TSM3441 TSC | Alldatasheet
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Technical content
TSM3441 1-3 2005/11 rev. B TSM3441 -20V P-Channel Enhancement-Mode MOSFET SOT-26 VDS = -20V RDS (on), Vgs @ -4.5V, Ids @ -3A =100mΩ RDS (on), Vgs @ -2.5V, Ids @ -2.0A =150mΩ Features Advanced trench process technology High density cell design for ultra low on-resistance Fully Characterized Avalanche Voltage and Current Improved Shoot-Through FOM Ordering Information Part No. Packing Package TSM3441CX6 Tape & Reel 3,000/per reel SOT-26 Block Diagram P-Channel MOSFET
TSM3441 2-3 2005/11 rev. B Turn-On Delay Time td(on) -- 5 25 Turn-On Rise Time tr -- 19 60 Turn-Off Delay Time td(off) -- 95 110 Turn-Off Fall Time VDD = - 6V, RL = 6Ω, ID = - 1A, VGEN = - 4.5V, RG = 6Ω tf -- 65 80 nS Input Capacitance Ciss -- 447 -- Output Capacitance Coss -- 127 -- Reverse Transfer Capacitance VDS = - 6V, VGS = 0V, f = 1.0MHz Crss -- 80 -- pF
TSM3441 3-3 2005/11 rev. B SOT-26 Mechanical Drawing