TSG60N100 TSC | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 9
Technical content
Features
- 1000V NPT Trench Technology
- High Speed Switching
- Low Conduction Loss Block Diagram NPT Trench IGBT
Ordering Information
Part No. Package Packing TSG60N100CE C0 TO-264 25pcs / Tube Absolute Maximum Rating (TA=25 oC unless otherwise noted) Parameter Symbol Limit Unit Collector-Emitter Voltage VCES 1000 V Gate-Emitter Voltage VGES ±20 V Continuous Current TC =25 oC IC 60 A TC =100 oC 42 A Pulsed Collector Current * ICM 200 A Diode Continuous Forward Current (T C =100 )℃ I F 15 A Max Power Dissipation TJ=25 oC PD 208 W TJ=100 oC 83 Operating Junction Temperature TJ -55 to +150 ºC Storage Temperature Range TSTG -55 to +150 oC * Repetitive rating: Pulse width limited by max. junction temperature Pin Definition : 1. Gate 2. Collector 3. Emitter
N-Channel IGBT with FRD. 2/9 Version: B12 Thermal Performance Parameter Symbol Limit Unit Thermal Resistance - Junction to Case IGBT R ӨJC 0.6 oC/W DIODE 2.2 Thermal Resistance - Junction to Ambient R ӨJA 25 Electrical Specifications (Tc=25 oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Collector-Emitter Breakdown Voltage VGE = 0V, I C = 1mA BV CES 1000 -- -- V Zero Gate Voltage Collector Current VCE = 1000V, V GE = 0V I CES -- -- 1 mA Gate-Emitter Leakage Current V GE = 20V, V CE = 0V I GES -- -- ±250 nA Gate-Emitter Threshold Voltage V GE = VCE , I C = 60mA V GE(TH) 3.5 5.5 7.5 V Collector-Emitter Saturation Voltage VGE = 15V,IC =60A, TJ=25ºC V CE(SAT) -- 2.1 2.5 V VGE = 15V,IC =60A, TJ=125ºC V CE(SAT) -- 2.6 -- V Dynamic Input Capacitance VCE = 30V, V GE = 0V, f = 1.0MHz C IES -- 5600 -- pF Output Capacitance C OES -- 150 -- Reverse Transfer Capacitance C RES -- 115 -- Switching Turn-On Delay Time VCC = 600V, I C = 60A, R G = 10 Ω, V GE = 15V Inductive Load, TJ=25 oC td(on) -- 230 -- nS Rise Time tr -- 210 -- Turn-Off Delay Time td(off) -- 1250 -- Fall Time tf -- 120 230 Turn-On Switching Loss Eon -- 14.5 22 mJ Turn-Off Switching Loss Eoff -- 7.0 11 Total Switching Loss Ets -- 21.5 33 Turn-On Delay Time VCC = 600V, I C = 60A, R G = 10 Ω, V GE = 15V Inductive Load, TJ=125 oC td(on) -- 210 -- nS Rise Time tr -- 260 -- Turn-Off Delay Time td(off) -- 1350 -- Fall Time tf -- 160 -- Turn-On Switching Loss Eon -- 16 24 mJ Turn-Off Switching Loss Eoff -- 8.0 12 Total Switching Loss Ets -- 24 36 Total Gate Charge VCC = 600V, I C = 60A, VGE = 15V Q g -- 270 405 nC Gate-Emitter Charge Q ge -- 45 68 Gate-Collector Charge Q gc -- 100 150
N-Channel IGBT with FRD. 3/9 Version: B12 Electrical Specifications of the DIODE (Tc=25 oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Diode Forward Voltage I F = 60A, TJ=25 oC VFM -- 2.9 3.4 V Reverse Recovery Time IF = 60A, dl/dt=200A/us TJ=25 oC tfr -- 310 465 ns Reverse Recovery Current TJ=25 oC Ifr -- 34 51 A TJ=125 oC -- 35 -- Reverse Recovery Charge TJ=25 oC Q fr -- 5270 7900 nC TJ=125 oC -- 5600 --
N-Channel IGBT with FRD. 4/9 Version: B12 Electrical Characteristics Curve (Tc = 25 oC, unless otherwise noted) Output Characteristics Saturation voltage characteristics Saturation voltage vs. collector current Saturation voltage vs. gate bias Saturation voltage vs. gate bias Capacitance characteristics
N-Channel IGBT with FRD. 5/9 Version: B12 Electrical Characteristics Curve (Ta = 25 oC, unless otherwise noted) Turn on time vs. gate resistance Turn off time vs. gate resistance Switching loss vs. gate resistance Turn on time vs. collector current Turn off time vs. collector current Switching loss vs. collector current
N-Channel IGBT with FRD. 6/9 Version: B12 Electrical Characteristics Curve (Tc = 25 oC, unless otherwise noted) Gate charge characteristics SOA Characteristics RBSOA Conduction characteristics Reverse recovery current vs. forward current Stored recovery charge vs. forward current
N-Channel IGBT with FRD. 7/9 Version: B12 Electrical Characteristics Curve (Ta = 25 oC, unless otherwise noted) Reverse recovery time vs. forward current Normalized Thermal Transient Impedance, Junction-to-Ambient
N-Channel IGBT with FRD. 8/9 Version: B12 TO-264 Mechanical Drawing TO-264 DIMENSION DIM MILLIMETERS INCHES
N-Channel IGBT with FRD. 9/9 Version: B12 Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale.