TSM2301_1 TSC | Alldatasheet
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Technical content
TSM2301 1-6 2003/12 rev. C TSM2301 -20V P-Channel Enhancement Mode MOSFET VDS = -20V RDS (on), Vgs @ -4.5V, Ids @ -2.8A =130mΩ RDS (on), Vgs @ -2.5V, Ids @ -2.0A =190mΩ Features Advanced trench process technology High density cell design for ultra low on-resistance Excellent thermal and electrical capabilities Compact and low profile SOT-23 package Block Diagram Pin assignment: 1. Gate 2. Source 3. Drain
TSM2301 2-6 2003/12 rev. C nC Turn-On Delay Time td(on) -- 5 25 Turn-On Rise Time tr -- 19 60 Turn-Off Delay Time td(off) -- 95 110 Turn-Off Fall Time VDD = -6V, RL = 6Ω, ID = -1A, VGEN = -4.5V, RG = 6Ω tf -- 65 80 nS Input Capacitance Ciss -- 447 -- Output Capacitance Coss -- 127 -- Reverse Transfer Capacitance VDS = -6V, VGS = 0V, f = 1.0MHz Crss -- 80 -- pF
TSM2301 3-6 2003/12 rev. C Typical Characteristics Curve (Ta = 25 oC unless otherwise noted)
TSM2301 4-6 2003/12 rev. C Typical Characteristics Curve (Ta = 25 oC unless otherwise noted)
TSM2301 5-6 2003/12 rev. C Marking Indication P/N: TSM2301CX Package: SOT-23 * 01 = Product code for TSM2301 * YQL = Date Code Y = Year Code Q = Quarter Code (Q1=A, Q2=B, Q3=C, Q4=D) L = Lot Number
TSM2301 6-6 2003/12 rev. C SOT-23 Mechanical Drawing B A CD E F G B A CD E F G