TSP01H12 THINKISEMI | Alldatasheet

Document overview

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Technical content

Features

  • VDS=100V; ID=118A@ VGS=10V; RDS(ON)<7.5mΩ @ VGS=10V
  • Special Designed for E-Bike Controller Application
  • Ultra Low On-Resistance
  • High UIS and UIS 100% Test Application
  • 72V E-Bike controller applications
  • Hard Switched and High Frequency Circuits
  • Uninterruptible Power Supply

Table 1. Absolute Maximum Ratings (TA=25℃) © 2006 Thinki Semiconductor Co., Ltd.

  • Inverter Application
  • Amplifier Application

Table 2. Thermal Characteristic Table 3. Electrical Characteristics (TA=25℃unless otherwise noted) © 2006 Thinki Semiconductor Co., Ltd.

1) EAS Test Circuits 2) Gate Charge Test Circuit: 3) Switch Time Test Circuit： TSP01H12 © 2006 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com/ Page 3/5Rev.05

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS (Curves) Figure1. Output Characteristics Figure2. Transfer Characteristics VDS Drain-Source Voltage (V) VGS Gate-Source Voltage (V) ID-Drain Current (A) ID-Drain Current (A) R DS(ON) On- Resistance (m Ω Normalized On-Resistance Figure3. RDS(ON)- Drain Current Figure4. RDS(ON)- JunctionTemperature ID- Drain Current (A) TJ-Junction T emperature(℃) Figure5. Gate Charge Figure6. Source- Drain Diode Forward VGS Gate-Source Voltage (V) Is-Reverse Drain Current (A) Qg Gate Charge (nC) VDS Drain-Source Voltage (V) TSP01H12 © 2006 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com/ Page 4/5Rev.05

Figure9. BVDSS vs Junction Temperature Figure10. VGS(th) vs Junction Temperature TJ-Junction T emperature(℃) TJ-Junction T emperature(℃) Figure11. Normalized Maximum Transient Thermal Impedance Square Wave Pluse Duration(sec) C Capacitance (pF) ID-Drain Current (A) R(t), Normalized Effective Transient Thermal Impedance VDS Drain-Source Voltage (V) Figure7. Capacitance vs VDS Figure8. Safe Operation Area VDS Drain-Source Voltage (V) TSP01H12 © 2006 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com/ Page 5/5Rev.05