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60V N-Channel Power MOSFET 1/9 Version: D14 TO-220 ITO-220 Key Parameter Performance Parameter Value Unit VDS 60 V RDS(on) (max) VGS = 10V 34 mΩ VGS = 4.5V 40 Qg 16.6 nC TO-251S (IPAK) TO-252 (DPAK)

Ordering Information

Part No. Package Packing TSM340N06CI C0G ITO-220 50pcs / Tube TSM340N06CZ C0G TO-220 50pcs / Tube TSM340N06CH X0G TO-251S 75pcs / Tube TSM340N06CP ROG TO-252 2.5kpcs / 13” Reel Note: “G” denotes for Halogen- and Antimony-free as those which contain <900ppm bromine, <900ppm chlorine (<1500pp m total Br + Cl) and <1000ppm antimony compounds Absolute Maximum Ratings (Tc = 25°C unless otherwise noted) Parameter Symbol Limit Unit IPAK/DPAK ITO-220 TO-220 Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V Continuous Drain Current (Note 1) Tc = 25°C ID 30 A Tc = 100°C 19 A Pulsed Drain Current (Note 2) IDM 120 A Single Pulse Avalanche Energy (Note 3) EAS 24 mJ Single Pulse Avalanche Current (Note 2) IAS 22 A Total Power Dissipation @ TC = 25°C PD 40 27 66 W Operating Junction Temperature TJ 150 °C Storage Temperature Range TSTG -55 to +150 °C Pin Definition: 1. Gate 2. Drain 3. Source Block Diagram N-Channel MOSFET

60V N-Channel Power MOSFET 2/9 Version: D14 Thermal Performance Parameter Symbol Limit Unit IPAK/DPAK ITO-220 TO-220 Thermal Resistance - Junction to Case RӨJC 3.1 4.7 1.9 °C/W Thermal Resistance - Junction to Ambient RӨJA 62 °C/W Electrical Specifications (TC = 25℃ unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA BVDSS 60 -- -- V Drain-Source On-State Resistance VGS = 10V, ID = 15A RDS(ON) -- 28 34 mΩ VGS = 4.5V, ID = 10A -- 33 40 Gate Threshold Voltage VDS = VGS, ID = 250µA VGS(TH) 1.2 1.7 2.5 V Zero Gate Voltage Drain Current VDS = 60V, VGS = 0V IDSS -- -- 1 µA Gate Body Leakage VGS = ±20V, VDS = 0V IGSS -- -- ±100 nA Forward Transconductance VDS = 10V, ID = 8A gfs -- 8 -- S Dynamic Total Gate Charge (Note 4,5) VDS = 30V, ID = 20A, VGS = 10V Qg -- 16.6 -- nC Gate-Source Charge (Note 4,5) Qgs -- 2.2 -- Gate-Drain Charge (Note 4,5) Qgd -- 3.9 -- Input Capacitance VDS = 30V, VGS = 0V, f = 1MHz Ciss -- 1180 -- pF Output Capacitance Coss -- 68 -- Reverse Transfer Capacitance Crss -- 45 -- Gate Resistance VGS=0V, VDS=0V, f=1MHz Rg -- 2.1 -- Ω Switching Turn-On Delay Time (Note 4,5) VDD=30V , VGS=10V , RG=6W, ID=-1A td(on) -- 4.6 -- ns Turn-On Rise Time (Note 4,5) tr -- 14.8 -- Turn-Off Delay Time (Note 4,5) td(off) -- 27.2 -- Turn-Off Fall Time (Note 4,5) tf -- 7.8 -- Source-Drain Diode Ratings and Characteristic Continuous Drain-Source Diode VG=VD=0V , Force Current IS -- -- 25 A Pulse Drain-Source Diode ISM -- -- 100 A Diode-Source Forward Voltage VGS = 0V, IS = 1A VSD -- -- 1 V Reverse Recovery Time (Note 4) VGS = 0V, IS = 1A dIF/dt = 100A/µs trr -- 17 -- ns Reverse Recovery Charge (Note 4) Qrr -- 12 -- nC Note: 1. Limited by maximum junction temperature 2. Pulse width limited by safe operating area 3. L = 0.1mH, IAS = 22A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 4. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2% 5. Switching time is essentially independent of operating temperature.

60V N-Channel Power MOSFET 3/9 Version: D14 Electrical Characteristics Curve Continuous Drain Current vs. Tc Normalized RDSON vs. TJ Normalized Vth vs. TJ Gate Charge Waveform Normalized Transient Impedance (ITO-220) Maximum Safe Operation Area (ITO-220) ID, Continuous Drain Current (A) TC, Case Temperature (°C) TJ, Junction Temperature (°C) Normalized On Resistance (mW) TJ , Junction Temperature (°C) Normalized Gate Threshold Voltage Qg, Gate Charge (nC) VGS, Gate to Source Voltage (V) Normalized Thermal Response (RθJC) Square Wave Pulse Duration (s) ID, Continuous Drain Current (A) VDS , Drain to Source Voltage (V)

60V N-Channel Power MOSFET 4/9 Version: D14 Electrical Characteristics Curve Normalized Transient Impedance (TO-220) Maximum Safe Operation Area (TO-220) Normalized Transient Impedance (TO-251S) Maximum Safe Operation Area (TO-251S) Normalized Transient Impedance (TO-252) Maximum Safe Operation Area (TO-252) Normalized Thermal Response (RθJC) Square Wave Pulse Duration (s) ID, Continuous Drain Current (A) VDS, Drain to Source Voltage (V) Normalized Thermal Response (RθJC) Square Wave Pulse Duration (s) ID, Continuous Drain Current (A) VDS, Drain to Source Voltage (V) Normalized Thermal Response (RθJC) Square Wave Pulse Duration (s) ID, Continuous Drain Current (A) VDS, Drain to Source Voltage (V)

60V N-Channel Power MOSFET 5/9 Version: D14 TO-220 Mechanical Drawing Unit: Millimeters Marking Diagram G = Halogen Free Y = Year Code WW = Week Code (01~52) F = Factory Code

60V N-Channel Power MOSFET 6/9 Version: D14 ITO-220 Mechanical Drawing Unit: Millimeters Marking Diagram G = Halogen Free Y = Year Code WW = Week Code (01~52) F = Factory Code

60V N-Channel Power MOSFET 7/9 Version: D14 TO-251S Mechanical Drawing Unit: Millimeters Marking Diagram Y = Year Code M = Month Code for Halogen Free Product (O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep, X=Oct, Y=Nov, Z=Dec) L = Lot Code

60V N-Channel Power MOSFET 8/9 Version: D14 TO-252 Mechanical Drawing Unit: Millimeters Marking Diagram Y = Year Code M = Month Code for Halogen Free Product (O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep, X=Oct, Y=Nov, Z=Dec) L = Lot Code

60V N-Channel Power MOSFET 9/9 Version: D14 Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC ’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical , life -saving, or life -sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale.