TSH151 STMICROELECTRONICS | Alldatasheet
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WIDE BANDWIDTH AND MOS INPUTS SINGLE OPERATIONAL AMPLIFIER June 1998 ORDER CODES Part Number Temperature Range Package ND TSH151C 0 oC, 70oC •• TSH151I -40 oC, 125oC •• 151-01.TBL 7Inverting Input Non-inverting Input Output Offset Null 2Offset Null 1 N.C. VCC V CC 151-01.EPS PIN CONNECTIONS (top view) .LOW DISTORTION .GAIN BANDWIDTH PRODUCT : 150MHz .UNITY GAIN STABLE .SLEW RATE : 200V/µs .VERY FAST SETTLING TIME : 70ns (0.1%) .VERY HIGH INPUT IMPEDANCE D SO8 (Plastic Micropackage) N DIP8 (Plastic Package) DESCRIPTION: The TSH151 is a wideband monolithic operational amplifier, internally compensatedfor unity-gainsta- bility. The TSH151 features extremely high input imped- ance (typically greater than 1012Ω ) allowing direct interfacing with high impedance sources. Low distortion, wide bandwidth and high linearity make this amplifier suitable for RF and video appli- cations. Short circuit protection is provided by an internal current-limiting circuit. The TSH151 has internal electrostatic discharge (ESD) protection circuits and fulfills MILSTD883C- Class2.
151-02.EPS SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCC Supply Voltage ±7V Vid Differential Input Voltage ±5V Vi Input Voltage Range ±5V Iin Current On Offset Null Pins ±20 mA Toper Operating Free-Air Temperature Range TSH151C TSH151I 0oC, 70oC -40oC, 15oC oC 151-02.TBL N1 N2 TSH151 100kΩ V CC 151-03.EPS INPUT OFFSET VOLTAGE NULL CIRCUIT OPERATING CONDITIONS Symbol Parameter Value Unit VCC Supply Voltage ±3t o±6V Vic Common Mode Input Voltage Range V CC - to VCC + -3 V 151-03.TBL TSH151
ELECTRICAL CHARACTERISTICS
VCC = ± 5V, Tamb =2 5oC (unless otherwise specified) Symbol Parameter TSH151C, I UnitMin. Typ. Max. Vio Input Offset Voltage Tmin ≤ Tamb ≤ Tmax. 0.5 10 mV DV io Input Offset Voltage Drift Tmin ≤ Tamb ≤ Tmax. 10 µV/oC Iib Input Bias Current 2 300 pA Iio Input Offset Current 2 200 pA ICC Supply Current, no load VCC = ± 5V VCC = ± 3V VCC = ±6V Tmin ≤ Tamb ≤ Tmax. VCC = ± 5V mA Avd Large Signal Voltage Gain Vo = ±2.5V R L = ∞ R L= 100Ω R L =5 0Ω 800 300 200 1300 850 650 V/V Vicm Input Common Mode Voltage Range -5 to +2 -5.5 to +2.5 V CMR Common Mode Rejection Ratio V ic=V icm min. 60 100 dB SVR Supply Voltage Rejection Ratio VCC = ± 5V to± 3V 50 70 dB Vo Output Voltage R L = 100Ω R L =5 0Ω Tmin ≤ Tamb ≤ Tmax. R L = 100Ω R L =5 0Ω ± 3 ± 2.8 ± 2.9 ± 2.7 +3.5 -3.7 +3.3 -3.5 V Io Output Short Circuit Current Vid= ±1V, Vo =0 V ±50 ±100 mA GBP Gain Bandwidth Product AVCL = 100, RL = 100Ω ,C L = 15pF, f = 7.5MHz 150 MHz SR Slew Rate Vin= ± 2V, AVCL =1 ,RL = 100Ω ,C L = 15pF 100 200 V/µs en Equivalent Input Voltage Noise R S =5 0Ω fo = 1kHz fo = 10kHz fo = 100kHz fo = 1MHz 18.2 18.1 18.2 nV √Hz K ov Overshoot Vin= ± 2V, AVCL =1 ,RL = 100Ω ,C L = 15pF 10 ts Settling Time 0.1% - (note 1) Vin= ± 1V, AVCL =- 1 7 0 ns tr,tf Rise and Fall Time - (note 1) Vin= ±100mV, AVCL =2 5 ns td Delay Time - (note 1) Vin= ±100mV, AVCL =2 4 ns ∅ m Phase Margin AVM =1 ,RL = 100Ω, CL = 15pF 45 Degrees THD Total Harmonic Distortion AVCL = 10, f = 1KHz, Vo = ± 2.5V, no load 0.02 FPB Full Power Bandwidth - (note 2) Vo = 5Vpp, RL = 100Ω Vo = 2Vpp, RL = 100Ω MHz Note 1 : See test waveform figure Note 2 : Full power bandwidth =SR Π Vopp 151-04.TBL TSH151
50% td tr 90% ts 0.1% of edge amplitude 10% 151-04.EPS TEST WAVEFORM Input 50Ω 1kΩ 1kΩ 10nF 10µF C F -5V +5V 10nF 10µF 50Ω Output 151-05.EPS EVALUATION CIRCUIT As for any high frequency device, a few rules must be observed when designing the PCB to get the best performances from your this speed op amp. From the most to the least important points :
- Each power supply lead has to be bypassed to ground with a 10nF ceramic capacitor very close to the device and a 10µF tantalum ca- pacitor.
- To provide low inductance and low resistance common return, use a ground plane or com- mon point return for power and signal.
- All leads must be wide and as short as possi- ble especially for op amp inputs. This is in order to decrease parasitic capacitance and inductance.
- Use small resistor values to decrease time constant with parasitic capacitance.
- Choose component sizes as small aspossible (SMD).
- On output, decrease capacitor load so as to avoid circuit stability being degraded which may cause oscillation. One can also add a serial resistor in order to minimise its influ- ence.
- One can add in parallel with feedbackresistor a few pF ceramic capacitor C F adjusted to optimize the settling time. PRINTED CIRCUIT LAYOUT TSH151
.LOW DISTORTION .GAIN BANDWIDTH PRODUCT : 150MHz .UNITY GAIN STABLE .SLEW RATE : 200V/µs .VERY FAST SETTLING TIME : 70ns (0.1%) .VERY HIGH INPUT IMPEDANCE MACROMODEL Standard Linear Ics Macromodels, 1993. CONNECTIONS : * 1 INVERTING INPUT * 2 NON-INVERTING INPUT * 3 OUTPUT * 4 POSITIVEPOWER SUPPLY * 5 NEGATIVE POWER SUPPLY .SUBCKT TSH151 1 3 2 4 5 (analog) .MODEL MDTH D IS=1E-8 KF=3.322525E-14 CJO=10F * INPUT STAGE RESD1 2 202 150 RESD2 1 201 150 CIP 202 5 10.000000E-12 CIN 201 5 10.000000E-12 EIP 10 5 202 5 1 EIN 16 5 201 5 1 RIP 10 11 2.600000E-01 RIN 15 16 2.600000E-01 RIS 11 15 1.683423E-01 DIP 11 12 MDTH 400E-12 DIN 15 14 MDTH 400E-12 VOFP 12 13 DC 0.000000E+00 VOFN 13 14 DC 0 IPOL 13 5 1.000000E-03 CPS 11 15 8E-09 DINN 17 13 MDTH 400E-12 VIN 17 5 1.500000e+00 DINR 15 18 MDTH 400E-12 VIP 4 18 5.000000E-01 FCP 4 5 VOFP 2.200000E+01 FCN 5 4 VOFN 2.200000E+01 * AMPLIFYING STAGE FIP 5 19 VOFP 3.800000E+02 FIN 5 19 VOFN 3.800000E+02 RG1 19 5 1.455096E+03 RG2 19 4 1.455096E+03 CC 19 29 2.000000E-09 HZTP 29 30 VOFP 100 HZTN 30 5 VOFN 100 DOPM 19 22 MDTH 400E-12 DONM 21 19 MDTH 400E-12 HOPM 22 28 VOUT 5.000000E+02 VIPM 28 4 5.000000E+01 HONM 21 27 VOUT 5.000000E+02 VINM 5 27 5.000000E+01 EOUT 26 23 19 5 1 VOUT 23 5 0 ROUT 26 3 9.978126E+00 COUT 3 5 1.000000E-13 DOP 19 25 MDTH 400E-12 VOP 4 25 1.946965E+00 DON 24 19 MDTH 400E-12 VON 24 5 1.946965E+00 .ENDS Applies to : TSH151C,I VCC = ±5V,Tamb =2 5oC (unless otherwise specified) Symbol Conditions Value Unit Vio 0m V Avd R L = 100Ω 1.18 V/mV ICC No load, per operator 23 mA Vicm -5 to 2.5 V VOH R L = 100Ω +3.6 V VOL R L = 100Ω -3.6 V Isink VO = 0V 108 mA Isource VO = 0V 108 mA GBP R L = 100Ω, C L = 15pF 130 MHz SR R L = 100Ω, C L = 15pF 172 V/ µs ∅ mR L = 100Ω, C L = 15pF 25 Degrees ts AV = -1 at 0.1% 40 ns TSH151
PM-DIP8.EPS PACKAGE MECHANICAL DATA
8 PINS - PLASTIC DIP
Dimensions Millimeters Inches A 3.32 0.131 a1 0.51 0.020 B 1.15 1.65 0.045 0.065 b 0.356 0.55 0.014 0.022 b1 0.204 0.304 0.008 0.012 D 10.92 0.430 E 7.95 9.75 0.313 0.384 e 2.54 0.100 e3 7.62 0.300 e4 7.62 0.300 F 6.6 0260 i 5.08 0.200 L 3.18 3.81 0.125 0.150 Z 1.52 0.060 DIP8.TBL TSH151
PM-SO8.EPS PACKAGE MECHANICAL DATA
8 PINS - PLASTIC MICROPACKAGE (SO)
Dimensions Millimeters Inches A 1.75 0.069 a1 0.1 0.25 0.004 0.010 a2 1.65 0.065 a3 0.65 0.85 0.026 0.033 b 0.35 0.48 0.014 0.019 b1 0.19 0.25 0.007 0.010 C 0.25 0.5 0.010 0.020 c1 45 o (typ.) D 4.8 5.0 0.189 0.197 E 5.8 6.2 0.228 0.244 e 1.27 0.050 e3 3.81 0.150 F 3.8 4.0 0.150 0.157 L 0.4 1.27 0.016 0.050 M 0.6 0.024 S8 o (max.) SO8.TBL Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for useas criticalcomponents in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics 1998 STMicroelectronics – Printed in Italy – All Rights Reserve d STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. ORDER CODE : TSH151