TSH251 TSC | Alldatasheet

Document overview

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  • PDF pages: 8

Technical content

Features

  • CMOS Hall IC Technology
  • Strong RF noise protection
  • 1.65 to 3.5V for battery-powered applications
  • Omni polar, output switches with absolute value of North or South pole from magnet
  • Operation down to 1.65V, Micropower consumption
  • High Sensitivity for reed switch replacement

applications

  • Low sensitivity drift in crossing of Temp. range
  • Ultra Low power consumption at 5uA (Avg)
  • High ESD Protection, HBM > ±4KV( min )
  • Totem-pole output

Ordering Information

Part No. Package Packing TSH251CT B0G TO-92S 1Kpcs / Bulk Bag TSH251CX RFG TSOT-23 3Kpcs / 7” Reel Note: “G” denote for Halogen Free Product Application

  • Solid state switch
  • Handheld Wireless Handset Awake Switch (Flip Cell/PHS Phone/Note Book/Flip Video Set)
  • Lid close sensor for battery powered devices
  • Magnet proximity sensor for reed switch replacement in low duty cycle applications
  • Water Meter, Floating Meter Absolute Maximum Rating (Ta = 25 oC unless otherwise noted) Characteristics Limit Value Unit Supply voltage VDD 4.5 V Output Voltage VOUT 4.5 V Reverse Voltage VDD /OUT -0.3 V Magnetic flux density Unlimited Gauss Output current IOUT 1 mA Operating temperature range TOPR -40 to +85 oC Storage temperature range TSTG -65 to +150 oC Maximum Junction Temp TJ 150 oC Thermal Resistance - Junction to Ambient TO-92S θJA 206 oC/W TSOT-23 543 Thermal Resistance - Junction to Case TO-92S θJC 148 oC/W TSOT-23 410 Package Power Dissipation TO-92S PD 606 mW TSOT-23 230 Note: Exceeding the absolute maximum ratings may cause permanent damage. Exposure to absolute maximum- rated conditions for extended periods may affect device reliability. Pin Definition : 1. V CC 2. GND 3. Output Pin Definition : 1. V CC 2. Output 3. GND

Micropower CMOS Output Hall Effect Switch 2/8 Version: A13 C1 ：10nF C2 ：100pF Block Diagram Note: Static sensitive device; please observe ESD precautions. Reverse VDD protection is not included. For reverse voltage protection, a 100 Ω resistor in series with VDD is recommended. Typical Application Circuit Electrical Specifications (DC Operating Parameters ：TA=+25 oC,VDD =1.8V) Parameters Test Conditions Min Typ Max Units Supply Voltage Operating 1.65 -- 3.5 V Supply Current Awake State -- 1.4 3 mA Sleep State -- 3.6 7 µA Average -- 5 10 µA Output Leakage Current Output off -- -- 1 uA Output High Voltage IOUT=0.5mA(Source) VDD-0.2 -- -- V Output Low Voltage IOUT=0.5mA(Sink) -- -- 0.2 V Awake mode time Operating -- 40 80 uS Sleep mode time Operating -- 40 80 mS Duty Cycle -- 0.1 -- % Electro-Static Discharge HBM 4 KV

Micropower CMOS Output Hall Effect Switch 3/8 Version: A13 Magnetic Specifications (TSH251CT) Parameter Symbol Test Conditions Min. Typ. Max. Units Operating Point BOPS S pole to branded side, B > BOP , Vout On 30 55 Gauss BOPN N pole to branded side, B > BOP , Vout On -55 -30 Gauss Release Point BRPS S pole to branded side, B < B RP , Vout Off 10 20 Gauss BRPN N pole to branded side, B < B RP , Vout Off -20 -10 Gauss Hysteresis BHYS |B OP x - BRP x| 10 Gauss Note: 1G (Gauss) = 0.1mT (millitesta) Magnetic Specifications (TSH251CX) Parameter Symbol Test Conditions Min. Typ. Max. Units Operating Point BOPS N pole to branded side, B > B OP , Vout On 30 55 Gauss BOPN S pole to branded side, B > B OP , Vout On -55 -30 Gauss Release Point BRPS N pole to branded side, B < B RP , Vout Off 10 20 Gauss BRPN S pole to branded side, B < B RP , Vout Off -20 -10 Gauss Hysteresis BHYS |B OP x - BRP x| 10 Gauss Note: 1G (Gauss) = 0.1mT (millitesta) Output Behavior versus Magnetic Pole DC Operating Parameters: TA = -40 to 125 oC, V CC = 1.8V ~ 6V Parameter Test condition OUT South pole B<Bop[(-55)~(-10)] Low Null or weak magnetic field B=0 or B < BRP High North pole B>Bop(55~10) Low TO-92S SOT-23

Micropower CMOS Output Hall Effect Switch 6/8 Version: A13 TO-92S Mechanical Drawing Unit: Millimeters Marking Diagram 251 = Device Code Y = Year Code (3=2013, 4=2014….) WW = Week Code (01~52)

Micropower CMOS Output Hall Effect Switch 7/8 Version: A13 TSOT-23 Mechanical Drawing Unit: Millimeters Marking Diagram 251 = Device Code WW = Week Code Table week 1 2 3 4 5 6 7 8 9 10 11 12 13 code OA OB OC OD OE OF OG OH OI OJ OK OL OM week 14 15 16 17 18 19 20 21 22 23 24 25 26 code ON OO OP OQ OR OS OT OU OV OW OX OY OZ week 27 28 29 30 31 32 33 34 35 36 37 38 39 code PA PB PC PD PE PF PG PH PI PJ PK PL PM week 40 41 42 43 44 45 46 47 48 49 50 51 52 code PN PO PP PQ PR PS PT PU PV PW PX PY PZ

Micropower CMOS Output Hall Effect Switch 8/8 Version: A13 Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale.