TSAL5300_08 VISHAY | Alldatasheet

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Technical content

High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs www.vishay.com For technical questions, contact: emittertechsupport@vishay.com Document Number: 81008 94 Rev. 1.9, 04-Sep-08 TSAL5300 Vishay Semiconductors

DESCRIPTION

TSAL5300 is an infrared, 940 nm emitting diode in GaAlAs/GaAs technology with high radiant power molded in a blue-gray plastic package.

FEATURES

  • Package type: leaded  Package form: T-1¾  Dimensions (in mm): ∅ 5  Leads with stand-off  Peak wavelength: λ p = 940 nm  High reliability  High radiant power  High radiant intensity  Angle of half intensity: ϕ = ± 22°  Low forward voltage  Suitable for high pulse current operation  Good spectral matching with Si photodetectors  Lead (Pb)-free component in accordance with RoHS 2002/95/EC and WEEE 2002/96/EC

APPLICATIONS

 Infrared remote control units with high power requirements  Free air transmission systems  Infrared source for optical counters and card readers Note Test conditions see table “Basic Characteristics“ Note MOQ: minimum order quantity Note Tamb = 25 °C, unless otherwise specified 96 11505 PRODUCT SUMMARY COMPONENT Ie (mW/sr) ϕ (deg) λP (nm) tr (ns) TSAL5300 45 ± 22 940 800

ORDERING INFORMATION

TSAL5300 Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1¾ TSAL5300-MSZ Tape and ammopack MOQ: 5000 pcs, 1000 pcs/ammopack T-1¾ ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V R 5V Forward current I F 100 mA Peak forward current t p/T = 0.5, tp = 100 µs I FM 200 mA Surge forward current t p = 100 µs I FSM 1.5 A Power dissipation P V 160 mW Junction temperature T j 100 °C Operating temperature range T amb - 40 to + 85 °C Storage temperature range T stg - 40 to + 100 °C Soldering temperature t ≤ 5 s, 2 mm from case T sd 260 °C Thermal resistance junction/ambient J-STD-051, leads 7 mm soldered on PCB RthJA 230 K/W

Document Number: 81008 For technical questi ons, contact: emittertechsupport@vishay.com www.vishay.com Rev. 1.9, 04-Sep-08 95 TSAL5300 High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs Vishay Semiconductors Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Cu rrent Limit vs. Ambient Temperature Note Tamb = 25 °C, unless otherwise specified 100 120 140 160 180 01 0 2 0 3 0 4 0 5 0 6 0 7 0 80 90 100

21211 Tamb - Ambient Temperature (°C)

PV - Power Dissipation (mW) RthJA = 230 K/W 100 120 0 1 02 03 04 05 06 07 0 80 90 100 Tamb - Ambient Temperature (°C)21212 IF - Forward Current (mA) RthJA = 230 K/W BASIC CHARACTERISTICS PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Forward voltage IF = 100 mA, tp = 20 ms V F 1.35 1.6 V IF = 1 A, tp = 100 µs V F 2.6 3 V Temperature coefficient of VF IF = 1 mA TK VF - 1.8 mV/K Reverse current V R = 5 V I R 10 µA Junction capacitance V R = 0 V, f = 1 MHz, E = 0 C j 25 pF Radiant intensity IF = 100 mA, tp = 20 ms I e 30 45 150 mW/sr IF = 1 A, tp = 100 µs I e 260 350 mW/sr Radiant power I F = 100 mA, tp = 20 ms φe 35 mW Temperature coefficient of φe IF = 20 mA TK φe - 0.6 %/K Angle of half intensity ϕ ± 22 deg Peak wavelength I F = 100 mA λp 940 nm Spectral bandwidth I F = 100 mA Δλ 50 nm Temperature coefficient of λp IF = 100 mA TK λp 0.2 nm/K Rise time IF = 100 mA t r 800 ns IF = 1 A t r 500 ns Fall time IF = 100 mA t f 800 ns IF = 1 A t f 500 ns Virtual source diameter Meth od: 63 % encircled energy d 2.3 mm

www.vishay.com For technical questions, contact: emittertechsupport@vishay.com Document Number: 81008 96 Rev. 1.9, 04-Sep-08 TSAL5300 Vishay Semiconductors High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs BASIC CHARACTERISTICS Tamb = 25 °C, unless otherwise specified Fig. 3 - Pulse Forward Current vs. Pulse Duration Fig. 4 - Forward Current vs. Forward Voltage Fig. 5 - Radiant Intensity vs. Forward Current Fig. 6 - Radiant Power vs. Forward Current Fig. 7 - Relative Radiant Intensity/Power vs. Ambient Temperature Fig. 8 - Relative Radiant Power vs. Wavelength tp - Pulse Duration (ms) 96 11987 10 0 101 10 1 10 -1 10-1 100 10210-2 I - For ward Current (A)F tp/T = 0.01 IFSM = 1 A (Single Pulse) 0.05 0.1 0.5 1.0 VF - Forward Voltage (V)13600 101 100 102 103 104 tP = 100 µs tP/T = 0.001 IF - Forward Current (mA) 4321 14327 103101 102 104100 0.1 1000 100 IF - Forward Current (mA) I - Radiant Intensity (m W/sr)e - Radiant Power (mW)e IF - Forward Current (mA)13602 10 310 1 10 2 10 410 0 0.1 1000 100 Φ - 10 10 50 0 100 0.4 0.8 1.2 1.6 Ie rel; 140 94 7993 IF = 20 mA Φe rel T amb - Ambient Temperature (°C) 890 0.25 0.5 0.75 1.0 1.25 - Wavelength (nm)14291 - Relative Radiant Powere relΦ IF = 100 mA λ 990940

Document Number: 81008 For technical questi ons, contact: emittertechsupport@vishay.com www.vishay.com Rev. 1.9, 04-Sep-08 97 TSAL5300 High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs Vishay Semiconductors Fig. 9 - Relative Radiant Intensity vs. Angular Displacement PACKAGE DIMENSIONS in millimeters 94 8883 0.6 0.9 0.8 30° 10° 20° 40° 50° 60° 70° 80° 0.7 1.0 00.20.4 Ie rel - Relative Radiant Intensity ϕ - Angular Displacement 34.4 ± 0.55 < 0.7 1.2 + 0.2 - 0.1 0.5 + 0.15 - 0.05 Ø 5 ± 0.15 2.54 nom. 0.5 + 0.15 - 0.05 5.8 ± 0.15 8.7 ± 0.3 7.7 ± 0.15 1.5 ± 0.25 Area not plane technical drawings according to DIN specifications 6.544-5258.05-4 A C (3.6) 11.4 ± 0.3 R 2.49 (sphere) Issue: 7; 08.11.99 96 12122

www.vishay.com For technical questions, contact: emittertechsupport@vishay.com Document Number: 81008 98 Rev. 1.9, 04-Sep-08 TSAL5300 Vishay Semiconductors High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs Fig. 10 - ∅ 5 mm Devices on Tape AMMOPACK The tape is folded in a concertina arrangement and laid in cardboard box. If components are required with cathode before the anode (figure 12), then start of tape should be taken from the side of the box marked “-”. If components are required with anode before cathode, then tape should be taken from the side of the box marked “+”. Fig. 11 - Tape Direction TAPE DIMENSIONS TSAL5300 OPTION H ± 0.5 mm QUANTITY/BOX CS21Z 22 1000 FSZ 27 1000 GSZ 29 1000 MSZ 25.5 1000 0.3 ± 0.2 2.54 + 0.6 - 0.1 12.7 ± 0.2 5.08 ± 0.7 18 + 1 - 0.5 9 ± 0.5 Measure limit over 20 index-holes: ± 1 12 ± 0.3 0.9 max. 6.35 ± 0.7 Ø 4 ± 0.2 12.7 ± 1 ± 1 “H” ± 2 19314 Tape feed direction code 12 Diodes: cathode before anode Transistors: collector before emitter Label T ape feed direction code 21 C B A 94 8667 Diodes: anode before cathode Transistors: emitter before collecto r

Document Number: 91000 www.vishay.com Revision: 18-Jul-08 1 Disclaimer Legal Disclaimer Notice Vishay All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all li ability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permit ted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.