SD2918 STMICROELECTRONICS | Alldatasheet
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Technical content
HF/VHF/UHF N-CHANNEL MOSFETs ADVANCE DATA n GOLD METALLIZATION n EXCELLENT THERMAL STABILITY n COMMON SOURCE CONFIGURATION n Pout= 30 W MIN. WITH 18 dB GAIN @ 30 MHz
DESCRIPTION
The SD2918 is a gold metallized N-Channel MOS field-effect RF power transistor. It is intended for use in 50 V DC large signal applications up to
200 MHz
ABSOLUTE MAXIMUM RATINGS (Tcase =2 5oC) Symbol Parameter Value Unit V (BR)DSS Drain Source Voltage 125 V V DGR Drain-Gate Voltage (RGS =1M Ω ) 125 V V GS Gate-Source Voltage ± 20 V ID Drain Current 6 A P DISS Power Dissipation 175 W Tj Max. Operating Junction Temperature 200 oC TSTG Storage Temperature -65 to 150 oC THERMAL DATA R th(j-c) R th(c-s) Junction-Case Thermal Resistance Case-Heatsink Thermal Resistance ∗ 1.0 0.30 oC/W oC/W * Determined using a flat aluminum or copper heatsink with thermal compound applied (Dow Corning 340 or equivalent). M113 epoxy sealed ORDER CODE BRANDING SD2918 TSD2918 1. Drain 3.Gate 2. Source 4. Source
ELECTRICAL SPECIFICATION (Tcase =2 5oC) STATIC Symbol Parameter Min. Typ. Max. Unit V (BR)DSS V GS =0 V I DS = 10 mA 125 V IDSS V GS =0 V V DS =5 0V 1 . 0 m A IGSS V GS =2 0 V V DS =0V 1 µ A V GS(Q) V DS =1 0 V I D =1 0m A 1 . 0 5 . 0 V V DS(ON) V GS =1 0 V I D = 2.5 A 5.0 V gFS V DS =1 0 V I D =2 . 5A 0 . 8 m h o C ISS V GS =0 V V DS =5 0V f=1M H z 5 8 p F C OSS V GS =0 V V DS =5 0V f=1M H z 3 5 . 5 p F C RSS V GS =0 V V DS =5 0V f=1M H z 7 . 5 p F DYNAMIC Symbol Parameter Min. Typ. Max. Unit P OUT f = 30MHz V DD =5 0 V P in =0 . 4 7 5W IDQ =1 0 0m A 3 0 W G PS f = 30MHz V DD =5 0 V P out =3 0W I DQ = 100 mA 18 22 dB η D f = 30MHz V DD =5 0 V P out =3 0W I DQ = 100 mA 50 55 % Load Mismatch f = 30MHz V DD =5 0 V P out =3 0W I DQ =1 0 0m A All Angles 30:1 VSWR IMPEDANCE DATA FREQ. Z IN (Ω )Z DL (Ω ) 30 MHz 24.4 - j 13.4 28.8 + j 7.2 REF. 1022497C SD2918
Capacitance vs Drain-Source Voltage Drain Current vs Gate Voltage Maximum Thermal Resistance vs Case Temperature Gate-Source Voltages vs Case Temperature TYPICAL PERFORMANCE SD2918
Output Power vs Input Power Output Power vs Input Power Output Power vs Voltage Supply Output Power vs Gate Voltage Power Gain & Efficiency vs Output Power TYPICAL PERFORMANCE SD2918
30 MHz Test Circuit Schematic
+50V
30 MHz Test Circuit Component Part List
REF. 7143542A SD2918
30 MHz Test Circuit Photomaster
REF. 7143542A
30 MHz Production Test Fixture
DIM. mm inch A 5.59 5.84 0.220 0.230 B 19.81 20.83 0.780 0.820 C 18.29 18.54 0.720 0.730 D 24.64 24.89 0.970 0.980 E 9.40 9.78 0.370 0.385 F 0.10 0.15 0.004 0.006 G 2.16 2.67 0.085 0.105 H 4.06 4.57 0.160 0.180 I 7.14 0.281 J 6.22 6.48 0.245 0.255 K 3.05 3.30 0.120 0.130 1010936D M113 (.380 DIA 4/L N/HERM W/FLG) MECHANICAL DATA Controlling Dimension: Inches SD2918
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics 1999 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com SD2918