 Tj - Junction Temperature (°C) Vso - Source-to-Drain Voltage (V) 3/6 Version: CO7
Er] SemiConoucToR TSM3443 a) RoHS 20V P-Channel MOSFET COMPLIANCE Electrical Characteristics Curve (Ta = 25°C, unless otherwise noted) On-Resistance vs. Gate-Source Voltage Threshold Voltage | LTT TTT RCO seer sg “ PCRS beet ii | | | ot 111 TTT I I 0 1 2 3 4 5 60 -25 0 26 50 75 100 125 150 Ves - Gate-to-Source Voltage (V) Tj - Junction Temperature (°C) Single Pulse Power 50, = s0-\\ a a a “CAINE oLtIlING| ines 0 [ania s ireee 10° 10? 10" 1 100 600 Tiime (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient LUT TTT J UII EEUU eo Ptate 0s = ee SE ce ct eee eS BCC mm tt § op er I BE 0s Sa ae ae i See eee eee eee ee eet [eu oe seca acit sail ee at eee oo SAT MiSeeses MIT TTTMIME TV LTTTINT TTI Sores 10“ 10° 10? 101 1 10 100 600 Square Wave Pulse Duration (sec) 4/6 Version: CO7
% SEMICONDUCTOR TSM3443 (a) RoHS 20V P-Channel MOSFET COMPLIANCE SOT-26 Mechanical Drawing D = eB oI mn Lk | min | typ [ max | MIN | tye | MAX | fr] Pitt} 1 ole m HH ,[-F Leo} - [oto | 000 | | o.00s0 | i J [6 [035 | 040 | 0.50 | 0.0138 | 0.0167 | 0.0197 | J Marking Diagram 6 5 4 43 = Device Code FH FA AA Y = Year Code Pi) Tt M = Month Code 4 3YML (A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, l=Sep, J=Oct, K=Nov, L=Dec) bd = Month Code for Halogen Free Product Ly) LJ LJ (O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep, X=Oct, Y=Nov, Z=Dec) L =Lot Code 5/6 Version: CO7
95 SEMICONDUCTOR TSM3443
(a) RoHS 20V P-Channel MOSFET COMPLIANCE Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 6/6 Version: CO7