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-100V P-Channel Power MOSFET 1/7 Version: A14 TO-220 ITO-220 Key Parameter Performance Parameter Value Unit VDS -100 V RDS(on) (max) VGS = -10V 140 mΩ VGS = -4.5V 170 Qg 42 nC Application l Networking l Load Switch l LED applications Block Diagram P-Channel MOSFET

Ordering Information

Part No. Package Packing TSM22P10CZ C0G TO-220 50pcs / Tube TSM22P10CI C0G ITO-220 50pcs / Tube Note: “G” denotes for Halogen- and Antimony-free as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds Absolute Maximum Ratings (Tc = 25°C unless otherwise noted) Parameter Symbol Limit Unit TO-220 ITO-220 Drain-Source Voltage VDS -100 V Gate-Source Voltage VGS ±25 V Continuous Drain Current (Note 1) Tc = 25°C ID -22 A Tc = 100°C -14 A Pulsed Drain Current (Note 2) IDM -88 A Power Dissipation @ TC = 25°C PD 125 48 W Operating Junction Temperature TJ 150 °C Storage Temperature Range TSTG -55 to +150 °C Thermal Performance Parameter Symbol Limit Unit TO-220 ITO-220 Thermal Resistance - Junction to Case RӨJC 1.0 2.6 °C/W Thermal Resistance - Junction to Ambient RӨJA 62 Pin Definition: 1. Gate 2. Drain 3. Source

-100V P-Channel Power MOSFET 2/7 Version: A14 Electrical Specifications (TC = 25°C unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage VGS = 0V, ID = -250µA BVDSS -100 -- -- V Drain-Source On-State Resistance VGS = -10V, ID = -20A RDS(ON) -- 115 140 mΩ VGS = -4.5V, ID = -10A -- 130 170 Gate Threshold Voltage VDS = VGS, ID = -250µA VGS(TH) -1 -- -3 V Zero Gate Voltage Drain Current VDS = -100V, VGS = 0V IDSS -- -- -1 µA Gate Body Leakage VGS = ±25V, VDS = 0V IGSS -- -- ±100 nA Dynamic Total Gate Charge (Note 3,4) VDS = -50V, ID = -20A, VGS = -10V Qg -- 42 -- nC Gate-Source Charge (Note 3,4) Qgs -- 8 -- Gate-Drain Charge (Note 3,4) Qgd -- 5.6 -- Input Capacitance VDS = -30V, VGS = 0V, f = 1.0MHz Ciss -- 2250 -- pF Output Capacitance Coss -- 130 -- Reverse Transfer Capacitance Crss -- 90 -- Switching Turn-On Delay Time (Note 3,4) VDD = -30V, ID = -1A, VGS = -10V, RG =6Ω td(on) -- -- -- ns Turn-On Rise Time (Note 3,4) tr -- -- -- Turn-Off Delay Time (Note 3,4) td(off) -- -- -- Turn-Off Fall Time (Note 3,4) tf -- -- -- Source-Drain Diode Ratings and Characteristic Maximum Continuous Drain-Source Diode Forward Current Integral reverse diode in the MOSFET IS -- -- -22 A Maximum Pulse Drain-Source Diode Forward Current ISM -- -- -88 A Diode-Source Forward Voltage VGS = 0V, IS = -1A VSD -- -- -1.1 V Note: 1. Limited by maximum junction temperature 2. Pulse width limited by safe operating area 3. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2% 4. Switching time is essentially independent of operating temperature.

-100V P-Channel Power MOSFET 3/7 Version: A14 Electrical Characteristics Curve Continuous Drain Current vs. TC Normalized RDS(on) vs. TJ Threshold Voltage vs. Junction Temperature Gate Charge Waveform Maximum Safe Operating Area (TO-220) Maximum Safe Operating Area (ITO-220) -ID, Continuous Drain Current (A) TC, Case Temperature (°C) Normalized On Resistance (mW) TJ, Junction Temperature (°C) Normalized Gate Threshold Voltage (V) TJ, Junction Temperature (°C) Qg, Gate Charge (nC) -VGS, Gate to Source Voltage (V) -ID, Continuous Drain Current (A) -VDS, Drain to Source Voltage (V) -ID, Continuous Drain Current (A) -VDS, Drain to Source Voltage (V)

-100V P-Channel Power MOSFET 4/7 Version: A14 Electrical Characteristics Curve Normalized Thermal Transient Impedance (TO-220) Normalized Thermal Transient Impedance (ITO-220) Normalized Thermal Response (RθJC) Square Wave Pulse Duration (s) Normalized Thermal Response (RθJC) Square Wave Pulse Duration (s)

-100V P-Channel Power MOSFET 5/7 Version: A14 TO-220 Mechanical Drawing Unit: Millimeters Marking Diagram G = Halogen Free Product Y = Year Code WW = Week Code (01~52) F = Factory Code

-100V P-Channel Power MOSFET 6/7 Version: A14 ITO-220 Mechanical Drawing Unit: Millimeters Marking Diagram G = Halogen Free Product Y = Year Code WW = Week Code (01~52) F = Factory Code

-100V P-Channel Power MOSFET 7/7 Version: A14 Notice Specifications of the products displayed herein are subject t o change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC ’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in m edical, life -saving, or life -sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale.