TSP740M TRUESEMI | Alldatasheet

Document overview

  • Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
  • PDF pages: 9

Technical content

Features

  • 10.5A,400V,Max.RDS(on)=0.53 Ω @ VGS =10V
  • Low gate charge(typical 30nC)
  • High ruggedness
  • Fast switching
  • 100% avalanche tested
  • Improved dv/dt capability * Drain current limited by maximum junction temperature.

www.truesemi.com © 2015 Truesemi Semiconductor Corporation TSP740M/TSF740M Ver.B1 Electrical Characteristics TJ=25 ℃ unless otherwise specified Symbol Parameter Test Conditions Min Typ Max Units IS Continuous Source-Drain Diode Forward Current -- -- 10.5 A ISM Pulsed Source-Drain Diode Forward Current -- -- 42.0 VSD Source-Drain Diode Forward Voltage IS =10.5A, VGS = 0 V -- -- 1.5 V trr Reverse Recovery Time IS =10.5A, VGS = 0 V diF/dt = 100 A/μs (Note 4) -- 300 -- ns㎱ Qrr Reverse Recovery Charge -- 2.5 -- uC On Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 uA㎂ 400 -- -- V △BVDSS / △TJ Breakdown Voltage Temperature Coefficient ID = 250 uA, Referenced to 25℃ -- 0.6 -- V/℃ IDSS Zero Gate Voltage Drain Current VDS = 400 V, VGS = 0 V -- -- 1 uA VDS = 320 V, TJ = 125℃ -- -- 10 uA IGSSF Gate-Body Leakage Current,Forward VGS = 30 V, VDS = 0 V -- -- 100 nA㎁ IGSSR Gate-Body Leakage Current,Reverse VGS =- 30 V, VDS = 0 V -- -- -100 nA㎁ Off Characteristics Ciss Input Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 870 -- pF㎊ Coss Output Capacitance -- 250 -- pF㎊ Crss Reverse Transfer Capacitance -- 85 -- pF Dynamic Characteristics td(on) Turn-On Time VDS = 200 V, ID = 10.5A, RG = 25 Ω (Note 4,5) -- 15 -- ns tr Turn-On Rise Time -- 90 -- ns㎱ td(off) Turn-Off Delay Time -- 80 -- ns㎱ tf Turn-Off Fall Time -- 80 -- ns㎱ Qg Total Gate Charge VDS = 320 V, ID = 10.5A, VGS = 10 V (Note 4,5) -- 30 -- nC Qgs Gate-Source Charge -- 4.0 -- nC Qgd Gate-Drain Charge -- 15 -- nC Switching Characteristics Source-Drain Diode Maximum Ratings and Characteristics VGS Gate Threshold Voltage VDS = VGS, ID = 250 uA㎂ 2.0 -- 4.5 V RDS(ON) Static Drain-Source On-Resistance VGS = 10 V, ID =5.25A -- 0.43 0.53 Ω NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L=6mH, IAS=10.5A, VDD=50V, RG=25 Ω,Starting TJ=25 ℃ 3. ISD≤10.5A, di/dt ≤ 200A/us, VDD ≤ BVDSS, Starting TJ = 25 ℃ 4. Pulse Test: Pulse width ≤ 300us, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics

www.truesemi.com © 2015 Truesemi Semiconductor Corporation TSP740M/TSF740M Ver.B1 Fig 12. Gate Charge Test Circuit & Waveform Fig 13. Resistive Switching Test Circuit & Waveforms Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms EAS = LL IAS 2 ---- 2 Vin VDS 10% 90% td(on) tr t on t off td(off) tf Charge VGS 10V Qg Qgs Qgd VDD VDS VDD ( 0.5 rated VDS ) 10V VDS RL DUT RG 3mA VGS DUT VDS 300nF 50KΩ 200nF 12V Same Type as DUT 10V DUT RG L I D BVDSS t p VDD IAS VDS (t) ID (t) Time

www.truesemi.com © 2015 Truesemi Semiconductor Corporation TSP740M/TSF740M Ver.B1 Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT VDS Driver RG Same Type as DUT VGS • dv/dt controlled by RG

  • IS controlled by pulse period VDD L I S 10V VGS ( Driver ) I S ( DUT ) VDS ( DUT ) VDD Body Diode Forward Voltage Drop Vf IFM , Body Diode Forward Current Body Diode Reverse Current IRM Body Diode Recovery dv/dt di/dt D = Gate Pulse Width

www.truesemi.com © 2015 Truesemi Semiconductor Corporation TSP740M/TSF740M Ver.B1 Package Dimension TO-220

www.truesemi.com © 2015 Truesemi Semiconductor Corporation TSP740M/TSF740M Ver.B1 Package Dimension TO-220F