TSD1035

TSD035 STMICROELECTRONICS | Alldatasheet

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Technical content

NaS" FERGEMS Googe aaa oe (THOMSON Seguear Teron FS ae 4 ASYMMETRICAL THYRISTOR s EMICONDUC THYRISTOR ASYMETRIQUE a a ne ASI] - . TENTATIVE DATA _. :

FEATURES

Low loss asymmetrical diffusion structure. IT(PEAK)@20 KHz = 40 Amps Intercigtated gate structure. ed ft fery low with gate assisted tum-off. Fully characterised for operation up to 40 kHz. VDRM UP to 1200 Volts Directly compatible with 220-415 V a.c. mains. APPLICATIONS ta’ 5 High frequency, high power choppers and inverters : 'q' us Welding. Induction Heating, 400 Hz UPS, PWM inverters, Ultrasonic generators. CARACTERISTIQUES GENERALES ‘Structure de diffusion asymétrique & faibles pertes. ‘Structure de géchette amplificatrice. Trés faible TQ avec lextinction assistée par gachette. Caractérisé pour fonctionnement jusqu’a 40 kHz. Compatible avec tensions secteur 220-416 V.

APPLICATIONS

‘Hacheurs et onduleurs haute fréquence, forte puissance : Soudure, Chautfage par induction, Onduleurs ML, Générateurs ultrasan, Alimentations de Gee: TOas secours 400 He, wer

ORDERING INFORMATION

["Wottage | Turn oft es ee TsD 50 035 5 No code . 200 235° 400 435 600 635, 800 835 1000 1035 For Vppm > 1000 V, please consult us. Pour Ve > 1000V, 1200 1235 nous corether ear ‘Type TSD with Vopiy = 600V, and ta’= 5s, order as: TSD 635 ‘September 1983 - 1/6 a THOMSON SEMICONDUCTORS THOMSON ~ 45.; de I 7814 : Tac eeerio tee scasasse Ye 29 IN iomseN A

o. TSD.35 . SRE eS BLOCKING STATE CHARACTERISTICS . Repetitive peak reverse voltage (for all voltage classes) VARM tov Max. forward leakage curent bam 5 mA Ty= 126°C @ VoRM Max, reverse leakage current laam 100 mA Ty = 128°C @ Van CONDUCTING STATE CHARACTERISTICS. Ty = 125°C Togge = 80°C Peak forward current at 20 kHz HIPEAK) 40 A | HIT sine Duty aE so He Peak one le surge current = o = = Ce ore ate itsm 400 A Ty = 125°C tp= 10ms Vp=0 12 (for fusing) - 800 2s Ty > 10 ms ‘Max. forward voltage drop VIM 24 Vv Ty = 25°C tty = 100A SWITCHING CHARACTERISTICS Ta = 25°C, ty = 404 Gate assisted turn-off time tg Max 5 i. ea Gin/at = 10 A/us : (with feedback diode) Tye 3 dv/dt = 200 V/s (Linear to 0.8 Vana) Vex = - 5V . Ty = 126°C by = 404 tp = 100 ps diet = 10 A/us Typ. turn-off time tq 7 us S$ Vpetv (with feedback diode) dv/dt = 200 V/ps (Linear to 0.6 Vor) Gate open Min. citical on-state di/dt TAeRgpatave Gilat 13 Als Gate supply 20/202 1, < 05s Min. critical off-state dv/at dv/dt 1000 V/us_ Ty = 125°C. Linear to 0.6 VopM Vek = -5V GATE CHARACTERISTICS Max. DC trigger current Iot 200 mA fr). sec Vp=2V RR =30 ~ Max. DC trigger voltage Ver 2 Vv Min. non trigger voltage Veo 02 Vv Ty = 125°C Vp = Vppm AL = 1kO Peak forward current om 2 2A Tp = 10us Peak reverse voltage VpGM 10 OV ° Peak power Pom 60 W Ip= 10s Average power - Peiav) 2 WwW THERMAL AND MECHANICAL CHARACTERISTICS Junction operating temperature range Ty = 4010 + 125°C Storage temperature range Tsig — 4010 + 160°C : Max. thermal resistance case to : : heatsink Fines 04 . : 2/6 _. 248

teu.e0 tv SINUSOIDAL CURRENT PULSE DATA 1 -25</7 $02 Se PARAMETER : FRR tbat tm 2 eee eter Se io (ECHL a

3 Pera} s00

= |e a tH 60 &, LEeiceeeril 11] &

2 Seer

PULSE WIDTH, tp (ps) FI6.4 - ENERGY PEA PULSE FOR SINUSOIDAL PULSES.

908 EE PARAMETER ¢

Coe eri) 4000 EB Cee eS r] 2000

2 EIST et

2 SSeS too ls |

PULSE MIDTH, tp (ps) FIG.2 - MAXIMUM ALLOWABLE PEAK ON-STATE CURRENT VERSUS PULSE WIDTH FOR Te = 65 °C.

0908 PARAMETER :

z _— ee es oe se FEAF} 000 & a a 2000 > Lem Tei TTT seve NOTES ¢ 5 aaniill AKT $0000 4. Vp € 600 Volts. & 402 COUT [PAIN 20000 2. Va < *4 Voit. Ss SE SS} 30000 3. A.C Snubber, C = 22 nF, i FEN AESSBSE 40000 A= 330

2 Eerie SSNS)

2 a et es . 5 eS aii MOREA (Lettie LTTE LT 1 40 102 PULSE HIOTH, ty (ps) FIG.3 ~ HAXIMUM ALLOWABLE PEAK ON-STATE CURRENT VERSUS PULSE WIDTH FOR Tp = 60 °C. . 245

. TRAPEZOIDAL CURRENT PULSE DATA ~~ © 108 SSeS] PARAMETER : 7-2S-/7 FSS Tu .

5 EER oo

8 OE ere A a0

3 Ee ore 400

&, geri tt} Feet Soc a Pee a 4° 410 10! PULSE WIDTH, ty (ys) FIG.4 ~ ENERGY PER PULSE FOR TRAPEZOIDAL PULSES. 908 a PARAMETER : 2 — os a ee SEER PREC EHHIESIF | t000

2 PAIRS Sco} 2000 di/dt = 100 A/ps

~ 45000 5 en i a ee

2 COPS SANTINI Lo |

• 1 10 402 PULSE NIOTH, ty (ys) FIG.5 - MAXIMUM ALLOWABLE PEAK ON-STATE CURRENT VERSUS . PULSE WIDTH FOR Ty = 65 °C. 408 = Ee SE] PARAMETER Sa a EPA See fe = a sO A 4000

2 CA ae ;

= DCO TT 2329 NOTES ELIHU CS ges Ea 2. Vac 4 Volt. B 108 Le 3. A.C Snubber, C = 22 nF, ew GARR SSS R330. & Sear SS SS b PIN INT F PTA eo EEE CNT NT ® LETT PUT 1 oy 410 402 PULSE WIDTH, ty (js) FIG.6 - MAXIMUM ALLOWABLE PEAK ON-STATE CURRENT VERSUS PULSE WIDTH FOR Ty = 80 °C. 246

A = tw Yaro = ——=—| [ff wz 1000 Re E 7 5 ee a. a a ial Y| “ Cerys : VY e foorprperreee i ™~ Y| Bea RA Cooece ees vi & S e TOR og LOR

100 A rr

——s oo oe | y |7 s a eo oe FA 3 es oo oe 5s o a wot é a FOR LOSS a < 7 2 [TET TT catcuatrons 48 WA B LTT) 25 Vio = 2.42 V ii o rp 4 “ 40 200 oO 5 40 4 2 5 410 INSTANTANEOUS ON-STATE VOLTAGE, Vy (V) PULSE BASE WIDTH, t (ms) FIG.7 ~ MAXIMUM ON-STATE CONDUCTION F1G.0 - NON REPETITIVE SUB-CYCLE SURGE CHARACTERISTIC (Ty = 425 °C). ON-STATE CURRENT AND I@t RATING (INITIAL Ty = 426 °c). g *? MITT) . fF an | Jn = =a | Bee wo | 4508 go a oe 5 Po Ws 2 o8 v H GATE BIAS, Vx (V) GATE CURRENT, Ig (A) FIG.9 ~ TYPICAL VARIATION OF EFFECTIVE FIG.40 - REVERSE GATE CHARACTERISTICS. + TUAN-OFF TIME tq* WITH REGATIVE - GATE BIAS. . 247 .

2, LL Te |

8 Eee oe

© ESERIES a oat] LUM tT Te = ! GATE CURRENT, Ig (A) FI6,44 - GATE TRIGGER CHARACTERISTICS. $10 oe = SHE CHIECHIEr HE . Fi ge CUTE ITT @ oo TIE TIE IE TTI f a <a ee ee See q [eat TC © PC Ta a b CIIPCHIL CHIC eeelill Z 0-100 of 0.4 4 40 400 _ TIME, t (s) FIG.42 - TRANSIENT THERMAL IMPEDANCE JUNCTION TO CASE. “i ey , Fal iT out, i LL speeanee IRL fe WC VL LT prot wo fi ‘TO 48 CASE OUTLINE . 248