TSD3GFSH TSC | Alldatasheet
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Technical content
TSD3GFSH – TSD3JFSH Taiwan Semiconductor
1 Version: B2312
3A, 400V - 600V ESD Capability Rectifier
FEATURES
- AEC-Q101 qualified
- High ESD capability
- Glass passivated chip junction
- Low forward voltage drop
- Ideal for automated placement
- Moisture sensitivity level: level 1, per J-STD-020
- RoHS Compliant
- Halogen-free
APPLICATIONS
- General purpose
- Polarity protection MECHANICAL DATA
- Case: SOD-128
- Molding compound meets UL 94V-0 flammability rating
- Terminal: Matte tin plated leads, solderable per J-STD-002
- Meet JESD 201 class 2 whisker test
- Polarity: Indicated by cathode band
- Weight: 0.028g (approximately) KEY PARAMETERS PARAMETER VALUE UNIT IF 3 A VRRM 400 - 600 V IFSM 50 A TJ MAX 175 °C Package SOD-128 Configuration Single die SOD-128 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL TSD3GFSH TSD3JFSH UNIT Marking code on the device D3GFS D3JFS Repetitive peak reverse voltage VRRM 400 600 V Reverse voltage, total rms value VR(RMS) 280 420 V Forward current IF 3 A Surge peak forward current single half sine-wave superimposed on rated load t = 8.3ms IFSM A t = 1.0ms 145 Junction temperature TJ -40 to +175 °C Storage temperature TSTG -55 to +175 °C
TSD3GFSH – TSD3JFSH Taiwan Semiconductor
2 Version: B2312
Junction-to-lead thermal resistance RӨJL 15 °C/W Junction-to-ambient thermal resistance RӨJA 70 °C/W Junction-to-case thermal resistance RӨJC 15 °C/W Thermal Performance Note: Units mounted on PCB (5mm x 5mm Cu pad test board) ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER CONDITIONS SYMBOL TYP MAX UNIT Forward voltage(1) IF = 1.5A, TJ = 25°C VF 0.90 - V IF = 3.0A, TJ = 25°C 0.96 1.1 V IF = 1.5A, TJ = 125°C 0.78 - V IF = 3.0A, TJ = 125°C 0.85 - V Reverse current @ rated VR(2) TJ = 25°C IR - 1 µA TJ = 125°C 6 - µA Junction capacitance 1MHz, VR = 4.0V CJ 18 - pF Notes: 1. Pulse test with PW = 0.3ms 2. Pulse test with PW = 30ms IMMUNITY TO ELECTRICAL STATIC DISCHARGE TO THE FOLLOWING STANDARDS (TA = 25°C unless otherwise noted) STANDARD TEST TYPE TEST CONDITIONS SYMBOL CLASS VALUE AEC-Q101-001 Human body mode C=100pF, R=1.5kΩ Vc H3B ≥8kV IEC 61000-4-2 Contact mode C=150pF, R=330Ω x ≥10kV Air-discharge mode C=150pF, R=330Ω 4 ≥15kV ISO 10605 Contact mode C=330pF, R=330Ω L4 ≥15kV
ORDERING INFORMATION
ORDERING CODE(1) PACKAGE PACKING TSD3xFSH SOD-128 14,000/ Tape & Reel Notes: 1. “x” defines voltage from 400V(TSD3GFSH) to 600V(TSD3JFSH)
TSD3GFSH – TSD3JFSH Taiwan Semiconductor
3 Version: B2312
(TA = 25°C unless otherwise noted) Fig.1 Forward Current Derating Curve Fig.2 Typical Junction Capacitance Fig.3 Typical Reverse Characteristics Fig.4 Typical Forward Characteristics Fig.5 Typical Transient Thermal Impedance 0 25 50 75 100 125 150 175 100 1 10 100 f=1.0MHz Vsig=50mVp-p 0.001 0.01 0.1 100 10 20 30 40 50 60 70 80 90 100 TJ=25°C TJ=125°C TJ=150°C TJ=175°C 0.1 Pulse width 300μs 1% duty cycle TJ=25°C TJ=125°C TJ= -40°C TJ=150°C TJ=175°C 0.0001 0.001 0.01 0.1 100 CAPACITANCE (pF) INSTANTANEOUS REVERSE CURRENT (μA) PERCENT OF RATED PEAK REVERSE VOLTAGE (%) INSTANTANEOUS FORWARD CURRENT (A) (A) FORWARD VOLTAGE (V) AVERAGE FORWARD CURRENT (A) REVERSE VOLTAGE (V) LEAD TEMPERATURE (°C) PULSE DURATION (s) TRANSIENT THERMAL IMPEDANCE (°C/W)
TSD3GFSH – TSD3JFSH Taiwan Semiconductor
4 Version: B2312
PACKAGE OUTLINE DIMENSIONS SOD-128 P/N = MARKING CODE YW = DATE CODE F = FACTORY CODE MARKING DIAGRAM SUGGESTED PAD LAYOUT 1.10 0.90 0.10 0.00 0.22 0.10 CSEATING PLANE DETAIL A (SCALE 3:1) 4.00 3.60 B 2.70 2.30 A DETAIL A C 0.80 0.40 1.90 1.60 5.00 4.40 4.10 1.20 2.30 YWF P/N CATHODE INDICATOR
0.13 C A B
NOTES: UNLESS OTHERWISE SPECIFIED 1. ALL DIMENSIONS ARE IN MILLIMETERS. 2. DIMENSIONING AND TOLERANCING PER ASME Y14.5M-2009. 3. PACKAGE OUTLINE REFERENCE: JEDEC DO-221, VARIATION AD, ISSUE B.
4 MODED PLASTIC BODY DIMENSIONS DO NOT
INCLUDE MOLD FLASH. 5. DWG NO. REF: HQ2SD07-SOD128-039 REV A. 0.60 0.30
TSD3GFSH – TSD3JFSH Taiwan Semiconductor
5 Version: B2312
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