TSB1412 TSC | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 4
Technical content
TSB1412 Low Vcesat PNP Transistor 1/4 Version: A07 TO-252 (DPAK) PRODUCT SUMMARY BVCBO -40V BVCEO -30V IC -5A VCE(SAT) -0.5V @ IC / IB = -4A / -100mA Features ● Low VCE(SAT) -0.36 @ IC / IB = -4A / -100mA (Typ.) ● Complementary part with TSD2118 Structure ● Epitaxial Planar Type ● PNP Silicon Transistor Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Symbol Limit Unit Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -30 V Emitter-Base Voltage VEBO -6 V DC -5 Collector Current Pulse IC -10 (note) A Ta=25ºC 1 Collector Power Dissipation Tc=25ºC PD 10 W Operating Junction Temperature TJ +150 oC Operating Junction and Storage Temperature Range TSTG - 55 to +150 oC Note: Single pulse, Pw=10ms Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Collector-Base Breakdown Voltage IC = -50uA, IE = 0 BVCBO -40 -- -- V Collector-Emitter Breakdown Voltage IC = -1mA, IB = 0 BVCEO -30 -- -- V Emitter-Base Breakdown Voltage IE = -50uA, IC = 0 BVEBO -6 -- -- V Collector Cutoff Current VCB = -25V, IE = 0 ICBO -- -- -0.5 uA Emitter Cutoff Current VEB = -5V, IC = 0 IEBO -- -- -0.5 uA Collector-Emitter Saturation Voltage IC / IB = -4A / -100mA *VCE(SAT) -- -0.36 -0.5 V DC Current Transfer Ratio VCE = -2V, IC = -500mA *hFE 180 -- 390 Transition Frequency VCE =-6V, IC=-50mA, f=30MHz fT -- 120 -- MHz Output Capacitance VCB = -20V, f=1MHz Cob -- 60 -- pF * Pulse Test: Pulse Width ≤380uS, Duty Cycle≤2% Pin Definition: 1. Base 2. Collector 3. Emitter
TSB1412 Low Vcesat PNP Transistor 3/4 Version: A07 TO-252 Mechanical Drawing
TSB1412 Low Vcesat PNP Transistor 4/4 Version: A07