TSD4M150 STMICROELECTRONICS | Alldatasheet

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S G S-THONSON 30E D M@™ 7929237 0030538 4 mm TAAS _~ ky, SGS-THOMSON TSD4M150F a S/ i MICROELECTRONICS TSD4M150V N - CHANNEL ENHANCEMENT MODE ISOFET POWER MOS TRANSISTOR MODULE Voss to » HIGH CURRENT POWER MOS MODULE ‘ 2 » VERY LOW Rin JUNCTION TO CASE @®, x = DUAL SOURCE CONTACTS FAG [Ske . = VERY LARGE SOA - LARGE PEAK POWER Se on Ye - CAPABILITY 1 yA KSA » ISOLATED CASE (2500V RMS) 3 a a > VA » EASY TO MOUNT & i » VERY LOW INTERNAL PARASITIC INDUCTANCE (TYPICALLY < 5 ns) TSD4M150V TSD4M150F = AVALANCHE RUGGEDNESS TECHNOLOGY ISOTOP (SEE IRFP150 FOR RATING) INDUSTRIAL APPLICATIONS: : ree parce CONVERTERS INTERNAL SCHEMATIC DIAGRAM » MOTOR CONTROL ~ OUTPUT STAGE FOR PWM, ULTRASONIC 3 : - 1 ~~ ABSOLUTE MAXIMUM RATINGS ‘Symbol ___ Parameter _ Value unit | Vos Drain-Source Voltage (Vas = 0) _ 100 _ v _ Voor _|Drain-Gate Voltage (Ras = 20 k0) | _ 100 ftv] |Gate-Source Voltage _ £20 _ ——_ |_to __| Drain Current (continuous) at Te = 25 °C. _| 135 | lp _|Drain Current (continuous) at Te = 100 °C __ 85 — [ad tom(e) Drain Current (pulsed) _ __ 500 | A Prot__|Total Dissipation at To = 25 °C ee 500 we Derating Factor _ _ 4 __| wee Tsig | Storage Temperature _ __ 85 to 150 °C — Tj__|Max. Operating Junction Temperature 150 2c Viso {Insulation Withstand Voltage (AC-RMS) _ 2500 . vit (+) Pulse width limited by sate operating area March 1990 15 339

~ 30 D mm 7929237 0030539 b TSD4M150F/V ee nee THERMAL DATA “7-39. 6B Rinj-caso [Thermal Resistance Junction-Case Max 0.25 °cIw Rine-n |Thermal Resistance Case-Heatsink With Conductive Grease Applied Max} 0.05 | CCW ELECTRICAL CHARACTERISTICS (Tease = 25 °C unless otherwise specified) OFF ‘Symbol Parameter Test Conditions Min. | Typ. | Max. | Unit Vienjoss | Drain-Source Ip=1mA Vas =0 v Breakdown Voltage loss Zero Gate Voltage Vos = Max Rating 400 pA Drain Current (Vas = 0) |Vos = Max Rating x 0.8 To = 125°C 2 mA lass | Gate-Body Leakage Vas = + 20V £400) nA Current (Vos = 0) a oe ee ee ON (#) | Vestn [Gate Threshold Voltage |Vos = Vas Ip = 1 mA f2] [a4{v i Ros(on) [Static Drain-Source |Vas=10V In =70A 0.014} a On Resistance DYNAMIC [symbol | Parameter | Test Conditions Min. | Typ. | Max. | Unit Forward Vos=25V Ip=70A 20 Transconductance Ciss Input Capacitance Vos=25V f=1MHz Ves=0 11200] pF Coss | Output Capacitance 4200 | pF Crs Reverse Transfer 1700 pF Capacitance SWITCHING (INDUCTIVE LOAD) tejon) | Turn-on Time Voo=50V Ip =50A 100 ns (di/dt)on |Turn-on Current Slope |Res =50Q Vas = 10V 250 Aus tao) — | Turn-off Delay Time JL = 100 wH 1100 ns [Fall Time oe 130 | | as SOURCE DRAIN DIODE symbol | Parameter __|__TestCongitions | tin. | Typ. | Max. | Unit | Isp |Source-Drain Current 135 | A Ispm(*) |Source-Drain Current 500 A (pulsed)

1 Veo [Forward On Voltage Iso = 135A Vas =0 f [ [2fv

| tw [Reverse Recovery Isp = 135 A di/dt = 100 A/us 400 ns Time (*) Pulsed: Pulse duration = 300 ps, duty cycle 1.5 % (+) Pulse width limited by safe operating area. Be seserHomson

340 MY/ snskenecmoncs

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30E D M@ 7929237 0030542 b an ee TSD4M150F/V TG S=THONSON | Source-Drain Diode Forward Characteristics Gate Charge Test Circuit boll) SEER EEE 1-39-15 CO) 00 ECACC eer wl bua Ha wert WS Tyet50°C + AZ jase UTE ody ccc ce __ EERE EEE BAAR EEE EEE Tans O73 EEE EAEEEEEEEEEE tm fem, J MAnAET AT ANMAURAGA a LEAT ATT Pel TT SL Pwo w LEAT TET i on 0 ot 15 Veal Test Circuit For Inductive Load Switching Diode Reverse Recovery Time Waveform and Diode Reverse Recovery Times 's0 —* Kz i 7 yeti me AST On By s/s aa lo ec = Re Fol 0.25 Inu — TF Z' a nu Gi Vee _ he Ive ‘ . —_— “ 604870 on . SYM teccrsaasna08 343

-30E D mm™ 7929237 0030780 0 mm ___—C*PACK AGES: eo - Qo S 6 S-THOMSON TA-ZO {8} as ‘ Es y RI ISOTOP as RE (ee Fast-on version Yi 5 sales types with the suffix F ING? MECHANICAL DATA fel fol Paces be |_a_|sis [arr [1.240 [7.208 | A [8 | 62 | 64 [oes | ose | Cs [-o | 76] o6s [aces fo0es| ; NG) oy 6 | 0 [149 [15.1 | 1606 | 0.600 | MO NTT | & tse [202 fe [| © De [+t = Toss] — | a yt bed | [20a [ao7_[ovee [on] |e | a0 [01 [oso [ose | aad |_M [224 [23 | ost | 0.005 | PIN CONNECTIONS |_P_| 195 | 208 [0.076 | 0.080 | Moster [oT* [= [ory - | pin1:Source pin 2: Gate pin 3: Drain pin 4: Source sensings DARLINGTON pin 1: Emitter pin 2: Baset pin 3: Collector pin 4: Base 2 TRANSISTOR _ pin 1: Emitter pin 2: Base . pin 3: Collector pin 4: Emitter sonsing ‘Torque: Mounting 1,3 + 0.2 N+ m (max) Weight: Package 25.5 g a Note: The mechanical data are the same for the 3 pin version (4th pin missing) — = 29 8s 98 581

30E D M@ 75925237 0030781 2 mm PACKAGES __ oe SG S-THOMSON Oe “ T-91-20 (EON ISOTOP q A are << Screw version > SS sales types with the suffix V ON? MECHANICAL DATA A “ i [wm | tnces | [in [ mae [mn [ma | Pe L [a [ars [or7 [1210 [+200] a {No 9} i | [ro [as [as [oer [oreo] an M [-2[sxe" [iss Tose [asso a E [ca [iw [a [oes [028 | [wr [ize [ras | oe [oso] PIN CONNECTIONS [Cw [as2 [254 | a2 | 1.000] vOsEet ["e[ 195] 206 [oars [oow | nintssowee phtvene [ofa [= Jorsrf — | pin 3: Drain pin 4: Source sensings DARLINGTON pin 1: Emitter pin 2: Baset pin 3: Collector pin 4: Base 2 TRANSISTOR pin1:Emitter pin 2: Base pin 3: Collector pin 4: Emitter sensing ‘Torque: Terminal 1.3 + 0.2 N+ m (max) Mounting 1.3 + 0.2 N+ m (max) Weight: Package 29 g 4 Screws: 7.59 Note: The mechanical data are the same for the 3 pin version (4th pin missing) 582

30E D M@@ 7929237 0030762 4 mm PACKAGES ; OF D mm rsedea? 0030782 4 S G S-THOMSON “7-91-20 STS TRANSPACK (TO-240) MECHANICAL DATA . ba ee Pa Q [a [ors [ses [aon fase] [2 [7076 [en26 [3140 | a100| |e [res [2068 [0767 [o009| beet att es eee eilerletsy [-# [es [05 [a7er |ooor| —— a [xT o7e | 084 [0090 [aos] Torque: Tominal 22:05 Nm (max) [2 | e7e| 207 [0107 Parra] Mounting 3.5 + 0.5 N+ m (max) [afi | - [oss] — | Weight: Packago 110g es Accessory 21g Note: The mechanical data are the same for the 2 power pin oo bor 888 Tyoison 583