TSC966 TSC | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 5

Technical content

Features

  • High BVceo, BVcbo
  • High current gain

Ordering Information

Part No. Package Packing TSC966CT B0 TO-92 1Kpcs / Bulk TSC966CT A3 TO-92 2Kpcs / Ammo TSC966CW RPG SOT-223 2.5Kpcs / 13” Reel Note: “G” denote for Halogen Free Product Structure

  • Epitaxial Planar Type Absolute Maximum Rating (TA=25 oC unless otherwise noted) Parameter Symbol Limit Unit Collector-Base Voltage VCBO 600 V Collector-Emitter Voltage VCE S 600 V Collector-Emitter Voltage VCEO 400 V Emitter-Base Voltage VEBO 7 V Collector Current DC IC 0.3 A Pulse 1 Total Power Dissipation @ T A=25 oC TO-92 Ptot 0.9 W SOT-223 1 Operating Junction Temperature TJ +150 oC Operating Junction and Storage Temperature Range T STG - 55 to +150 oC Electrical Specifications (Ta = 25 oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Collector-Base Breakdown Voltage IC = 50uA BV CBO 600 -- -- V Collector-Emitter Saturation Voltage IC = 100uA, VBE= 0 BV C ES 600 -- -- V Collector-Emitter Breakdown Voltage IC = 1mA BV CEO 400 -- -- V Emitter-Base Breakdown Voltage I E = 50uA BV EBO 7 -- -- V Collector-Base Cutoff Current V CB = 600V I CBO -- -- 0.5 uA Collector-Emitter Cutoff Current VC E = 400V I C EO -- -- 1 uA Emitter-Base Cutoff Current V EB = 7V I EBO -- -- 1.5 uA Collector-Emitter Saturation Voltage IC = 50mA, IB = 5mA V CE(SAT) -- -- 0.5 V Base-Emitter Saturation Voltage IC = 50mA, IB = 5mA V BE(SAT) -- -- 1 V DC Current Transfer Ratio VCE = 5V, I C = 1mA h FE 1 100 -- -- VCE = 5V, I C = 20mA h FE 2 90 -- 300 Transition Frequency V CE = 10V, I E= 20mA f T 50 -- -- MHz Output Capacitance V CB = 20V, f=1MHz Cob -- -- 7 pF Pin Definition : 1. Emitter 2. Collector 3. Base Pin Definition : 1. Base 2. Collector 3. Emitter

NPN Silicon Planar High Voltage Transistor 3/5 Version: D12 TO-92 Mechanical Drawing Marking Diagram Y = Year Code M = Month Code (A =Jan, B =Feb, C =Mar, D =Apl, E=May, F=Jun, G =Jul, H =Aug, I=Sep, J=Oct, K =Nov, L=Dec) L = Lot Code TO-92 DIMENSION DIM MILLIMETERS INCHES MIN MAX MIN MAX A 4.30 4.70 0.169 0.185 B 4.30 4.70 0.169 0.185 C 14.30(typ) 0.563(typ) D 0.43 0.49 0.017 0.019 E 1.18 1.28 0.046 0.050 F 3.30 3.70 0.130 0.146 G 1.27 1.31 0.05 0.051 H 0.37 0.43 0.015 0.017

NPN Silicon Planar High Voltage Transistor 4/5 Version: D12 SOT-223 Mechanical Drawing Marking Diagram Y = Year Code M = Month Code for Halogen Free Product (O =Jan, P=Feb, Q =Mar, R =Apl, S=May, T=Jun, U =Jul, V=Aug, W =Sep, X=Oct, Y=Nov, Z=Dec) L = Lot Code SOT-223 DIMENSION DIM MILLIMETERS INCHES MIN MAX MIN MAX A 6.350 6.850 0.250 0.270 B 2.900 3.100 0.114 0.122 C 3.450 3.750 0.136 0.148 D 0.595 0.635 0.023 0.025 E 4.550 4.650 0.179 0.183 F 2.250 2.350 0.088 0.093 G 0.835 1.035 0.032 0.041 H 6.700 7.300 0.263 0.287 I 0.250 0.355 0.010 0.014 J 10 ° 16 ° 10 ° 16 ° K 1.550 1.800 0.061 0.071

NPN Silicon Planar High Voltage Transistor 5/5 Version: D12 Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale.