TSM200N03D TSC | Alldatasheet

Document overview

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Technical content

Document Number:DS_P0000166 1 Version: A15 Dual N-Channel MOSFET 30V, 20A, 20mΩ

FEATURES

  • Fast switching
  • 100% avalanche tested
  • Pb-free plating
  • RoHS compliant
  • Halogen-free package APPLICATION
  • Power Supply
  • Motor COntrol KEY PERFORMANCE PARAMETERS PARAMETER VALUE UNIT VDS 30 V RDS(on) (max) VGS = -10V 20 mΩ VGS = -4.5V 30 Qg 4.1 nC PDFN33 Dual Dual N-Channel MOSFET Notes: Moisture sensitivity level: level 3. Per J-STD-020 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V Continuous Drain Current (Note 1) TC = 25°C ID A TC = 100°C 13 Pulsed Drain Current (Note 2) IDM 80 A Total Power Dissipation @ TC = 25°C PDTOT 20 W Single Pulsed Avalanche Energy (Note 3) EAS 14 mJ Single Pulsed Avalanche Current (Note 3) IAS 17 A Operating Junction and Storage Temperature Range TJ, TSTG - 55 to +150 °C THERMAL PERFORMANCE PARAMETER SYMBOL LIMIT UNIT Junction to Case Thermal Resistance RӨJC 6.4 °C/W Junction to Ambient Thermal Resistance RӨJA 62 °C/W Notes: RӨJA is the sum of the junction -to-case and case-to-ambient thermal resistances. The case thermal reference is defined at the solder mounting surface of the drain pins. R ӨJA is guaranteed by design while R ӨCA is determined by the user’s board design. RӨJA shown below for single device operation on FR-4 PCB in still air

Document Number:DS_P0000166 2 Version: A15 ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER CONDITIONS SYMBOL MIN TYP MAX UNIT Static (Note 4) Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA BVDSS 30 -- -- V Gate Threshold Voltage VDS = VGS, ID = 250µA VGS(TH) 1.2 1.5 2.5 V Gate Body Leakage VGS = ±20V, VDS = 0V IGSS -- -- ±100 nA Zero Gate Voltage Drain Current VDS = 30V, VGS = 0V IDSS -- -- 1 µA VDS = 24V, Tc = 125ºC -- -- 10 Drain-Source On-State Resistance VGS = 10V, ID = 10A RDS(on) -- 17 20 mΩ VGS = 4.5V, ID = 6A -- 23 30 Forward Transconductance VDS = 5V, ID = 6A gfs -- 13 -- S Dynamic (Note 5) Total Gate Charge VDS = 15V, ID = 8A, VGS = 4.5V Qg -- 4.1 -- nC Gate-Source Charge Qgs -- 1 -- Gate-Drain Charge Qgd -- 2.1 -- Input Capacitance VDS = 25V, VGS = 0V, f = 1.0MHz Ciss -- 345 -- pF Output Capacitance Coss -- 55 -- Reverse Transfer Capacitance Crss -- 32 -- Switching (Note 6) Turn-On Delay Time VDD = 15V, ID = 1A, RGEN =6Ω td(on) -- 2.8 -- ns Turn-On Rise Time tr -- 7.2 -- Turn-Off Delay Time td(off) -- 15.8 -- Turn-Off Fall Time tf -- 4.6 -- Source-Drain Diode (Note 4) Maximum Continuous Drain-Source Diode Forward Current Integral reverse diode in the MOSFET IS -- -- 20 A Maximum Pulse Drain-Source Diode Forward Current ISM -- -- 80 A Diode-Source Forward Voltage VGS = 0V, IS = 1A VSD -- -- 1 V Notes: 1. Current limited by package 2. Pulse width limited by the maximum junction temperature 3. L = 0.1mH, IAS = 17A, VDD = 25V, RG = 25Ω, Starting TJ = 25oC 4. Pulse test: PW ≤ 300µs, duty cycle ≤ 2% 5. For DESIGN AID ONLY, not subject to production testing. 6. Switching time is essentially independent of operating temperature.

Document Number:DS_P0000166 3 Version: A15

ORDERING INFORMATION

PART NO. PACKAGE PACKING TSM200N03DPQ33 RGG PDFN33 5Kpcs / 13”Reel Note: 1. Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC 2. Halogen-free according to IEC 61249-2-21 definition

Document Number:DS_P0000166 4 Version: A15 CHARACTERISTICS CURVES (TC = 25°C unless otherwise noted) Continuous Drain Current vs. TC Normalized RDS(ON) vs. TJ Normalized Vth vs. TJ Gate Charge Normalized Transient Impedance Maximum Safe Operation Area -ID , Continuous Drain Current (A) TC, Case Temperature (°C) TJ, Junction Temperature (°C) Normalized On Resistance(m) TJ, Junction Temperature (°C) Qg, Gate Charge (nC) Normalized Gate Threshold Voltage (V) -VGS, Gate to Source Voltage (V) Square Wave PulseDuration (s) Normalized Thermal Response (RΘJC) -ID Continuous Drain Current (A) VDS, Drain to Source Voltage (V)

Document Number:DS_P0000166 5 Version: A15 PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters) PDFN33 Dual SUGGESTED PAD LAYOUT (Unit: Millimeters) MARKING DIAGRAM Y = Year Code M = Month Code for Halogen Free Product O =Jan P =Feb Q =Mar R =Apr \` S =May T =Jun U =Jul V =Aug W =Sep X =Oct Y =Nov Z =Dec L = Lot Code (1~9, A~Z)

Document Number:DS_P0000166 6 Version: A15 Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life -saving, or life -sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and a gree to fully indemnify TSC for any damages resulting from such improper use or sale.