TSDF1920W VISHAY | Alldatasheet

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High transition frequency fT = 24 GHz Low feedback capacitance Emitter pins are thermal leads 16712 TSDF1920W Marking: YH3 Plastic case (SOT 343R) 1 = Emitter, 2 = Base, 3 = Emitter, 4 = Collector Absolute Maximum Ratings Tamb = 25°C, unless otherwise specified Parameter Test Conditions Symbol Value Unit Collector-base voltage VCBO 10 V Collector-emitter voltage VCEO 3.5 V Emitter-base voltage VEBO 1.5 V Collector current IC 40 mA Total power dissipation Tamb 60 °C Ptot 200 mW Junction temperature Tj 150 °C Storage temperature range Tstg –65 to +150 °C Junction ambient on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35 µm Cu R thJA 450 K/W

www.vishay.com 2 (4) Rev. 2, 02–May–02 Document Number 85092 Electrical DC Characteristics Tamb = 25°C, unless otherwise specified Parameter Test Conditions Symbol Min. Typ. Max. Unit Collector cut-off current VCE = 5 V, VBE = 0 ICES 100 µA Collector-base cut-off current VCB = 5 V, IE = 0 ICBO 100 nA Emitter-base cut-off current VEB = 1 V, IC = 0 IEBO 1 µA Collector-emitter breakdown voltageIC = 1 mA, IB = 0 V(BR)CEO 3.5 V Collector-emitter saturation voltageIC = 30 mA, IB = 3 mA VCEsat 0.1 0.25 V DC forward current transfer ratioVCE = 2 V, IC = 20 mA hFE 50 100 150 Electrical AC Characteristics Tamb = 25°C, unless otherwise specified Parameter Test Conditions Symbol Min. Typ. Max. Unit Transition frequency VCE = 2 V, IC = 25 mA, f = 1 GHz fT 24 GHz Collector-base capacitanceVCB = 2 V, f = 1 MHz C cb 0.15 0.3 pF Collector-emitter capacitanceVCE = 2 V, f = 1 MHz C ce 0.4 pF Emitter-base capacitance VEB = 0.5 V, f = 1 MHz C eb 0.6 pF Noise figure VCE = 2 V, IC = 5 mA, ZS = ZSopt, ZL = ZLopt, f = 2 GHz F 1.2 dB Power gain, maximum stable gain VCE = 2 V, IC = 25 mA, ZS = ZSopt, ZL = ZLopt, f = 2 GHz G pe = Gms *) 19 dB Transducer gain VCE = 2 V, IC = 25 mA, ZS = ZL= 50 Ω , f = 2 GHz | S21e | 2 13.5 16.4 dB Third order intercept point at output VCE = 2 V, IC = 25 mA, ZS = ZL= 50 Ω , f = 2 GHz IP3 22 dBm 1 dB compression point VCE = 2 V, IC = 25 mA, ZS = ZL= 50 Ω , f = 2 GHz P–1dB 12 dBm *) Gms = | S21e/S12e |

3 (4) www.vishay.comDocument Number 85092 Rev. 2, 02–May–02 Dimensions of TSDF1920W in mm 96 12238

www.vishay.com 4 (4) Rev. 2, 02–May–02 Document Number 85092 Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423