TSF20U100C ISC | Alldatasheet
Document overview
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Technical content
isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark1 SchottkyBarrierRectifier TSF20U100C
FEATURES
- Plasticmaterial usedcarriers UnderwriterLaboratory
- Metalsiliconjunction,majoritycarrierconduction
- LowPower Loss,highEfficiency
- Guardring forovervoltage protection
- High SurgeCapability,High CurrentCapability
- Minimum Lot-to-Lotvariationsforrobustdevice performanceandreliable operation
APPLICATIONS
- Forusein lowvoltage,high frequencyinverters,free wheeling and polarity protection applications. ABSOLUTEMAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRWM VR PeakRepetitiveReverseVoltage WorkingPeakReverseVoltage DCBlockingVoltage 100 V IF(AV) AverageRectified perdevics ForwardCurrent perdiode 10 A IFSM NonrepetitivePeakSurgeCurrent 8.3ms single half sine-wave superimposed onratedloadconditions 150 A TJ JunctionTemperature -55~150 ℃ Tstg StorageTemperatureRange -55~150 ℃ dv/dt VoltageRateofChange(RatedVR) 10000 V/μs
isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark2 SchottkyBarrierRectifier TSF20U100C THERMALCHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rthj-c ThermalResistance,JunctiontoCase 4.0 ℃/W ELECTRICALCHARACTERISTICS(PulseTest:PulseWidth=300μs,DutyCycle≤1%) SYMBOL PARAMETER CONDITIONS MAX UNIT VF MaximumInstantaneousForwardVoltage IF=10A;Tc=25℃ 0.79 V IF=10A;Tc=125℃ 0.68 IR MaximumInstantaneousReverseCurrent VR=VRWM;Tc=25℃ 0.5 mA VR=VRWM;Tc=125℃ 25