TSH330 STMICROELECTRONICS | Alldatasheet
Document overview
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Technical content
■ Bandwidth: 1.1GHz (Gain=+2) ■ Quiescent current: 16.6 mA ■ Slew rate: 1800V/ µs ■ Input noise: 1.3nV/ √Hz ■ Distortion: SFDR = -78dBc (10MHz, 2Vp-p) ■ Output stage optimized for driving 100 Ω loads ■ Tested on 5V power supply
Description
The TSH330 is a current feedback operational amplifier using a very high-speed complementary technology to provide a large bandwidth of 1.1GHz in gain of 2 while drawing only 16.6mA of quiescent current. In addition, the TSH330 offers 0.1dB gain flatness up to 160MHz with a gain of 2. With a slew rate of 1800V/µs and an output stage optimized for driving a standard 100 Ω load, this device is highly suitable for applications where speed and low-distortion are the main requirements. The TSH330 is a single operator available in the SO8 plastic package, saving board space as well as providing excellent thermal and dynamic performances. Pin Connections (top view)
Applications
■ Communication & video test equipment ■ Medical instrumentation ■ ADC drivers Order Codes +VCC NC Output+ -VCC NC -IN +IN SO8 NC D SO-8 (Plastic Micropackage) Part Number Temperature Range Package Conditioning Marking TSH330ID -40°C to +85°C SO8 Tube TSH330I TSH330IDT SO8 Tape&Reel TSH330I
1.1 GHz Low-Noise Operational Amplifier
1 Absolute Maximum Ratings
Table 1. Key parameters and their absolute maximum ratings 1) All voltages values are measured with respect to the ground pin. 2) Differential voltage are non-inverting input terminal with respect to the inverting input terminal. 3) The magnitude of input and output voltage must never exceed V CC +0.3V. 4) Short-circuits can cause excessive heating. Destructive dissipation can result from short circuit on amplifiers. 5) Human body model, 100pF discharged through a 1.5k Ω resistor into pMin of device. no external series resistor (internal resistor < 5 Ω), into pin to pin of device. Table 2. Operating conditions 1) Tested in full production at 5V (±2.5V) supply voltage.
2 Electrical Characteristics
Table 3. Electrical characteristics for V CC= ±2.5Volts, Tamb=+25°C (unless otherwise specified) AV = -4, Tmin. < Tamb < Tmax.
600 MHz
Table 4. Closed-loop gain and feedback components
3 Evaluation Boards
z SO8_SINGLE_HF: Board for the evaluation of a single high-speed op-amp in SO8 package. z SO8_DUAL_HF: Board for the evaluation of a dual high-speed op-amp in SO8 package. and non-inverting configuration, dual and single supply. Figure 30. Evaluation kit for high-speed op-amps
4 Power Supply Considerations
Correct power supply bypassing is very important for optimizing performance in high-frequency ranges. capacitors must be incorporated for both the negative and the positive supply. For example, on the SO8_SINGLE_HF board, these capacitors are C6, C7, C8, C9. will provide an output dynamic from +0.9V to +4.1V on 100 Ω load. virtual ground using an operational amplifier or a two-resistance divider (which is the cheapest solution). Evaluation Boards on page 10). Figure 31. Circuit for power supply bypassing
a consideration of the cut off frequency of this low-pass filter. Figure 32. Circuit for +5V single supply
5 Noise Measurements
where ∆F is the specified bandwidth. where k is the Boltzmann's constant, equal to 1,374.10-23J/°K. T is the temperature (°K). Figure 33. Noise model
The input noise of the instrumentation must be extracted from the measured noise value. The real output noise value of the driver is: Equation 3 The input noise is called the Equivalent Input Noise as it is not directly measured but is evaluated from the measurement of the output divided by the closed loop gain (eNo/g). After simplification of the fourth and the fifth term of Equation 2 we obtain: Equation 4 Measurement of the Input Voltage Noise eN If we assume a short-circuit on the non-inverting input (R3=0), from Equation 4 we can derive: Equation 5 In order to easily extract the value of eN, the resistance R2 will be chosen to be as low as possible. In the other hand, the gain must be large enough: R3=0, gain: g=100 Measurement of the Negative Input Current Noise iNn To measure the negative input current noise iNn, we set R3=0 and use Equation 5 . This time the gain must be lower in order to decrease the thermal noise contribution: R3=0, gain: g=10 Measurement of the Positive Input Current Noise iNp To extract iNp from Equation 3, a resistance R3 is connected to the non-inverting input. The value of R3 must be chosen in order to keep its thermal noise contribution as low as possible against the iNp contribution: R3=100W, gain: g=10 eNo Measured() 2 instrumentation() 2–= eNo 2 eN2 g2 iNn 2 R22 iNp 2+×+× R32× g2× g4 k T R 21 R2 4kTR3×+×+= eNo eN 2 g2 iNn 2 R22 g4 k T R 2×+×+×=
6 Intermodulation Distortion Product
is the amplitude of the harmonics of the output signal V out. contributes to harmonic distortion and to the intermodulation product. the driving capability of multi-tone input signals. ω1+2ω2) and (ω1+2ω2) with an amplitude of (3/4)C3A 3. Figure 34. Inverting summing amplifier (using evaluation board SO8_S_MULTI)
7 The Bias of an Inverting Amplifier
A resistance is necessary to achieve a good input biasing, such as resistance R shown in Figure 35. The magnitude of this resistance is calculated by assuming the negative and positive input bias current. Figure 35. Compensation of the input bias current
8 Active Filtering
Figure 36. Low-pass active filtering, Sallen-Key
9 Package Mechanical Data
DIM. mm. inch A 1.35 1.75 0.053 0.069 A1 0.10 0.25 0.04 0.010 A2 1.10 1.65 0.043 0.065 B 0.33 0.51 0.013 0.020 C 0.19 0.25 0.007 0.010 D 4.80 5.00 0.189 0.197 E 3.80 4.00 0.150 0.157 e 1.27 0.050 H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.40 1.27 0.016 0.050 k ˚ (max.) ddd 0.1 0.04 SO-8 MECHANICAL DATA 0016023/C
Date Revision Description of Changes Oct. 2004 1 First release corresponding to Preliminary Data version of datasheet. Dec. 2004 2 Release of mature product datasheet. June 2005 3 Table 1 on page 2 - Rthjc: Thermal Resistance Junction to Ambient replaced by Thermal Resistance Junction to Case Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the co nsequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publicati on are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics prod ucts are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectro nics. The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners © 2004 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Ital y - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America