TSAL6100UL_V01 VISHAY | Alldatasheet

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Technical content

www.vishay.com Vishay Semiconductors Rev. 1.0, 16-Jun-16 1 Document Number: 84388 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW

DESCRIPTION

TSAL6100UL is an infrared, 940 nm emitting diode in GaAlAs multi quantum well (MQW) technology with high radiant power and high speed molded in a blue-gray plastic package. It is certified ac cording to UL217 standard for smoke alarms.

FEATURES

  • Package type: leaded
  • Package form: T-1¾
  • Dimensions (in mm): Ø 5
  • Peak wavelength: λ p = 940 nm
  • High reliability
  • High radiant power
  • High radiant intensity
  • Angle of half intensity: ϕ = ± 10°
  • UL217 recognized
  • Low forward voltage
  • Suitable for high pulse current operation
  • Good spectral matching with Si photodetectors
  • Material categorization: fo r definitions of compliance please see www.vishay.com/doc?99912

APPLICATIONS

  • IR source for smoke detectors Note
  • Test conditions see table “Basic Characteristics” Note
  • MOQ: minimum order quantity 94 8389 PRODUCT SUMMARY COMPONENT Ie (mW/sr) ϕ (deg) λp (nm) tr (ns) TSAL6100UL 170 ± 10 940 15

ORDERING INFORMATION

ORDERING CODE PACKAGING REMARKS PACKAGE FORM TSAL6100UL Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1¾ ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage VR 5V Forward current IF 100 mA Peak forward current t p/T = 0.5, tp = 100 μs I FM 200 mA Surge forward current t p = 100 μs I FSM 1.5 A Power dissipation PV 160 mW Junction temperature T j 100 °C Operating temperature range T amb -40 to +85 °C Storage temperature range T stg -40 to +100 °C Soldering temperature t ≤ 5 s, 2 mm from case T sd 260 °C Thermal resistance junction / ambient J-STD-051, leads 7 mm soldered on PCB R thJA 230 K/W

www.vishay.com Vishay Semiconductors Rev. 1.0, 16-Jun-16 2 Document Number: 84388 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) Fig. 3 - Pulse Forward Current vs. Pulse Duration Fig. 4 - Forward Current vs. Forward Voltage 100 120 140 160 180 0 1 02 03 04 05 06 07 08 09 01 0 0

21211 Tamb - Ambient Temperature (°C)

PV - Power Dissipation (mW) RthJA = 230 K/W 100 120 0 1 02 03 04 05 06 07 08 09 0 1 0 0 Tamb - Ambient Temperature (°C)21212 IF - Forward Current (mA) RthJA = 230 K/W BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Forward voltage IF = 100 mA, tp = 20 ms V F - 1.35 1.6 V IF = 1 A, tp = 100 μs V F -2 . 2- V Temperature coefficient of VF IF = 1 mA TK VF -- 1 . 8- m V / K Reverse current V R = 5 V I R - - 10 μA Junction capacitance V R = 0 V, f = 1 MHz, E = 0 C j -4 0-p F Radiant intensity IF = 100 mA, tp = 20 ms I e 80 170 400 mW/sr IF = 1 A, tp = 100 μs I e - 1450 - mW/sr Radiant power I F = 100 mA, tp = 20 ms φe -4 0- m W Temperature coefficient of φe IF = 20 mA TK φe - -0.6 - %/K Angle of half intensity ϕ -± 1 0- d e g Peak wavelength I F = 100 mA λp - 940 - nm Spectral bandwidth I F = 100 mA Δλ -3 0- n m Temperature coefficient of λp IF = 100 mA TK λp -0 . 2- n m / K Rise time I F = 100 mA t r -1 5-n s Fall time I F = 100 mA t f -1 5-n s tp - Pulse Duration (ms) 96 11987 10 0 101 10 1 10 -1 10-1 100 10210-2 I - Forward Current (A)F tp/T = 0.01 IFSM = 1 A (Single Pulse) 0.05 0.1 0.5 1.0 1 100 1000 01 23 tp = 100 µs tp/T= 0.001 VF - Forward Voltage (V)21534 IF - Forward Current (mA)

www.vishay.com Vishay Semiconductors Rev. 1.0, 16-Jun-16 3 Document Number: 84388 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Fig. 5 - Radiant Intensity vs. Forward Current Fig. 6 - Radiant Power vs. Forward Current Fig. 7 - Relative Radiant Intensity / Power vs. Ambient Temperature Fig. 8 - Relative Radiant Power vs. Wavelength Fig. 9 - Relative Radiant Intensity vs. Angular Displacement 0.1 100 1000 10000 1 10 100 1000 Ie - Radiant Intensity (mW/sr) IF - Forward Current (mA) tp = 100 μs 0.1 100 1000 1 10 100 1000 Phie - Radiant Power (mW) IF - Forward Current (mA) tp = 100 μs -10 10 50 0 100 0.4 0.8 1.2 1.6 Ie rel; 140 94 7993 IF = 20 mA Φe rel T amb - Ambient Temperature (°C) 100 840 880 920 960 1000 1040 λ - Wavelength (nm)21445 Φe rel - Relative Radiant Power (%) IF = 30 mA 0.4 0.2 0 Ie rel - Relative Radiant Intensity 15989 0.6 0.9 0.8 30° 10° 20° 40° 50° 60° 70° 80° 0.7 1.0 ϕ - Angular Displacement

www.vishay.com Vishay Semiconductors Rev. 1.0, 16-Jun-16 4 Document Number: 84388 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 PACKAGE DIMENSIONS in millimeters 35.2 ± 0.55 Ø 5 ± 0.15 Area not plane technical drawings according to DIN specifications 6.544-5259.08-4 Issue: 3; 19.05.09 14436 < 0.7 2.54 nom. 8.7 ± 0.3 A C 1 min. (4.4) 0.5 + 0.15 - 0.05 Ø 5.8 ± 0.15 7.7 ± 0.15 0.6 + 0.2 - 0.1 R2.49 (sphere) 0.5 + 0.15 - 0.05

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