TSD2444_1 TSC | Alldatasheet
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TSD2444 Low Vcesat NPN Transistor 1/4 Version: A08 SOT-23 PRODUCT SUMMARY BVCBO 40V BVCEO 25V IC 800mA VCE(SAT) 40mV @ IC / IB = 50 / 2.5mA Features ● Low VCE(SAT) ● Excellent DC Current Gain Characteristics Structure ● Epitaxial Planar Type ● Complementary to TSB1590CX Base-Emitter on Voltage VCE = 1V, IC = 10mA VBE(ON) -- -- 1.0 V VCE = 1V, IC = 100mA hFE 1 180 -- 560 DC Current Transfer Ratio VCE = 1V, IC = 600mA hFE 2 40 -- -- Transition Frequency VCE = 5V, IC=-100mA fT -- 150 -- MHz Output Capacitance VCB = 10V, f=1MHz Cob -- 15 -- pF * Pulse Test: Pulse width ≤380us, Duty cycle ≤ 2% Pin Definition: 1. Base 2. Emitter 3. Collector
TSD2444 Low Vcesat NPN Transistor 3/4 Version: A08 SOT-23 Mechanical Drawing
TSD2444 Low Vcesat NPN Transistor 4/4 Version: A08