TSM032NH04CR TSC | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 7
Technical content
1 Version: D2207
FEATURES
- Ultra-low On-resistance
- Wettable Flank leads for Enhanced AOI
- 100% UIS and Rg tested
- 175°C Operating Junction Temperature
- RoHS Compliant
- Halogen-Free according to IEC 61249-2-21
APPLICATIONS
- DC-DC Converters
- Solenoid and Motor Drivers
- Load Switch PRODUCT SUMMARY PARAMETER VALUE UNIT VDS 40 V RDS(on) (max) VGS = 10V 3.2 mΩ VGS = 7V 3.8 Qg VGS = 10V 45 nC Note: MSL 1 (Moisture Sensitivity Level) per J-STD-020 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 40 V Gate-Source Voltage VGS ±20 V Continuous Drain Current, Silicon limited TC = 25°C ID 144 A Continuous Drain Current (Note 1) TC = 25°C ID A TC = 100°C 81 TA = 25°C 23 Pulsed Drain Current IDM 324 A Single Pulse Avalanche Current (Note 2) IAS 32.4 A Single Pulse Avalanche Energy (Note 2) EAS 157 mJ Total Power Dissipation TC = 25°C PD 115 W TC = 125°C 38 Operating Junction and Storage Temperature Range TJ, TSTG -55 to +175 °C THERMAL RESISTANCE PARAMETER SYMBOL MAXIMUM UNIT Thermal Resistance – Junction to Case RӨJC 1.3 °C/W Thermal Resistance – Junction to Ambient RӨJA 50 °C/W Note: RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The case-thermal reference is defined at the solder mounting surface of the drain pins. RӨJC is guaranteed by design while RӨCA is determined by the user’s board design. PDFN56U
2 Version: D2207
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) PARAMETER CONDITIONS SYMBOL MIN TYP MAX UNIT Static Drain-Source Breakdown Voltage VGS = 0V, ID = 1mA BVDSS 40 -- -- V Gate Threshold Voltage VGS = VDS, ID = 250µA VGS(TH) 2.4 3 3.6 V Gate-Source Leakage Current VGS = ±20V, VDS = 0V IGSS -- -- ±100 nA Drain-Source Leakage Current VGS = 0V, VDS = 40V IDSS -- -- 1 µA VGS = 0V, VDS = 40V Drain-Source On-State Resistance (Note 3) VGS = 10V, ID = 40A RDS(on) -- 2.7 3.2 mΩ VGS = 7V, ID = 40A -- 3.2 3.8 Forward Transconductance (Note 3) VDS = 10V, ID = 10A gfs -- 73 -- S Dynamic Total Gate Charge VGS = 7V, VDS = 20V, nC Total Gate Charge VGS = 10V, VDS = 20V, ID = 23A Qg -- 45 -- Gate-Source Charge Qgs -- 14 -- Gate-Drain Charge Qgd -- 9.5 -- Input Capacitance VGS = 0V, VDS = 25V, f = 1.0MHz Ciss -- 2896 -- pF Output Capacitance Coss -- 562 -- Reverse Transfer Capacitance Crss -- 32 -- Gate Resistance f = 1.0MHz Rg -- 0.7 -- Ω Switching (Note 4) Turn-On Delay Time VGS = 10V, VDS = 20V, ID = 23A, RG = 3.3Ω td(on) -- 15.7 -- nS Rise Time tr -- 71 -- Turn-Off Delay Time td(off) -- 28.6 -- Fall Time tf -- 13 -- Source-Drain Diode Diode Forward Voltage (Note 3) VGS = 0V, IS = 40A VSD -- -- 1.1 V Reverse Recovery Time IS = 23A, di/dt = 100A/μs trr -- 42 -- nS Reverse Recovery Charge Qrr -- 43 -- nC Notes: 1. Package current limit. 2. L = 0.3mH, VGS = 10V, RG = 25Ω, Starting TJ = 25°C. 3. Pulse test: Pulse Width ≤ 300µs, duty cycle ≤ 2%. 4. Switching time is essentially independent of operating temperature.
ORDERING INFORMATION
ORDERING CODE PACKAGE PACKING TSM032NH04CR RLG PDFN56U 2,500pcs / 13” Reel
3 Version: D2207
(TA = 25°C unless otherwise noted) Output Characteristics Transfer Characteristics On-Resistance vs. Drain Current Gate-Source Voltage vs. Gate Charge On-Resistance vs. Junction Temperature On-Resistance vs. Gate-Source Voltage ID, Drain Current (A) VGS, Gate to Source Voltage (V) VDS, Drain to Source Voltage (V) RDS(on), Drain-Source On-Resistance (mΩ) ID, Drain Current (A) VGS, Gate to Source Voltage (V) Qg, Gate Charge (nC) RDS(on), Drain-Source On-Resistance (Normalized) TJ, Junction Temperature (°C) RDS(on), Drain-Source On-Resistance (mΩ) VGS, Gate to Source Voltage (V) ID, Drain Current (A) 0.00 1.00 2.00 3.00 4.00 5.00 10 15 20 25 30 35 40 VGS= 10V VGS= 7V 0 10 20 30 40 50 VDS=20V ID=23A 1 2 3 4 5 6 7 8 25°C -55°C 125°C VGS=5V VGS=5.5V VGS=6V VGS=7V VGS=8V VGS=9V VGS=10V VGS=4.5V 0.50 0.75 1.00 1.25 1.50 1.75 2.00 -75 -50 -25 0 25 50 75 100 125 150 175 VGS=10V ID=40A 1.00 2.00 3.00 4.00 5.00 7 7.5 8 8.5 9 9.5 10 ID=40A
4 Version: D2207
(TA = 25°C unless otherwise noted) Capacitance vs. Drain-Source Voltage BVDSS vs. Junction Temperature Maximum Safe Operating Area, Junction-to-Case Source-Drain Diode Forward Current vs. Voltage Normalized Thermal Transient Impedance, Junction-to-Case Normalized Effective Transient Thermal Impedance, ZӨJC t, Square Wave Pulse Duration (sec) C, Capacitance (pF) VDS, Drain to Source Voltage (V) BVDSS (Normalized) Drain-Source Breakdown Voltage TJ, Junction Temperature (°C) IS, Reverse Drain Current (A) VSD, Body Diode Forward Voltage (V) VDS, Drain to Source Voltage (V) ID, Drain Current (A) 100 1000 10000 0 10 20 30 40 VGS = 0V f = 1MHz Ciss Coss Crss 0.90 0.95 1.00 1.05 1.10 -75 -50 -25 0 25 50 75 100 125 150 175 ID=1mA 0.01 0.1 0.0001 0.001 0.01 0.1 SINGLE PULSE RӨJC=1.3°C/W Duty=0.5 Duty=0.2 Duty=0.1 Duty=0.05 Duty=0.02 Duty=0.01 Single Notes: Duty = t1 / t2 TJ = TC + PDM x ZӨJC x RӨJC 0.1 1.0 10.0 100.0 -55°C 25°C 175°C 0.1 100 1000 0.1 1 10 100 RDS(ON) SINGLE PULSE RӨJC=1.3°C/W TC=25°C
5 Version: D2207
(TA = 25°C unless otherwise noted) Power Dissipation Drain Current Normalized gate threshold voltage vs Temperature ID, Drain Current (A) Junction-to-Case Temperature (°C) Threshold Voltage (Normalized) TJ, Junction Temperature (°C) PTOT – Power (W) Junction-to-Case Temperature (°C) 0.0 20.0 40.0 60.0 80.0 100.0 120.0 0 25 50 75 100 125 150 175 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 -75 -50 -25 0 25 50 75 100 125 150 175 ID=250µA 100 120 140 160 0 25 50 75 100 125 150 175 VGS=10V Package limited Silicon limited
6 Version: D2207
PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters) PDFN56U SUGGESTED PAD LAYOUT (Unit: Millimeters) MARKING DIAGRAM Y = Year Code WW = Week Code (01~52) L = Lot Code (1~9,A~Z) F = Factory Code TSC 032NH04 YWWLF
7 Version: D2207
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