TSF2080C TSC | Alldatasheet

Document overview

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Technical content

  • Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability SYMBOL UNIT V RRM V IRRM A EAS mJ dV/dt V/ μs VAC V VBR V IF = 5A IF = 10A IF = 5A IF = 10A TJ = 25°C μA TJ = 125°C mA RθJC OC/W TJ OC TSTG OC Note 1: 2.0μs Pulse width, f=1.0KHz Document Number: DS_D1309047 Version:B13 Taiwan Semiconductor TSF2080C Non-repetitive avalanche energy at L=60mH, per diode A Polarity: As marked MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS(TA=25oC unless otherwise noted)

FEATURES

Maximum repetitive peak reverse voltage Note 3: Mount on heatsink size of 4in x 6in x 0.25in Al-plate IR 0.77 TJ = 25°C Dual High-Voltage Trench MOS Barrier Schottky Rectifier 80 - - - 55 to + 150 Isolation voltage from terminal to heatsink t = 1 min - 55 to + 150 Typical thermal resistance (Note 3) Instantaneous reverse current per diode at rated reverse voltage Peak repetitive reverse surge current (Note 1) 0.5 VF 1500 Voltage rate of change (Rated VR) Molding compound meets UL 94 V-0 flammability rating Maximum average forward rectified current MECHANICAL DATA Mounting torque: 5 in-lbs. max. 110 Note 2: Pulse test with pulse width=300μs, 1% duty cycle Operating junction temperature range Storage temperature range - Halogen-free according to IEC 61249-2-21 definition TSF2080C A10 PARAMETER per diode - Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC per device Case: ITO-220AB MIN. 0.70 VF 0.67 Terminal: Matte tin plated leads, solderable per JESD 22-B102 Weight: 1.7 grams IF(AV) Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load per diode 10000 100 TJ = 125°C 0.62 IFSM TYP. 0.52 Breakdown voltage ( IR =1.0mA ) Instantaneous forward voltage per diode ( Note2 ) ITO-220AB 600 -1 0 2 0 -2 0 0.48 - MAX.

Document Number: DS_D1309047 Version:B13

ORDERING INFORMATION

RATINGS AND CHARACTERISTICS CURVES TSF2080C Taiwan Semiconductor (TA=25oC unless otherwise noted) PART NO. PACKING CODE PACKAGE PACKING TSF2080C C0 ITO-220AB 50 / Tube PREFERRED P/N PART NO. PACKING CODE DESCRIPTION TSF2080C C0 TSF2080C C0 0.001 0.01 0.1 100 10 20 30 40 50 60 70 80 90 100 TJ=25oC TJ=100oC TJ=125oC TJ=150oC 100 1000 10000 0.1 1 10 100 f=1.0MHz Vsig=50mVp-p 0.01 0.1 100 TJ=25oC TJ=125oC TJ=150oC TJ=100oC FIG. 2 TYPICAL FORWARD CHARACTERISTICS 0 25 50 75 100 125 150 WITH HEATSINK 4in x 6in x 0.25in Al-Plate FIG.1 FORWARD CURRENT DERATING CURVE AVERAGE FORWARD CURRENT (A) INSTANTANEOUS FORWARD CURRENT (A)CAPACITANCE (pF) INSTANTANEOUS REVERSE CURRENT (mA) FIG. 4 TYPICAL JUNCTION CAPACITANCEFIG. 3 TYPICAL REVERSE CHARACTERISTICS CASE TEMPERATURE (oC) FORWARD VOLTAGE (V) REVERSE VOLTAGE (V)PERCENT OF RATED PEAK REVERSE VOLTAGE.(%)

PACKAGE OUTLINE DIMENSIONS Min Max Min Max A 4.30 4.70 0.169 0.185 B 2.50 3.16 0.098 0.124 C 2.30 2.96 0.091 0.117 D 0.46 0.76 0.018 0.030 E 6.30 6.90 0.248 0.272 F 9.60 10.30 0.378 0.406 G 3.00 3.40 0.118 0.134 H 0.95 1.45 0.037 0.057 I 0.50 0.90 0.020 0.035 J 2.40 3.20 0.094 0.126 K 14.80 15.50 0.583 0.610 L - 4.10 - 0.161 M 12.60 13.80 0.496 0.543 N - 1.80 - 0.071 O 2.41 2.67 0.095 0.105 P/N = Specific Device Code YWW = Date Code F = Factory Code Document Number: DS_D1309047 Version:B13 TSF2080C Taiwan Semiconductor DIM. Unit(mm) Unit(inch) MARKING DIAGRAM