TSB1184_1 TSC | Alldatasheet
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TSB1184 Low Vcesat PNP Transistor 1/4 Version: A08 TO-252 (DPAK) PRODUCT SUMMARY BVCBO -40V BVCEO -30V IC -3A VCE(SAT) -0.3V @ IC / IB = -2A / -100mA Features ● Low VCE(SAT) -0.3V @ IC / IB = -2A / -100mA (Typ.) ● Excellent DC current gain characteristics Structure ● Epitaxial Planar Type ● PNP Silicon Transistor Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Symbol Limit Unit Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -30 V Emitter-Base Voltage VEBO -6 V DC -3 Collector Current Pulse IC -7 (note) A Ta=25ºC 1 Collector Power Dissipation Tc=25ºC PD 5 W Operating Junction Temperature TJ +150 oC Operating Junction and Storage Temperature Range TSTG - 55 to +150 oC Note: Single pulse, Pw=10ms Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Collector-Base Breakdown Voltage IC = -50uA, IE = 0 BVCBO -40 -- -- V Collector-Emitter Breakdown Voltage IC = -1mA, IB = 0 BVCEO -30 -- -- V Emitter-Base Breakdown Voltage IE = -50uA, IC = 0 BVEBO -6 -- -- V Collector Cutoff Current VCB = -40V, IE = 0 ICBO -- -- -1 uA Emitter Cutoff Current VEB = -4V, IC = 0 IEBO -- -- -1 uA Collector-Emitter Saturation Voltage IC / IB = -2A / -200mA *VCE(SAT) -- -0.3 -0.5 V DC Current Transfer Ratio VCE = -2V, IC = -100mA *hFE 120 -- 560 Transition Frequency VCE =-5V, IC=-100mA, f=30MHz fT -- 80 -- MHz Output Capacitance VCB = -10V, f=1MHz Cob -- 55 -- pF * Pulse Test: Pulse Width ≤380uS, Duty Cycle≤2% Pin Definition: 1. Base 2. Collector 3. Emitter
TSB1184 Low Vcesat PNP Transistor 3/4 Version: A08 TO-252 Mechanical Drawing
TSB1184 Low Vcesat PNP Transistor 4/4 Version: A08