TSB772_07 TSC | Alldatasheet
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TSB772 Low Vcesat PNP Transistor 1/4 Version: A07 TO-126 PRODUCT SUMMARY BVCBO -50V BVCEO -50V IC -3A VCE(SAT) -0.5V @ IC / IB = -2A / -200mA Features ● Low VCE(SAT) -0.3 @ IC / IB = 2A / 200mA (Typ.) ● Complementary part with TSD882 Structure ● Epitaxial Planar Type ● PNP Silicon Transistor Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Symbol Limit Unit Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -50 V Emitter-Base Voltage VEBO -5 V DC -3 Collector Current Pulse IC -7 (note) A Ta = 25oC 1 Collector Power Dissipation Tc = 25oC PD 10 W Operating Junction Temperature TJ +150 oC Operating Junction and Storage Temperature Range TSTG - 55 to +150 oC Note: Single pulse, Pw≤350us, Duty≤2% Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Collector-Base Breakdown Voltage IC = -50uA, IE = 0 BVCBO -50 -- -- V Collector-Emitter Breakdown Voltage IC = -1mA, IB = 0 BVCEO -50 -- -- V Emitter-Base Breakdown Voltage IE = -50uA, IC = 0 BVEBO -5 -- -- V Collector Cutoff Current VCB = -30V, IE = 0 ICBO -- -- -1 uA Emitter Cutoff Current VEB = 3V, IC = 0 IEBO -- -- -1 uA Collector-Emitter Saturation Voltage IC / IB = -2A / -200mA *VCE(SAT) -- -0.3 -0.5 V Base-Emitter Saturation Voltage IC / IB = -2A / -200mA *VBE(SAT) -- -1 -2 V DC Current Transfer Ratio VCE = -2V, IC = -1A *hFE 100 -- 500 Transition Frequency VCE =-5V, IC=-100mA, f=100MHz fT -- 80 -- MHz Output Capacitance VCB = -10V, f=1MHz Cob -- 55 -- pF * Pulse Test: Pulse Width ≤380uS, Duty Cycle≤2% Pin Definition: 1. Emitter 2. Collector 3. Base
TSB772 Low Vcesat PNP Transistor 3/4 Version: A07 TO-126 Mechanical Drawing
TSB772 Low Vcesat PNP Transistor 4/4 Version: A07