TSI10H100CW TSC | Alldatasheet

Document overview

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Technical content

  • Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Low power loss/ high efficiency - High forward surge capability - Halogen-free according to IEC 61249-2-21 definition Molding compound meets UL 94 V-0 flammability rating Packing code with suffix "G" means green compound (halogen-free) Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 1A whisker test V RRM V dV/dt V/ μs TYP MAX TYP MAX TYP MAX TYP MAX TJ = 25°C - 100 - 100 - 100 - 100 μA TJ = 125°C - 15 - 15 1.5 10 1.5 10 mA RθJC °C/W TJ °C TSTG °C Document Number: DS_D0000003 Version: A15 3.2 TSI10H 200CW 200 100 10000 120 TSI10H 100CW TSI10H 120CW Typical thermal resistance per diode IR Maximum repetitive peak reverse voltage 150 Storage temperature range UNIT Maximum average forward rectified current A TSI10H 150CW VF Voltage rate of change (Rated VR) TSI10H100CW - TSI10H200CW Taiwan Semiconductor 10A, 100V - 200V Trench Schottky Rectifiers

FEATURES

  • Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC I2PAK TYPICAL APPLICATIONS MECHANICAL DATA Case: I2PAK Polarity: As marked Trench Schottky barrier rectifier are designed for high frequency miniature switched mode power supplies such as adapters, lighting and on-board DC/DC converters. Weight: 1.6 g (approximately) 100 per device I F(AV) per diode MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL Note 1: Pulse test with pulse width=300μs, 1% duty cycle Instantaneous reverse current per diode at rated reverse voltage IFSM A V Peak forward surge current, 8.3ms single half sine-wave superimposed on rated load per diode Operating junction temperature range - 55 to +150 - 55 to +150 Instantaneous forward voltage per diode (Note1)

Document Number: DS_D0000003 Version: A15 TSI10H100CW - TSI10H200CW Taiwan Semiconductor ORDER INFORMATION (EXAMPLE) (TA = 25°C unless otherwise noted) RATINGS AND CHARACTERISTICS CURVES 0 25 50 75 100 125 150 FIG. 1 FORWARD CURRENT DERATING CURVE WITH HEATSINK 3in x 5in x 0.25in Al-Plate CASE TEMPERATURE (oC) AVERAGE FORWARD CURRENT (A) 0.01 0.1 100 FIG. 2 TYPICAL FORWARD CHARACTERISTICS TSI10H100CW INSTANTANEOUS FORWARD CURRENT (A) FORWARD VOLTAGE (V) TJ=150oC TJ=125oC TJ=25oC TJ=100oC 0.01 0.1 100 0 0.2 0.4 0.6 0.8 1 FIG. 3 TYPICAL FORWARD CHARACTERISTICS TSI10H120CW INSTANTANEOUS FORWARD CURRENT (A) FORWARD VOLTAGE (V) TJ=150oC TJ=125oC TJ=25oC TJ=100oC 0.01 0.1 100 0 0.2 0.4 0.6 0.8 1 FIG. 4 TYPICAL FORWARD CHARACTERISTICS TSI10H150CW INSTANTANEOUS FORWARD CURRENT (A) FORWARD VOLTAGE (V) TJ=150oC TJ=125oC TJ=25oC TJ=100oC TSI10H150CW C0G Green compound code Packing code Part no.

Document Number: DS_D0000003 Version: A15 TSI10H100CW - TSI10H200CW Taiwan Semiconductor 0.00001 0.0001 0.001 0.01 0.1 100 10 20 30 40 50 60 70 80 90 100 FIG. 7 TYPICAL REVERSE CHARACTERISTICS TSI10H120CW PERCENT OF RATED PEAK REVERSE VOLTAGE (%) INSTANTANEOUS REVERSE CURRENT (mA) TJ=150oC TJ=125oC TJ=25oC TJ=100oC 0.00001 0.0001 0.001 0.01 0.1 100 10 20 30 40 50 60 70 80 90 100 FIG. 8 TYPICAL REVERSE CHARACTERISTICS TSI10H150CW PERCENT OF RATED PEAK REVERSE VOLTAGE (%) INSTANTANEOUS REVERSE CURRENT (mA) TJ=150oC TJ=125oC TJ=25oC TJ=100oC 0.00001 0.0001 0.001 0.01 0.1 100 10 20 30 40 50 60 70 80 90 100 FIG. 6 TYPICAL REVERSE CHARACTERISTICS TSI10H100CW PERCENT OF RATED PEAK REVERSE VOLTAGE (%) INSTANTANEOUS REVERSE CURRENT (mA) TJ=150oC TJ=125oC TJ=25oC TJ=100oC 100 1000 10000 0.1 1 10 100 FIG. 10 TYPICAL JUNCTION CAPACITANCE f=1.0MHz Vsig=50mVp-p JUNCTION CAPACITANCE (pF) REVERSE VOLTAGE (V) TSI10H120C TSI10H150C TSI10H100C TSI10H200C 0.00001 0.0001 0.001 0.01 0.1 100 10 20 30 40 50 60 70 80 90 100 FIG. 9 TYPICAL REVERSE CHARACTERISTICS TSI10H200C PERCENT OF RATED PEAK REVERSE VOLTAGE (%) INSTANTANEOUS REVERSE CURRENT (mA) TJ=150oC TJ=125oC TJ=25oC TJ=100oC 0.01 0.1 100 0 0.2 0.4 0.6 0.8 1 FIG. 5 TYPICAL FORWARD CHARACTERISTICS TSI10H200CW INSTANTANEOUS FORWARD CURRENT (A) FORWARD VOLTAGE (V) TJ=150oC TJ=125oC TJ=25oC TJ=100oC

A - 10.50 - 0.413 B 1.14 1.40 0.045 0.055 C 2.80 4.20 0.110 0.165 D 0.68 0.94 0.027 0.037 E 2.41 2.67 0.095 0.105 F 9.07 9.47 0.357 0.373 G 7.79 9.35 0.307 0.368 H 4.40 4.70 0.173 0.185 I 1.14 1.40 0.045 0.055 J 2.20 2.80 0.087 0.110 K 0.35 0.64 0.014 0.025 L 0.95 1.45 0.037 0.057 P/N = Marking Code G = Green Compound YWW = Date Code F = Factory Code Document Number: DS_D0000003 Version: A15 MARKING DIAGRAM TSI10H100CW - TSI10H200CW Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS I2PAK DIM. Unit (mm) Unit (inch)

Document Number: DS_D0000003 Version: A15 The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. TSI10H100CW - TSI10H200CW Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.