TSF8N65C

TSF8N65C THINKISEMI | Alldatasheet

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Technical content

Features

R DS(on) (Max 1.0 Ω )@V GS =10V Gate Charge (Typical 48nC) Improved dv/dt Capability 100% Avalanche Tested 2. Drain 3. Source 1. Gate R DS(ON) = 1.0 ohm I D = 7.5A BV DSS = 650V General Description This N-channel enhancement mode field-effect power transistor using THINKI Semiconductor advanced planar stripe, DMOS technol- ogy intended for off-line switch mode power supply. Also, especially designed to minimize rds(on) and high rugged avalanche characteristics. The TO-220F pkg is well suited for adaptor power unit and small power inverter application. Absolute Maximum Ratings Symbol Parameter Value Units Min. Typ. Max. R θJC Thermal Resistance, Junction-to-Case - 0.88 °C/W R θCS Thermal Resistance, Case to Sink - 0.5 - °C/W R θJA Thermal Resistance, Junction-to-Ambient - - 62.5 °C/W GD S TO-220F TSF8N65C Pb Free Plating Product TSF8N65C Pb 7.5A,650V Insulated N-Channel Type Power MOSFETs © 2006 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com/ Page 1/6Rev.05

Electrical Characteristics

( T C = 25 °C unless otherwise noted ) Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BV DSS Drain-Source Breakdown Voltage V GS = 0V, I D = 250uA 650 - - V Δ BV DSS Δ T J Breakdown Voltage Temperature coefficient I D = 250uA, referenced to 25 °C -0 . 6 8 -V / ° C I DSS Drain-Source Leakage Current V DS = 600V, V GS = 0V -- 1 0 u A V DS = 480V, T C = 125 °C -- 1 0 0 u A I GSS Gate-Source Leakage, Forward V GS = 30V, V DS = 0V -- 1 0 0 n A Gate-source Leakage, Reverse V GS = -30V, V DS = 0V - - -100 nA On Characteristics V GS(th) Gate Threshold Voltage V DS = V GS , I D = 250uA 2.0 - 4.0 V R DS(ON) Static Drain-Source On-state Resis- tance V GS =10 V, I D = 4.5A -0 . 8 9 1 Ω Dynamic Characteristics C iss Input Capacitance V GS =0 V, V DS =25V, f = 1MHz - 820 980 pFC oss Output Capacitance - 140 170 C rss Reverse Transfer Capacitance - 43 50 Dynamic Characteristics t d(on) Turn-on Delay Time V DD =300V, I D =7.5A, R G =25Ω ※ see fig. 13. (Note 4, 5) - 32 70 ns t r Rise Time - 85 160 t d(off) Turn-off Delay Time - 70 145 t f Fall Time - 65 120 Q g Total Gate Charge V DS =480V, V GS =10V, I D =7.5A ※ see fig. 12. (Note 4, 5) - 48 55 nCQ gs Gate-Source Charge - 6.8 - Q gd Gate-Drain Charge(Miller Charge) - 25 - Source-Drain Diode Ratings and Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Unit. I S Continuous Source Current Integral Reverse p-n Junction Diode in the MOSFET -- 7 . 5 AI SM Pulsed Source Current - - 30 V SD Diode Forward Voltage I S =7.5.0A, V GS =0V - - 1.4 V t rr Reverse Recovery Time I S =7.5A, V GS =0V, dI F /dt=100A/us -4 0 0 - n s Q rr Reverse Recovery Charge - 2.9 - uC NOTES 1. Repeativity rating : pulse width limited by junction temperature 2. L = 22.3mH, I AS =7.50A, V DD = 50V, R G = 50Ω , Starting T J = 25°C 3. I SD ≤ 7.5A , di/dt ≤ 200A/us, V DD ≤ BV DSS , Starting T J = 25°C 4. Pulse Test : Pulse Width ≤ 300us, Duty Cycle ≤ 2% 5. Essentially independent of operating temperature. TSF8N65C © 2006 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com/ Page 2/6Rev.05

0.0 0.5 1.0 1.5 2.0 2.5 V GS = 20V V GS = 10V Note : T J = 25 R DS(ON) Drain-Source On-Resistance [Ω ] I D , Drain Current [A] Notes : 1. 250µ s Pulse Test 2. T C = 25 V GS Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V I D , Drain Current [A] V DS , Drain-Source Voltage [V] 0 1 02 03 04 05 0 V DS = 120V V GS , Gate-Source Voltage [V] V DS = 300V V DS = 480V Note : I D = 7.4 A Q G , Total Gate Charge [nC] 0 5 10 15 20 25 30 35 40 250 500 750 1000 C iss gs gd ds =shorted) C oss ds gd C rss gd Notes : 1. V GS = 0V 2. f=1MHz C iss C oss C rss Capacitance [pF] V DS , Drain-Source Voltage [V] 150 Notes : 1. V GS = 0V 2. 250µ s Pulse Test I DR , Reverse Drain Current [A] V SD , Source-Drain voltage [V] 23456789 1 0 150 o C o C -55 o C Notes : 1. V DS = 50V 2. 250µ s Pulse Test I D , Drain Current [A] V GS , Gate-Source Voltage [V] Fig 4. On State Current vs. Allowable Case Temperature Fig 5. Capacitance Characteristics Fig 6. Gate Charge Characteristics Fig 1. On-State Characteristics Fig 2. Transfer Characteristics Fig 3. On Resistance Variation vs. Drain Current and Gate Voltage TSF8N65C © 2006 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com/ Page 3/6Rev.05

T Case Temperature [ o I Drain Current [A] Notes : 1. Z θ JC (t) = 0.88 /W Max. 2. Duty Factor, D=t 3. T JM - T C = P DM * Z θ JC (t) single pulse D=0.5 0.02 0.2 0.05 0.1 0.01 Z θ JC (t), Thermal Response t , Square W ave Pulse Duration [sec] DC 10 ms 1 ms 100 µ s Operation in This Area is Limited by R DS(on) Notes : 1. T C = 25 o C 2. T J = 150 o C 3. Single Pulse I D , Drain Current [A] V DS , Drain-Source Voltage [V] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 Notes : 1. V GS = 10 V 2. I D = 3.7 A R DS(on) , (Normalized) Drain-Source On-Resistance T J , Junction Temperature [ o -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 Notes : 1. V GS = 0 V 2. I D = 250 µ A BV DSS , (Normalized) Drain-Source Breakdown Voltage T J , Junction Temperature [ o Fig 9. Maximum Safe Operating Area Fig 10. Maximum Drain Current vs. Case Temperature Fig 7. Breakdown Voltage Variation vs. Junction Temperature Fig 8. On-Resistance Variation vs. Junction Temperature Fig 11. Transient Thermal Response Curve TSF8N65C © 2006 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com/ Page 4/6Rev.05

Fig 13. Switching Time Test Circuit & Waveforms Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms Fig. 12. Gate Charge Test Circuit & Waveforms 12V 200nF 50KO 300nF V GS 1mA Same Type as DUT DUT V DS V GS Charge Q g Q gs Q gd Pulse Generator 10V R G V DS R L V DD (0.5 rated V DS DUT V DS V in 90% 10% t d(on) t r t d(off) t f t on t off Time 10V V DS R G V DS (t) DUT BV DSS L I D V DD I D (t) I AS E AS L I AS BV DSS BV DSS - V DD t p TSF8N65C © 2006 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com/ Page 5/6Rev.05

V DS Driver R G Same Type as DUT V GS

• dv/dt controlled by R G S controlled by pulse period V D D L L I S I S Fig. 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms V V GS ( Driver ) I S ( DUT ) V DS ( DUT ) V DD Body Diode Forward Volta g e Dro p V f I FM , Body Diode Forward Current Body Diode Reverse Current I RM Body Diode Recovery dv/dt di/dt D = Gate Pulse Width V V GS ( Driver ) I S ( DUT ) V DS ( DUT ) V DD Body Diode Forward Volta g e Dro p V f I FM , Body Diode Forward Current Body Diode Reverse Current I RM Body Diode Recovery dv/dt di/dt D = Gate Pulse Width TSF8N65C © 2006 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com/ Page 6/6Rev.05