TSB611 STMICROELECTRONICS | Alldatasheet

Document overview

  • Manufacturer or author: STMICROELECTRONICS
  • PDF pages: 24

Technical content

Datasheet sections

  • 1 Absolute maximum ratings and operating conditions
  • 2 Electrical characteristics
  • 3 Application information
  • 3.1 Operating voltages
  • 3.2 Input common-mode range
  • 3.3 Rail-to-rail output
  • 3.4 Input offset voltage drift over temperature
  • 3.5 Long term input offset voltage drift
  • 3.6 ESD structure of TSB611
  • 3.7 Initialization time
  • 4 Package information
  • 4.1 SOT23-5 package information
  • 5 Ordering information
  • 6 Revision history

Features

Low offset voltage: 1 mV max Low power consumption: 125 µA max. at 36 V Wide supply voltage: 2.7 to 36 V Gain bandwidth product: 560 kHz typ Unity gain stable Rail-to-rail output Input common mode voltage includes ground High tolerance to ESD: 4 kV HBM Extended temperature range: -40 °C to 125 °C Automotive qualification

Applications

Description

The TSB611 single operational amplifier (op amp) offers an extended supply voltage operating range and rail -to-rail output. It also offers an excellent speed/power consumption ratio with 560 kHz gain bandwidth product while consuming less than 125 µA at 36V supply voltage. The TSB611 operates over a wide temperature range from -40 °C to 125°C making this device ideal for industrial and automotive applications. Thanks to its small package size, the TSB611 can be used in applications where space on the board is limited. It can thus reduce the overall cost of the PCB. SOT23-5 OUT VCC- IN+ VCC+ IN- 3 4 + -

1 Absolute maximum ratings and operating conditions

Table 1: Absolute maximum ratings (AMR) Symbol Parameter Value Unit Vcc Supply voltage (1) 40 V Vid Differential input voltage (2) ±Vcc Vin Input voltage (Vcc-) - 0.2 to (Vcc+) + 0.2 Iin Input current (3) 10 mA Tstg Storage temperature -65 to 150 °C Rthja Thermal resistance junction to ambient (4)(5) 250 °C/W Tj Maximum junction temperature 150 °C ESD HBM: human body model (6) 4000 V MM: machine model (7) 200 CDM: charged device model (8) 1500 Latch-up immunity 200 mA Notes: (1)All voltage values, except differential voltage are with respect to network ground terminal. (2)Differential voltages are the non-inverting input terminal with respect to the inverting input terminal. (3)Input current must be limited by a resistor in series with the inputs. (4)Rth are typical values. (5)Short-circuits can cause excessive heating and destructive dissipation. (6)According to JEDEC standard JESD22-A114F. (7)According to JEDEC standard JESD22-A115A. (8)According to ANSI/ESD STM5.3.1. Table 2: Operating conditions Symbol Parameter Value Unit Vcc Supply voltage 2.7 to 36 V Vicm Common mode input voltage range (Vcc-) - 0.1 to (Vcc+) - 1 Toper Operating free air temperature range -40 to 125 °C

2 Electrical characteristics

Table 3: Electrical characteristics at Vcc+ = 2.7 V with Vcc- = 0 V, Vicm = Vcc/2, Tamb = 25 °C, and RL = 10 kΩ connected to Vcc/2 (unless otherwise specified) Symbol Parameter Conditions Min. Typ. Max. Unit DC performance Vio Input offset voltage mV 1.6 ΔVio/ΔT Input offset voltage drift -40 °C < T< 125 °C 1.8 6 μV/°C Iio Input offset current 1 5 nA -40 °C < T< 125 °C Iib Input bias current 5 10 -40 °C < T< 125 °C CMR Common mode rejection ratio: 20 log (ΔVicm/ΔVio) Vicm = 0 V to Vcc+ -1 V, Vout = Vcc/2 90 115 dB -40 °C < T< 125 °C 85 Avd Large signal voltage gain Vout = 0.5 V to (Vcc+ - 0.5 V) 98 102 -40 °C < T< 125 °C 94 VOH High level output voltage (voltage drop from Vcc+) 13 25 mV -40 °C < T< 125 °C VOL Low level output voltage 26 30 -40 °C < T< 125 °C Iout Isink Vout = Vcc 13 20 mA -40 °C < T< 125 °C 10 Isource Vout = 0 V 20 28 -40 °C < T< 125 °C 7 ICC Supply current (per channel) No load, Vout = Vcc/2 92 110 µA -40 °C < T< 125 °C 125 AC performance GBP Gain bandwidth product RL = 10 kΩ, CL = 100 pF 480 kHz Fu Unity gain frequency RL = 10 kΩ, CL = 100 pF 430 Фm Phase margin RL = 10 kΩ, CL = 100 pF Degrees Gm Gain margin RL = 10 kΩ, CL = 100 pF dB SR+ Positive slew rate RL = 10 kΩ, CL = 100 pF, Vout = 0.5 V to VCC - 0.5 V 0.13 0.18 V/μs SR- Negative slew rate RL = 10 kΩ, CL = 100 pF, Vout = 0.5 V to VCC - 0.5 V 0.10 0.14 en Equivalent input noise voltage f = 1 kHz nV/√Hz f = 10 kHz THD+N Total harmonic distortion + noise fin = 1 kHz, Gain = 1, RL = 100 kΩ, Vicm = (Vcc - 1 V)/2, BW = 22 kHz, Vout = 1 Vpp 0.005

Symbol Parameter Conditions Min. Typ. Max. Unit trec Overload recovery time µs

Table 4: Electrical characteristics at Vcc+ = 12 V with Vcc- = 0 V, Vicm = Vcc/2, Tamb = 25 °C, and RL = 10 kΩ connected to Vcc/2 (unless otherwise specified) Symbol Parameter Conditions Min. Typ. Max. Unit DC performance Vio Input offset voltage mV 1.6 ΔVio/ΔT Input offset voltage drift -40 °C < T< 125 °C 1.6 6 μV/°C Iio Input offset current 1 5 nA -40 °C < T< 125 °C Iib Input bias current 5 10 -40 °C < T< 125 °C CMR Common mode rejection ratio: 20 log (ΔVicm/ΔVio) Vicm = 0 V to Vcc+ - 1 V, Vout = Vcc/2 95 126 dB -40 °C < T< 12 5°C 90 SVR Supply voltage rejection ratio: 20 log (ΔVcc/ΔVio) Vcc = 2.8 to 12 V 95 124 -40 °C < T< 125 °C 90 Avd Large signal voltage gain Vout = 0.5 V to (Vcc+ - 0.5 V) 105 115 -40 °C < T< 125 °C 100 VOH High level output voltage drop from Vcc+ 37 60 mV -40 °C < T< 125 °C VOL Low level output voltage 56 65 -40 °C < T< 125 °C Iout Isink Vout = Vcc 24 35 mA -40 °C < T< 125 °C 10 Isource Vout = 0 V 28 40 -40 °C < T< 125 °C 10 ICC Supply current (per channel) No load, Vout = Vcc/2 97 115 µA -40 °C < T< 125 °C 130 AC performance GBP Gain bandwidth product RL = 10 kΩ, CL = 100 pF 510 kHz Fu Unity gain frequency RL = 10 kΩ, CL = 100 pF 460 Фm Phase margin RL = 10 kΩ, CL = 100 pF Degrees Gm Gain margin RL = 10 kΩ, CL = 100 pF dB SR+ Positive slew rate RL = 10 kΩ, CL = 100 pF, Vout = 0.5 V to VCC - 0.5 V 0.13 0.19 V/μs SR- Negative slew rate RL = 10 kΩ, CL = 100 pF, Vout = 0.5 V to VCC - 0.5 V 0.11 0.15 en Equivalent input noise voltage f = 1 kHz nV/√Hz f = 10 kHz THD+N Total harmonic distortion + noise fin = 1 kHz, Gain = 1, RL = 100 kΩ, Vicm = (Vcc - 1 V)/2, BW = 22 kHz, Vout = 2 Vpp 0.004

Symbol Parameter Conditions Min. Typ. Max. Unit trec Overload recovery time µs

Table 5: Electrical characteristics at Vcc+ = 36 V with Vcc- = 0 V, Vicm = Vcc/2, Tamb = 25 °C, and RL = 10 kΩ connected to Vcc/2 (unless otherwise specified) Symbol Parameter Conditions Min. Typ. Max. Unit DC performance Vio Input offset voltage mV 1.6 ΔVio/ΔT Input offset voltage drift -40 °C < T< 125 °C 1.3 6 μV/°C Iio Input offset current 1 5 nA -40 °C < T< 125 °C Iib Input bias current 5 10 -40 °C < T< 125 °C CMR Common mode rejection ratio: 20 log (ΔVicm/ΔVio) Vicm = 0 V to Vcc+ - 1 V, Vout = Vcc/2 105 130 dB -40 °C < T< 125 °C 100 SVR Supply voltage rejection ratio 20 log (ΔVcc/ΔVio) Vcc = 12 to 36 V 100 124 -40 °C < T< 125 °C 95 Avd Large signal voltage gain Vout = 0.5 V to (Vcc+ - 0.5 V) 110 120 -40 °C < T< 125 °C 105 VOH High level output voltage drop from VCC+ 80 110 mV -40 °C < T< 125 °C 150 VOL Low level output voltage 90 110 -40 °C < T< 125 °C 150 Iout Isink Vout = Vcc 40 60 mA -40 °C < T< 125 °C 10 Isource Vout = 0 V 40 70 -40 °C < T< 125 °C 20 ICC Supply current (per channel) No load, Vout = Vcc/2 103 125 µA -40 °C < T< 125 °C 140 AC performance GBP Gain bandwidth product RL = 10 kΩ, CL = 100 pF 560 kHz Fu Unity gain frequency RL = 10 kΩ, CL = 100 pF 500 Фm Phase margin RL = 10 kΩ, CL = 100 pF Degrees Gm Gain margin RL = 10 kΩ, CL = 100 pF dB SR+ Positive slew rate RL = 10 kΩ, CL = 100 pF, Vout = 0.5 V to VCC - 0.5 V 0.15 0.20 V/μs SR- Negative slew rate RL = 10 kΩ, CL = 100 pF, Vout = 0.5 V to VCC - 0.5 V 0.12 0.16 en Equivalent input noise voltage f = 1 kHz nV/√Hz f = 10 kHz THD+N Total harmonic distortion + noise fin = 1 kHz, Gain = 1, RL = 100 kΩ, Vicm = (Vcc - 1 V)/2, BW = 22 kHz, Vout = 2 Vpp 0.004

Symbol Parameter Conditions Min. Typ. Max. Unit trec Overload recovery time RL = 10 kΩ, CL = 100 pF, Gain = 1 µs

3 Application information

3.1 Operating voltages

The TSB611 operational amplifier can operate f rom 2.7 V to 36 V. The parameters are fully specified at 2.7 V, 12 V, and 36 V power supplies. However, parameters are very stable in the full V cc range. Additionally, main specifications are guaranteed in the extended temperature range from -40 to 125 °C.

3.2 Input common-mode range

The TSB611 has an input common -mode range that includes ground. The input common - mode range is extended from (VCC-) - 0.1 V to (VCC+) - 1 V.

3.3 Rail-to-rail output

The operational amplifier's output levels can go close to the rails: 100 mV maximum below the positive rail and 110 mV maximum above the negative rail when connected to a 10 kΩ resistive load to VCC/2 for a power supply voltage of 36 V.

3.4 Input offset voltage drift over temperature

The maximum input voltage drift variation over temperature is defined as the of fset variation related to the offset value measured at 25 °C. The operational amplifier is one of the main circuits of the signal conditioning chain, and the amplifier input offset is a major contributor to the chain accuracy. The signal chain accuracy at 25 °C can be compensated during production at application level. The maximum input voltage drift over temperature enables the system designer to anticipate the effect of temperature variations. The maximum input voltage drift over temperature is computed using Equation 1. Equation 1 Where T = -40 °C and 125 °C. The datasheet maximum value is guaranteed by measurements on a representative sample size ensuring a Cpk (process capability index) greater than 2.

3.5 Long term input offset voltage drift

To evaluate product reliability, two types of stress acceleration are used: Voltage acceleration, by changing the applied voltage Temperature acceleration, by c hanging the die temperature (below the maximum junction temperature allowed by the technology) with the ambient temperature. The voltage acceleration has been defined based on JEDEC results, and is defined using Equation 2. ∆Vio ∆T max Vio T Vio 25 T 25 °C– = °C

Where: AFV is the voltage acceleration factor β is the voltage acceleration constant in 1/V, constant technology parameter (β = 1) VS is the stress voltage used for the accelerated test VU is the voltage used for the application The temperature acceleration is driven by the Arrhenius model, and is def ined in Equation 3. Equation 3 Where: AFT is the temperature acceleration factor Ea is the activation energy of the technology based on the failure rate k is the Boltzmann constant (8.6173 x 10-5 eV.K-1) TU is the temperature of the die when VU is used (K) TS is the temperature of the die under temperature stress (K) The final acceleration factor, A F, is the multiplication of the voltage acceleration factor and the temperature acceleration factor (Equation 4). Equation 4 AF is calculated using the temperature and voltage defined in the mission profile of the product. The AF value can then be used in Equation 5 to calculate the number of months of use equivalent to 1000 hours of reliable stress duration. Equation 5 To evaluate the op amp reliability, a follower stress condition is used where V CC is defined as a function of the maximum operating voltage and the absolute maximum rating (as recommended by JEDEC rules). The V io drift (in µV) of the product after 1000 h of stress is tracked with parameters at different measurement conditions (see Equation 6). Equation 6 AFV e β VS VU– AFT e Ea TU TS AF AFT AFV×= Months AF 1000 h× 12 months 24 h 365.25 days× ×= / VCC maxVop with Vicm VCC 2= =

The long term drift parameter (ΔVio), estimating the reliability performance of the product, is obtained using the ratio of the Vio (input offset voltage value) drift over the square root of the calculated number of months (Equation 7). Equation 7 Where V io drift is the measu red drift value in the specified test conditions after 1000 h stress duration.

3.6 ESD structure of TSB611

The TSB611 is protected against electrostatic discharge (ESD) with dedicated di odes (see Figure 35). These diodes must be considered at application level especially when signals applied on the input pins go beyond the power supply rails (V CC+ or VCC-). Current through the diodes must be limited to a m aximum of 10 mA as stated in Table 1. A serial resistor or a Schottky diode can be used on the inputs to improve protection but the 10 mA limit of input current must be strictly observed. Figure 35: ESD structure ∆Vio Viodrift month s TSB611

3.7 Initialization time

The TSB611 has a good power supply rejection ratio (PSRR), but as with all devices, it is recommended to use a 22 nF bypass capacitor as clo se as possible to the power supply pins. It prevents the noise present on the power supply impacting the signal conditioning. In addition, this bypass capacitor enhances the initialization time (see Figure 36 and Figure 37). Figure 36: Startup behavior without bypass capacitor Figure 37: Startup behavior with a 22 nF bypass capacitor

4 Package information

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.

4.1 SOT23-5 package information

Figure 38: SOT23-5 package outline Table 6: SOT23-5 mechanical data Ref. Dimensions Millimeters Inches 0.15 0.006 1.90 0.075 e 0.95 0.037 K 0 degrees 10 degrees 0 degrees 10 degrees

5 Ordering information

Table 7: Order codes Order code Temperature range Package Packing Marking TSB611ILT -40 °C to 125 °C SΟΤ23-5 Tape and reel K191 TSB611IYLT (1) K194 Notes: (1)Qualification and characterization according to AEC Q100 and Q003 or equivalent, advanced screening according to AEC Q001 & Q 002 or equivalent on going.

6 Revision history

Table 8: Document revision history Date Revision Changes 17-Aug-2015 1 Initial release