TS61089 BWTECH | Alldatasheet
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Technical content
Features
z Dual line programmable transient voltage suppressor z Wide negative firing voltage range: VMGL = -75V (S61089) VMGL = -100V (S61089A VMGL = -155V (S61089B) z Low dynamic switching voltages: VFP and VDGL z Low gate triggering current: IGT = 5 mA max z Peak pulse current: IPP = 30 A (10/1000 s) z Holding current: IH > 150 mA General Description This device has been especially designed to protect 2 new high voltage, as well as classical SLICs, against transient overvoltages. Positive overvoltages are clamped by 2 diodes. Negative surges are suppresse d by 2 thyristors, their breakdown voltage being referenced to –VBAT through the gate. This component presents a very low gate triggering current (IGT) in order to redu ce the current consumption on printed circuit board during the firing phase. Benefits This devices are not subject to ageing and provide a fail safe mode in short circuit for a better protection. Trisils are used to help equipment to meet various standards such as UL1950, IEC950 / CSA C22.2, UL1459 and FCC part68. Marking TYPE MARKING TS61089 SE69 TS61089A SE69A TS61089B SE69B S O P - 8
Figure 1. Voltage-Current Charateristic
V(BO) Breakover voltage VF Forward voltage VFRM Peak forward recovery voltage VGK(BO) Gate-cathode impluse breakover voltage IGKS Gate reverse current IGT Gate trigger current VGT Gate-cathode trigger voltage CKA Cathode-anode off-state capacitance Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified. Parameter Test Conditions Min Ty p Max Unit -5 uA ID Off-state current VD=VDRM, VGK=0 TJ=25 ℃ TJ=85 ℃ -50 uA V(BO) Breakover voltage 2/10us,IPP=-56A,RS=45Ω,VGG=-48V,CG=220nF 2/10us,IPP=-100A,RS=50Ω,VGG=-48V,CG=220nF 1.2/50us,IPP=-53A,RS=47Ω,VGG=-48V,CG=220nF 1.2/50us,IPP=-96A,RS=52Ω,VGG=-48V,CG=220nF -57 -60 -60 -64 V VGK(BO) Gate-cathode impulse Breakover voltage 2/10us,IPP=-56A,RS=45Ω,VGG=-48V,CG=220nF 2/10us,IPP=-100A,RS=50Ω,VGG=-48V,CG=220nF 1.2/50us,IPP=-53A,RS=47Ω,VGG=-48V,CG=220nF 1.2/50us,IPP=-96A,RS=52Ω,VGG=-48V,CG=220nF V VF Forward voltage IF = 5 A, TW = 200 us 3 V VFRM Peak forward recovery voltage 2/10us,IPP=-56A,RS=45Ω,VGG=-48V,CG=220nF 2/10us,IPP=-100A,RS=50Ω,VGG=-48V,CG=220nF 1.2/50us,IPP=-53A,RS=47Ω,VGG=-48V,CG=220nF 1.2/50us,IPP=-96A,RS=52Ω,VGG=-48V,CG=220nF V IH Holding current IT = -1 A, di/dt = 1A/ms, VGG =-48 V -150 mA -5 uA IGKS Gate reverse current VGG = VGK = VGKRM, VKA = 0 TJ=25 ℃ TJ=85 ℃ -50 uA IGT Gate trigger current IT = -3 A, tp(g) ≥ 20 us, VGG = -48V 5 mA VGT Gate-cathode trigger voltage I T = -3 A, tp(g) ≥ 20 us, VGG = -48V 2.5 V QGS Gate switching charge 1.2/50us,IPP=-53A,RS=47Ω,VGG=-48V, CG=220nF 0.1 uC VD= -3 V 100 pF CKA Cathode-anode off- State capacitance F=1 MHz, V d=1V, IG=0 VD=-48 V 50 pF
Peak Non-Recurring AC vs. Current Duration Fig2. Non-repetitive Peak On-State Current against Duration
A 1.75 A1 0.10 0.25 A2 1.35 1.55 1.75 B 0.35 0.42 0.49 C 0.19 0.25 D 4.80 4.90 5.00 E 5.80 6.00 6.20 E1 3.80 3.95 4.00 e 1.27 L 0.40 0.90 oK 0 8 o