TSF20U45C TSC | Alldatasheet

Document overview

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Technical content

  • Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability SYMBOL UNIT V RRM V IRRM A dV/dt V/ μs VBR V IF = 10A IF = 20A IF = 10A IF = 20A T J = 25°C μA TJ = 125°C mA RθjC OC/W TJ OC TSTG OC Note 1: 2.0 μs Pulse Width, f=1.0 kHz Document Number: DS_D1401024 Version: C14 Molding compound meets UL 94 V-0 flammability rating Base P/N with suffix "G" on packing code - halogen-free, RoHS compliant Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 1A whisker test TSF20U45C thru TSF20U60C 0.5 100 6045 TSF20U45C TSF20U60C 45 60 180 0.60 0.47 Weight: 1.7g (approximately) - Halogen-free according to IEC 61249-2-21 definition

FEATURES

V A Polarity: As marked MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS(TA=25oC unless otherwise noted) Peak repetitive reverse surge current (Note 1) 200 IF(AV) Voltage rate of change (Rated VR) Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load per diode 10000 IFSM Isolation voltage from terminal to heatsink t = 1 min VAC - 55 to +150 Typical thermal resistance per diode IR VF 1500 2000 500 Taiwan Semiconductor A Maximum instantaneous reverse current per diode at rated reverse voltage - Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC per device Case: ITO-220AB per diode MECHANICAL DATA Mounting torque: 5 in-lbs. max. Maximum repetitive peak reverse voltage Trench MOS Barrier Schottky Rectifier Maximum average forward rectified current VF 0.65 0.47 PARAMETER TJ = 25°C V 0.60 TJ = 125°C Note 2: Pulse Test with Pulse Width=300 μs, 1% Duty Cycle Operating junction temperature range Storage temperature range Maximum instantaneous forward voltage per diode ( Note2 ) 0.50 0.51 Breakdown voltage ( IR =1.0mA, Ta =25°C ) - 55 to +150

PART NO. Document Number: DS_D1401024 Version: C14 PACKING CODE GREEN COMPOUND CODE PACKAGE PACKING TSF20UxxC (Note 1) C0 Suffix "G" TSF20U60C C0 TSF20U60C C0 TSF20U60C C0G TSF20U60C C0 G Green compound ITO-220AB 50 / Tube Note 1: "xx" defines voltage from 45V (TSF20U45C) to 60V (TSF20U60C) PREFERRED P/N PART NO. PACKING CODE GREEN COMPOUND CODE

DESCRIPTION

RATINGS AND CHARACTERISTICS CURVES TSF20U45C thru TSF20U60C Taiwan Semiconductor (TA=25oC unless otherwise noted)

ORDERING INFORMATION

0.01 0.1 100 10 20 30 40 50 60 70 80 90 100 TJ=25oC TJ=100oC TJ=125oCTSF20U45C 0.01 0.1 100 0 0.2 0.4 0.6 0.8 TJ=25oC TJ=125oC TJ=150oC TJ=100oC FIG. 2 TYPICAL FORWARD CHARACTERISTICS TSF20U45C 0 25 50 75 100 125 150 WITH HEATSINK 4in x 6in x 0.25in Al-Plate FIG.1 FORWARD CURRENT DERATING CURVE TSF20U45C TSF20U60C AVERAGE FORWARD CURRENT (A) INSTANTANEOUS FORWARD CURRENT (A) INSTANTANEOUS REVERSE CURRENT (mA) FIG. 4 TYPICAL REVERSE CHARACTERISTICS CASE TEMPERATURE (oC) FORWARD VOLTAGE (V) PERCENT OF RATED PEAK REVERSE VOLTAGE.(%) 0.01 0.1 100 0 0.2 0.4 0.6 0.8 Tj=25oC Tj=125oC Tj=150oC Tj=100oC FIG. 3 TYPICAL FORWARD CHARACTERISTICS Tj=85oC TSF20U60C INSTANTANEOUS FORWARD CURRENT (A) FORWARD VOLTAGE (V)

PACKAGE OUTLINE DIMENSIONS Min Max Min Max A 4.30 4.70 0.169 0.185 B 2.50 3.16 0.098 0.124 C 2.30 2.96 0.091 0.117 D 0.46 0.76 0.018 0.030 E 6.30 6.90 0.248 0.272 F 9.60 10.30 0.378 0.406 G 3.00 3.40 0.118 0.134 H 0.95 1.45 0.037 0.057 I 0.50 0.90 0.020 0.035 J 2.40 3.20 0.094 0.126 K 14.80 15.50 0.583 0.610 L - 4.10 - 0.161 M 12.60 13.80 0.496 0.543 N - 1.80 - 0.071 O 2.41 2.67 0.095 0.105 P/N = Specific Device Code G = Green Compound YWW = Date Code F = Factory Code Document Number: DS_D1401024 Version: C14 MARKING DIAGRAM DIM. Unit (mm) Unit (inch) TSF20U45C thru TSF20U60C Taiwan Semiconductor 100 1000 10000 0.1 1 10 100 f=1.0MHz Vslg=50mVp-p TSF20U45C TSF20U60C ___ ----- CAPACITANCE (pF) FIG. 6 TYPICAL JUNCTION CAPACITANCE REVERSE VOLTAGE (V) 0.01 0.1 100 10 20 30 40 50 60 70 80 90 100 Tj=25oC Tl=125oC Tj=100oC Tj=150oC Tj=85oC TSF20U60C INSTANTANEOUS REVERSE CURRENT (mA) FIG. 5 TYPICAL REVERSE CHARACTERISTICS PERCENT OF RATED PEAK REVERSE VOLTAGE.(%)