TSB772 TSC | Alldatasheet

Document overview

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Technical content

Features

— Low VCE (SAT). — Excellent DC current gain characteristics Structure — Epitaxial planar type. — PNP silicon transistor

Ordering Information

Part No. Packing Package TSB772CK Bulk Pack TO-126 Absolute Maximum Rating (Ta = 25 oC unless otherwise noted) Parameter Symbol Limit Unit Collector-Base Voltage V CBO - 50V V Collector-Emitter Voltage V CEO - 50V V Emitter-Base Voltage V EBO - 6 V DC - 3 Collector Current Pulse IC - 7 (note 1) A Collector Power Dissipation TO-126 P D 1.0 W Operating Junction Temperature T J +150 oC Operating Junction and Storage Temperature Range T STG - 55 to +150 oC Note: 1. Single pulse, Pw = 2mS

Electrical Characteristics

Ta = 25 oC unless otherwise noted Parameter Conditions Symbol Min Typ Max Unit Static Collector-Base Voltage I C = - 50uA, IE = 0 BV CBO - 50 -- -- V Collector-Emitter Breakdown Voltage I C = - 1mA, IB = 0 BV CEO - 50 -- -- V Emitter-Base Breakdown Voltage I E = - 50uA, IC = 0 BV EBO - 6 -- -- V Collector Cutoff Current V CB = - 40V, IE = 0 I CBO -- -- - 1 uA Emitter Cutoff Current V EB = - 4V, IC = 0 I EBO -- -- - 1 uA Collector-Emitter Saturation Voltage I C / IB = - 2.0A / - 0.2A V CE(SAT) -- - 0.3 - 0.5 V DC Current Transfer Ratio V CE = - 2V, IC = - 1A h FE 160 -- 350 Transition Frequency V CE = - 5V, IC = - 100mA, f = 100MHz fT -- 80 -- MHz Output Capacitance V CB = - 10V, f=1MHz Cob 55 -- pF Note : pulse test: pulse width <=380uS, duty cycle <=2% TO-126 Pin assignment: TO-126 1. Emitter 2. Collector 3. Base

TSB772 2-2 2003/12 rev. B Electrical Characteristics Curve

TSB772 3-3 2003/12 rev. B TO-126 Mechanical Drawing 1mm E G F D B C H A J K I TO-126 DIMENSION MILLIMETERS INCHES DIM MIN MAX MIN MAX A 8.00 (typ) 0.315(typ) B 4.20 (typ) 0.165 (typ) C 10.58 11.00 0.417 0.433 D 2.00 (typ) 0.079 (typ) E 12.00(typ) 0.472(typ) F 2.50(typ) 0.098 (typ) G 0.74 0.78 0.029 0.031 H 0.8 (typ) 0.031(typ) I 2.56 3.00 0.101 0.118 J 0.38 0.50 0.015 0.020 K 1.1 (typ) 0.043 (typ)