TSF10U60C TSC | Alldatasheet

Document overview

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Technical content

  • Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability SYMBOL UNIT V RRM V dV/dt V/ μs VAC V V IF = 5A IF = 10A IF = 5A Tj = 125°C Tj = 25°C μA Tj = 125°C mA R θjC OC/W TJ OC TSTG OC Document Number: DS_D1401023 Version: B14 - Halogen-free according to IEC 61249-2-21 definition Molding compound meets UL 94 V-0 flammability rating Base P/N with suffix "G" on packing code - halogen-free, RoHS compliant Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 1A whisker test Maximum average forward rectified current Storage temperature range - 55 to +150 Voltage rate of change (rated VR) 10000 150 MAX. Taiwan Semiconductor

FEATURES

  • Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC MECHANICAL DATA Trench MOS Barrier Schottky Rectifier A Maximum repetitive peak reverse voltage Maximum instantaneous forward voltage per diode (Note1) IFSM Breakdown voltage ( IR =1.0mA, Ta =25°C ) VBR Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load per diode Note 1: Pulse Test with Pulse Width=300 μs, 1% Duty Cycle TSF10U60C Tj = 25°C 0.54 PARAMETER Min. TYP. TSF10U60C per device 0.62 2000 0.42-0 . 3 9 0.44 Operating junction temperature range - 55 to +150 IR 100 0.48 V Case: ITO-220AB Mounting torque: 5 in-lbs. max. Weight: 1.7g (approximately) Maximum instantaneous reverse current per diode at rated reverse voltage Polarity: As marked per diode IF(AV) Isolation voltage from terminal to heatsink t = 1 min ITO-220AB MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS(TA=25oC unless otherwise noted) Typical thermal resistance per diode VF 500 60 - A

PART NO. Document Number: DS_D1401023 Version: B14 TSF10U60C C0 TSF10U60C C0 TSF10U60C C0G TSF10U60C C0 G Green compound PACKING TSF10U60C C0 Suffix "G" ITO-220AB 50 / Tube (TA=25oC unless otherwise noted) RATINGS AND CHARACTERISTICS CURVES PREFERRED P/N PART NO. PACKING CODE GREEN COMPOUND CODE EXAMPLE

DESCRIPTION

ORDERING INFORMATION

PACKING CODE GREEN COMPOUND CODE PACKAGE 0.01 0.1 100 10 20 30 40 50 60 70 80 90 100 Tj=25oC Tj=100oC Tj=125oC Tj=150oC 100 1000 10000 0.1 1 10 100 f=1.0MHz Vsig=50mVp-p 0.01 0.1 100 0 0.2 0.4 0.6 0.8 Tj=25oC Tj=125oC Tj=150oC Tj=100oC FIG. 2 TYPICAL FORWARD CHARACTERISTICS 0 25 50 75 100 125 150 WITH HEATSINK 4in x 6in x 0.25in Al-Plate FIG.1 FORWARD CURRENT DERATING CURVE AVERAGE FORWARD CURRENT (A) INSTANTANEOUS FORWARD CURRENT (A)CAPACITANCE (pF) INSTANTANEOUS REVERSE CURRENT (mA) FIG. 4 TYPICAL JUNCTION CAPACITANCEFIG. 3 TYPICAL REVERSE CHARACTERISTICS CASE TEMPERATURE (oC) FORWARD VOLTAGE (V) REVERSE VOLTAGE (V)PERCENT OF RATED PEAK REVERSE VOLTAGE.(%)

PACKAGE OUTLINE DIMENSIONS Min Max Min Max A 4.30 4.70 0.169 0.185 B 2.50 3.16 0.098 0.124 C 2.30 2.96 0.091 0.117 D 0.46 0.76 0.018 0.030 E 6.30 6.90 0.248 0.272 F 9.60 10.30 0.378 0.406 G 3.00 3.40 0.118 0.134 H 0.95 1.45 0.037 0.057 I 0.50 0.90 0.020 0.035 J 2.40 3.20 0.094 0.126 K 14.80 15.50 0.583 0.610 L - 4.10 - 0.161 M 12.60 13.80 0.496 0.543 N - 1.45 - 0.057 O 2.41 2.67 0.095 0.105 P/N = Specific Device Code G = Green Compound YWW = Date Code F = Factory Code Document Number: DS_D1401023 Version: B14 TSF10U60C Taiwan Semiconductor MARKING DIAGRAM DIM. Unit (mm) Unit (inch)