TSI20H100CW TSC | Alldatasheet

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Technical content

  • Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Low power loss/ high efficiency - High forward surge capability Packing code with suffix "G" means green compound (halogen-free) Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 1A whisker test V RRM V dV/dt V/ μs TYP MAX TYP MAX TYP MAX TYP MAX TJ = 25°C - 200 - 200 - 100 - 100 μA TJ = 125°C 82 582 531 531 5m A RθJC °C/W RθJL °C/W TJ °C TSTG °C Document Number: DS_D1411038 Version: C15 TSI20H100CW - TSI20H200CW Taiwan Semiconductor 20A, 100V - 200V Trench Schottky Rectifiers

FEATURES

  • Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition I2PAK TSI20H 100CW TYPICAL APPLICATIONS Trench Schottky barrier rectifier are designed for high frequency miniature switched mode power supplies such as adapters, lighting and on-board DC/DC converters. MECHANICAL DATA Case: I2PAK Molding compound meets UL 94 V-0 flammability rating Polarity: As marked Maximum repetitive peak reverse voltage Maximum average forward rectified current per device IF(AV) Weight: 1.6 g (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL UNIT A per diode 10 Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load per diode IFSM 150 A TJ = 25°C V TJ = 125°C Voltage rate of change (Rated VR) 10000 VF 150 200 Typical thermal resistance per diode Operating junction temperature range Storage temperature range Note 1: Pulse test with pulse width = 300μs, 1% duty cycle Instantaneous reverse current per diode at rated reverse voltage IR Instantaneous forward voltage per diode ( Note1 ) 2.8 3.8 - 55 to +150 - 55 to +150 TSI20H 120CW TSI20H 150CW TSI20H 200CW 100 120 2 3

Document Number: DS_D1411038 Version: C15 TSI20H100CW - TSI20H200CW Taiwan Semiconductor ORDER INFORMATION (EXAMPLE) RATINGS AND CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) 0 2 55 07 5 1 0 0 1 2 5 1 5 0 FIG. 1 FORWARD CURRENT DERATING CURVE WITH HEATSINK 3in x 5in x 0.25in Al-Plate CASE TEMPERATURE (oC) AVERAGE FORWARD CURRENT (A) 0.01 0.1 100 FIG. 2 TYPICAL FORWARD CHARACTERISTICS TSI20H100CW INSTANTANEOUS FORWARD CURRENT (A) FORWARD VOLTAGE (V) TJ=150oC TJ=125oC TJ=25oC TJ=100oC 0.01 0.1 100 0 0.2 0.4 0.6 0.8 1 FIG. 4 TYPICAL FORWARD CHARACTERISTICS TSI20H150CW INSTANTANEOUS FORWARD CURRENT (A) FORWARD VOLTAGE (V) TJ=150oC TJ=125oC TJ=25oC TJ=100oC 0.01 0.1 100 0 0.2 0.4 0.6 0.8 1 FIG. 3 TYPICAL FORWARD CHARACTERISTICS TSI20H120CW INSTANTANEOUS FORWARD CURRENT (A) FORWARD VOLTAGE (V) TJ=150oC TJ=125oC TJ=25oC TJ=100oC TSI20H100CW C0G Green compound code Packing code Part no.

Document Number: DS_D1411038 Version: C15 TSI20H100CW - TSI20H200CW Taiwan Semiconductor 0.00001 0.0001 0.001 0.01 0.1 100 10 20 30 40 50 60 70 80 90 100 FIG. 8 TYPICAL REVERSE CHARACTERISTICS TSI20H150CW PERCENT OF RATED PEAK REVERSE VOLTAGE (%) INSTANTANEOUS REVERSE CURRENT (mA) TJ=150oC TJ=125oC TJ=25oC TJ=100oC 100 1000 10000 0.1 1 10 100 FIG. 10 TYPICAL JUNCTION CAPACITANCE f=1.0MHz Vsig=50mVp-p JUNCTION CAPACITANCE (pF) REVERSE VOLTAGE (V) TSI20H200CW TSI20H150CW TSI20H100CW TSI20H120CW 0.00001 0.0001 0.001 0.01 0.1 100 10 20 30 40 50 60 70 80 90 100 FIG. 9 TYPICAL REVERSE CHARACTERISTICS TSI20H200CW PERCENT OF RATED PEAK REVERSE VOLTAGE (%) INSTANTANEOUS REVERSE CURRENT (mA) TJ=150oC TJ=125oC TJ=25oC TJ=100oC 0.00001 0.0001 0.001 0.01 0.1 100 10 20 30 40 50 60 70 80 90 100 FIG. 7 TYPICAL REVERSE CHARACTERISTICS INSTANTANEOUS REVERSE CURRENT (mA) TST30H120CW PERCENT OF RATED PEAK REVERSE VOLTAGE (%) TJ=150oC TJ=125oC TJ=25oC TJ=100oC INSTANTANEOUS REVERSE CURRENT (mA) TSI20H120CW PERCENT OF RATED PEAK REVERSE VOLTAGE (%) 0.00001 0.0001 0.001 0.01 0.1 100 10 20 30 40 50 60 70 80 90 100 FIG. 6 TYPICAL REVERSE CHARACTERISTICS TSI20H100CW PERCENT OF RATED PEAK REVERSE VOLTAGE (%) INSTANTANEOUS REVERSE CURRENT (mA) TJ=150oC TJ=125oC TJ=25oC TJ=100oC 0.01 0.1 100 0 0.2 0.4 0.6 0.8 1 FIG. 5 TYPICAL FORWARD CHARACTERISTICS TSI20H200CW INSTANTANEOUS FORWARD CURRENT (A) FORWARD VOLTAGE (V) TJ=150oC TJ=125oC TJ=25oC TJ=100oC

A - 10.50 - 0.413 B 1.14 1.40 0.045 0.055 C 2.80 4.20 0.110 0.165 D 0.68 0.94 0.027 0.037 E 2.41 2.67 0.095 0.105 F 9.07 9.47 0.357 0.373 G 7.79 9.35 0.307 0.368 H 4.40 4.70 0.173 0.185 I 1.14 1.40 0.045 0.055 J 2.20 2.80 0.087 0.110 K 0.35 0.64 0.014 0.025 L 0.95 1.45 0.037 0.057 P/N = Marking Code G = Green Compound YWW = Date Code F = Factory Code Document Number: DS_D1411038 Version: C15 MARKING DIAGRAM TSI20H150CW - TSI20H200CW Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS DIM. Unit (mm) Unit (inch) I2PAK

Document Number: DS_D1411038 Version: C15 TSI20H100CW - TSI20H200CW Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale.